公开(公告)号：US6004849A

公开(公告)日：1999-12-21

申请号：US911745

申请日：1997-08-15

申请人： Mark I. Gardner ,  Daniel Kadosh ,  Michael Duane

发明人： Mark I. Gardner ,  Daniel Kadosh ,  Michael Duane

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/78 ,  H01L21/265

CPC分类号： H01L29/66659 ,  H01L21/28114 ,  H01L29/665 ,  H01L29/7835

摘要： A method of making an asymmetrical IGFET is disclosed. The method includes providing a semiconductor substrate with an active region, wherein the active region includes a source region and a drain region, forming a gate insulator on the active region, forming a gate on the gate insulator and over the active region, implanting arsenic into the active region to provide a greater concentration of arsenic in the source region than in the drain region, growing an oxide layer over the active region, wherein the oxide layer has a greater thickness over the source region than over the drain region due to the greater concentration of arsenic in the source region than in the drain region, forming a source in the source region and a drain in the drain region, depositing a refractory metal over the gate, the source, the drain, and the oxide layer, and reacting the refractory metal with the drain without reacting the refractory metal with the source, thereby forming a silicide contact on the drain without forming a silicide contact on the source. Advantageously, the IGFET has low source-drain resistance, shallow channel junctions, and an LDD that reduces hot carrier effects.

摘要翻译： 公开了制造不对称IGFET的方法。 该方法包括提供具有有源区的半导体衬底，其中有源区包括源极区和漏极区，在有源区上形成栅极绝缘体，在栅极绝缘体上并在有源区上方形成栅极，将砷注入 所述有源区域在所述源极区域中提供比在所述源极区域中更大的砷浓度，在所述有源区域上生长氧化物层，其中所述氧化物层在所述源极区域上比在所述漏极区域上的厚度大于所述漏极区域上的厚度 在源极区域中的砷浓度比漏极区域中的砷浓度高，在源极区域形成源极，在漏极区域形成漏极，在栅极，源极，漏极和氧化物层上沉积难熔金属，并使 具有漏极的难熔金属，而不使难熔金属与源极反应，从而在漏极上形成硅化物接触，而不在源上形成硅化物接触。 有利地，IGFET具有低源极 - 漏极电阻，浅沟道结和降低热载流子效应的LDD。

公开(公告)号：US5882959A

公开(公告)日：1999-03-16

申请号：US729810

申请日：1996-10-08

申请人： Daniel Kadosh ,  Mark I. Gardner

发明人： Daniel Kadosh ,  Mark I. Gardner

IPC分类号： H01L21/822 ,  H01L27/06 ,  H01L21/00

CPC分类号： H01L21/8221 ,  H01L27/0688 ,  Y10S257/905

摘要： A process is provided for producing active and passive devices on various levels of a semiconductor topography. As such, the present process can achieve device formation in three dimensions to enhance the overall density at which an integrated circuit is formed. The multi-level fabrication process not only adds to the overall circuit density but does so with emphasis placed on interconnection between devices on separate levels. Thus, high performance interconnect is introduced whereby the interconnect is made as short as possible between features within one transistor level to features within another transistor level. The interconnect achieves lower resistivity and capacitance by forming a single gate conductor which is shared by an upper level transistor and a lower level transistor. The shared gate conductor is interposed between a pair of gate dielectrics and each gate dielectric is configured between the single gate conductor and a respective substrate. Thus, the upper level transistor is inverted relative to the lower level transistor. The upper level transistor includes a substrate and junction region formed within and opening of an interlevel dielectric. The opening serves to receive the substrate material, but also to demarcate the formation of a pre-existing gate dielectric prior to substrate deposition. Sharing a single gate conductor among two transistors not only minimizes the overall routing between transistor inputs, but also is particularly attuned to inverter formation.

公开(公告)号：US5854115A

公开(公告)日：1998-12-29

申请号：US979042

申请日：1997-11-26

申请人： Mark I. Gardner ,  Daniel Kadosh ,  Michael P. Duane

发明人： Mark I. Gardner ,  Daniel Kadosh ,  Michael P. Duane

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/51

CPC分类号： H01L29/518 ,  H01L21/28052 ,  H01L21/28176 ,  H01L21/823456 ,  H01L21/823828 ,  H01L21/82385 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66598 ,  Y10S438/97

摘要： A process is provided for forming a transistor gate conductor having an etch stop arranged at a depth below its upper surface such that the lateral width of the gate conductor above the etch stop may be exclusively narrowed to provide for reduction of transistor channel length. A masking layer, i.e., photoresist, patterned above the gate conductor is isotropically etched so as to minimize its lateral width prior to etching the gate conductor. Portions of the gate conductor not protected by the photoresist may be etched from above the etch stop to define a new pair of opposed sidewall surfaces for the upper portion of the gate conductor. The lateral width of the upper portion of the gate conductor thus may be reduced to a smaller dimension than that of conventional gate conductors. The gate conductor is subjected to an anisotropic etch in which portions of the gate conductor not protected by the narrowed photoresist are etched down to the etch stop. The presence of the etch stop ensures that substantial portions of the etch stop and underlying portions of the gate conductor are not removed before etching is completely terminated. As a result, a lower portion of the multi-layered gate conductor is wider than an upper portion of the gate conductor.

摘要翻译： 提供了一种用于形成晶体管栅极导体的工艺，该晶体管栅极导体具有布置在其上表面下方的深度处的蚀刻停止，使得蚀刻停止点之上的栅极导体的横向宽度可以专门变窄以提供晶体管沟道长度的减小。 在栅极导体上形成图案的掩模层，即光致抗蚀剂被各向同性蚀刻，以便在蚀刻栅极导体之前将其横向宽度最小化。 未被光致抗蚀剂保护的栅极导体的部分可以从蚀刻停止点的上方蚀刻，以限定用于栅极导体的上部的新的一对相对的侧壁表面。 因此，栅极导体的上部的横向宽度可以减小到比常规栅极导体更小的尺寸。 对栅极导体进行各向异性蚀刻，其中不被变窄的光致抗蚀剂保护的栅极导体的部分被蚀刻到蚀刻停止点。 蚀刻停止的存在确保蚀刻停止的大部分和栅极导体的下面的部分在蚀刻完全终止之前不被去除。 结果，多层栅极导体的下部比栅极导体的上部宽。

公开(公告)号：US5851883A

公开(公告)日：1998-12-22

申请号：US844975

申请日：1997-04-23

申请人： Mark I. Gardner ,  Daniel Kadosh ,  Fred N. Hause

发明人： Mark I. Gardner ,  Daniel Kadosh ,  Fred N. Hause

IPC分类号： H01L21/8234

CPC分类号： H01L21/823437 ,  Y10S438/947

摘要： A semiconductor process in which a dielectric layer is formed on an upper surface of a semiconductor substrate which includes a silicon base layer. Thereafter, an upper silicon layer is formed on an upper surface of the dielectric layer. The dielectric layer and the upper silicon layer are then patterned to form first and second silicon-dielectric stacks on the upper surface of the base silicon layer. The first and second silicon-dielectric stacks are laterally displaced on either side of a channel region of the silicon substrate and each include a proximal sidewall and a distal sidewall. The proximal sidewalls are approximately coincident with respective boundaries of the channel region. Thereafter, proximal and distal spacer structures are formed on the proximal and distal sidewalls respectively of the first and second silicon-dielectric stacks. A gate dielectric layer is then formed on exposed portions of the silicon base layer over a channel region of the base silicon layer. Portions of the first and second silicon-dielectric stacks located over respective source/drain regions of the base silicon layer are then selectively removed. Silicon is then deposited to fill first and second voids created by the selected removal of the stacks. The silicon deposition also fills a silicon gate region above the gate dielectric over the channel region. Thereafter, an impurity distribution is introduced into the deposited silicon. The deposited silicon is then planarized to physically isolate the silicon within the gate region from the silicon within the first and second voids resulting in the formation of a transistor including a silicon gate structure and first and second source/drain structures.

摘要翻译： 在包括硅基层的半导体衬底的上表面上形成介电层的半导体工艺。 此后，在电介质层的上表面上形成上硅层。 然后对电介质层和上硅层进行构图以在基底硅层的上表面上形成第一和第二硅 - 电介质叠层。 第一和第二硅 - 电介质堆叠在硅衬底的沟道区域的任一侧上横向移位，并且每个包括近侧壁和远侧壁。 近侧侧壁与通道区域的各个边界大致重合。 此后，分别在第一和第二硅 - 电介质堆叠的近侧和远侧壁上形成近端和远端间隔结构。 然后在硅基层的暴露部分上在基底硅层的沟道区上形成栅极电介质层。 然后选择性地去除位于基底硅层的相应源极/漏极区域之上的第一和第二硅 - 电介质叠层的部分。 然后沉积硅以填充由所选择的堆叠移除产生的第一和第二空隙。 硅沉积还在沟道区域上填充栅极电介质上方的硅栅极区域。 此后，将杂质分布引入沉积的硅中。 沉积的硅然后被平坦化以物理地隔离第一和第二空隙内的栅极区域内的硅，从而形成包括硅栅极结构和第一和第二源极/漏极结构的晶体管。

公开(公告)号：US5834350A

公开(公告)日：1998-11-10

申请号：US873116

申请日：1997-06-11

申请人： Mark I. Gardner ,  Daniel Kadosh ,  Michael Duane

发明人： Mark I. Gardner ,  Daniel Kadosh ,  Michael Duane

IPC分类号： H01L21/822 ,  H01L27/06 ,  H01L21/336

CPC分类号： H01L27/0688 ,  H01L21/8221

摘要： A second transistor is formed a spaced distance above a first transistor. An interlevel dielectric is first deposited upon the upper surface of the first semiconductor substrate and the first transistor. A second semiconductor substrate, preferably comprising polysilicon, is then formed into the interlevel dielectric. A second transistor is then formed on the upper surface of the second semiconductor substrate. The second transistor is a spaced distance above the first transistor. The two transistors are a lateral distance apart which is smaller than the distance that can be achieved by conventional fabrication of transistors on the upper surface of the wafer. Transistors are more closely packed which results in an increase in the number of devices produced per wafer.

公开(公告)号：US5677224A

公开(公告)日：1997-10-14

申请号：US711381

申请日：1996-09-03

申请人： Daniel Kadosh ,  Mark I. Gardner

发明人： Daniel Kadosh ,  Mark I. Gardner

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L21/70

CPC分类号： H01L21/823814 ,  H01L27/0922

摘要： An asymmetrical N-channel IGFET and an asymmetrical P-channel IGFET are disclosed. One or both IGFETs include a lightly doped drain region, heavily doped source and drain regions, and an ultra-heavily doped source region. Preferably, the heavily doped source region and lightly doped drain region provide channel junctions. Forming a first asymmetrical IGFET includes forming a gate with first and second opposing sidewalls over a first active region, applying a first ion implantation to implant lightly doped source and drain regions into the first active region, applying a second ion implantation to convert substantially all of the lightly doped source region into a heavily doped source region without doping the lightly doped drain region, forming first and second spacers adjacent to the first and second sidewalls, respectively, and applying a third ion implantation to convert a portion of the heavily doped source region outside the first spacer into an ultra-heavily doped source region without doping a portion of the heavily doped source region beneath the first spacer, and to convert a portion of the lightly doped drain region outside the second spacer into a heavily doped drain region without doping a portion of the lightly doped drain region beneath the second spacer. A second asymmetrical IGFET is formed in a related manner. Advantageously, one or both IGFETs have low source-drain series resistance and reduce hot carrier effects.

摘要翻译： 公开了非对称N沟道IGFET和非对称P沟道IGFET。 一个或两个IGFET包括轻掺杂漏极区，重掺杂源极和漏极区以及超重掺杂源极区。 优选地，重掺杂源极区域和轻掺杂漏极区域提供沟道结。 形成第一不对称IGFET包括在第一有源区上形成具有第一和第二相对侧壁的栅极，施加第一离子注入以将轻掺杂源极和漏极区域注入到第一有源区中，施加第二离子注入以将 所述轻掺杂源区分别成为重掺杂源区，而不掺杂所述轻掺杂漏区，分别与所述第一和第二侧壁相邻形成第一和第二间隔区，并施加第三离子注入以转换所述重掺杂源区的一部分 在第一间隔物之外的第一间隔物外部，而不掺杂第一间隔物下面的重掺杂源区的一部分，并将第二间隔区外部的轻掺杂漏极区的一部分转换成重掺杂漏极区，而不掺杂 第二间隔物下面的轻掺杂漏极区的一部分。 以相关的方式形成第二不对称IGFET。 有利地，一个或两个IGFET具有低的源 - 漏串联电阻并且减少热载流子效应。

公开(公告)号：US5654215A

公开(公告)日：1997-08-05

申请号：US713388

申请日：1996-09-13

申请人： Mark I. Gardner ,  Daniel Kadosh ,  Robert Dawson

发明人： Mark I. Gardner ,  Daniel Kadosh ,  Robert Dawson

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L29/78

CPC分类号： H01L29/66659 ,  H01L21/823468 ,  H01L29/7835 ,  Y10S438/911

摘要： In the present invention, a method for fabrication of a non-symmetrical LDD-IGFET is described. In one embodiment, a gate insulator and a gate electrode, such as a polysilicon, are formed over a semiconductor substrate, the gate electrode having a top surface and opposing first and second sidewalls. A first dopant is implanted into the semiconductor substrate to provide a lightly doped drain region substantially aligned with the second sidewall. First and second symmetrical spacers are then formed adjacent the first and second sidewalls, respectively. A second dopant is implanted into the semiconductor substrate after forming the symmetrical spacers to provide a moderately-lightly doped drain region substantially aligned with the outer region of the second symmetrical spacer. After implanting the second dopant, first and second non-symmetrical spacers are formed adjacent the first and second sidewalls, respectively. A heavy dose of a third dopant is then implanted into the semiconductor substrate to provide a heavily doped source region and a heavily doped drain region. In another embodiment, a fourth dopant is implanted into the semiconductor substrate before forming the first and second symmetrical spacers further doping the lightly doped drain region.

摘要翻译： 在本发明中，描述了用于制造非对称LDD-IGFET的方法。 在一个实施例中，栅极绝缘体和诸如多晶硅的栅电极形成在半导体衬底之上，栅电极具有顶表面和相对的第一和第二侧壁。 将第一掺杂剂注入到半导体衬底中以提供基本上与第二侧壁对齐的轻掺杂漏极区。 然后分别在第一和第二侧壁附近形成第一和第二对称间隔物。 在形成对称间隔物之后，将第二掺杂剂注入到半导体衬底中，以提供基本上与第二对称间隔物的外部区域对准的适度轻掺杂的漏区。 在注入第二掺杂剂之后，分别在第一和第二侧壁附近形成第一和第二非对称间隔物。 然后将大量的第三掺杂剂注入到半导体衬底中以提供重掺杂的源极区域和重掺杂的漏极区域。 在另一个实施例中，在形成第一和第二对称间隔物之前将第四掺杂剂注入到半导体衬底中，进一步掺杂轻掺杂漏极区。

公开(公告)号：US06358828B1

公开(公告)日：2002-03-19

申请号：US09118514

申请日：1998-07-17

申请人： Daniel Kadosh ,  Mark I. Gardner

发明人： Daniel Kadosh ,  Mark I. Gardner

IPC分类号： H01L213205

CPC分类号： H01L27/0688

摘要： A three-dimensional integrated circuit and fabrication process is provided for producing active and passive devices on various levels of the integrated circuit. The present process is particularly suited to interconnecting a source of one transistor to a drain of another to form series-connected transistors often employed in core logic units. A junction of an underlying transistor can be connected to a junction of an overlying transistor, with both transistors separated by an interlevel dielectric. The lower transistor junction is connected to the upper level transistor junction using a plug conductor. The plug conductor and, more specifically, the mutually connected junction, is further coupled to a laterally extended interconnect. The interconnect extends from the mutual connection point of the plug conductor to a substrate of the overlying transistor. Accordingly, the source and substrate of the overlying transistor can be connected to a drain of the underlying transistor to not only achieve series-connection but also to connect the source and substrate of an internally configured transistor for the purpose of reducing body effects.

摘要翻译： 提供三维集成电路和制造工艺，用于在集成电路的各种级别上产生有源和无源器件。 本方法特别适用于将一个晶体管的源极互连到另一个晶体管的漏极，以形成通常用于核心逻辑单元的串联连接的晶体管。 底层晶体管的结可以连接到上覆晶体管的结，两个晶体管由层间电介质分隔开。 下部晶体管结使用插头导体连接到上层晶体管结。 插头导体，更确切地说，相互连接的连接部分进一步耦合到横向延伸的互连。 互连从插头导体的相互连接点延伸到上覆晶体管的衬底。 因此，覆盖晶体管的源极和衬底可以连接到下面的晶体管的漏极，以便不仅实现串联连接，而且连接内部构造的晶体管的源极和衬底以减少体效应。

公开(公告)号：US06300661B1

公开(公告)日：2001-10-09

申请号：US09060509

申请日：1998-04-14

申请人： Daniel Kadosh ,  Mark I. Gardner ,  Michael P. Duane

发明人： Daniel Kadosh ,  Mark I. Gardner ,  Michael P. Duane

IPC分类号： H01L2976

CPC分类号： H01L21/823425 ,  H01L21/823493 ,  H01L27/088 ,  Y10S257/928

摘要： An integrated circuit fabrication process is provided for forming, a mutual implant region within a well which is shared by a source region of a transistor residing within the well and a well-tie region coupled to the well, thereby providing a single electrical link to the well and the source region. Contacts may be coupled to the mutual implant region, and a conductor may be connected to the contacts. In the instance that the well is a p-type well in which NMOS transistors are formed, a ground voltage may be applied to the conductor to bias both the source region and the well. On the other hand, if the well is an n-type well in which PMOS transistors are formed, a power voltage, VCC, may be applied to the conductor to bias both the source region and the well. Absent the need to form contacts to both the source region and the well-tie region and conductors to such contacts, less space is required to bias the well and the source region. Also, merging a portion of the well-tie region with a portion of the source region affords increased packing density of an integrated circuit. The higher packing density is achieved without resorting to decreasing the dimensions of the well-tie region, and thus without detrimentally increasing the resistance of the well-tie region.

摘要翻译： 提供了一种集成电路制造工艺，用于在阱内形成由位于阱内的晶体管的源极区域和耦合到阱的阱区域共享的阱内的相互注入区域，从而提供到该阱的单个电连接 井和源区。 触点可以耦合到相互植入区域，并且导体可以连接到触点。 在阱是其中形成NMOS晶体管的p型阱的情况下，可以将接地电压施加到导体以偏置源极区域和阱。 另一方面，如果阱是其中形成有PMOS晶体管的n型阱，则可以将电源电压VCC施加到导体以偏置源极区域和阱。 不需要形成与源极区域和连接区域的接触以及与这些触点的导体的接触，所以需要较少的空间来偏置阱和源极区域。 而且，将一部分连接区域与源区域的一部分合并，可以提高集成电路的堆积密度。 填充密度更高，而不需要减小连接区域的尺寸，从而不会不利地增加连接区域的阻力。

公开(公告)号：US6096591A

公开(公告)日：2000-08-01

申请号：US911746

申请日：1997-08-15

申请人： Mark I. Gardner ,  Daniel Kadosh ,  Derick J. Wristers

发明人： Mark I. Gardner ,  Daniel Kadosh ,  Derick J. Wristers

IPC分类号： H01L21/02 ,  H01L27/06 ,  H01L21/8234

CPC分类号： H01L28/20 ,  H01L27/0629

摘要： A method of making an IGFET and a protected resistor includes providing a semiconductor substrate with an active region and a resistor region, forming a gate over the active region, forming a diffused resistor in the resistor region, forming an insulating layer over the gate and the diffused resistor, forming a masking layer over the insulating layer that covers the resistor region and includes an opening above the active region, applying an etch using the masking layer as an etch mask so that unetched portions of the insulating layer over the active region form spacers in close proximity to opposing sidewalls of the gate and an unetched portion of the insulating layer over the resistor region forms a resistor-protect insulator, and forming a source and a drain in the active region. In this manner, a single insulating layer provides both sidewall spacers for the gate and a resistor-protect insulator for the diffused resistor.

摘要翻译： 制造IGFET和受保护电阻器的方法包括向半导体衬底提供有源区和电阻区，在有源区上形成栅极，在电阻区中形成扩散电阻，在栅极上形成绝缘层， 扩散电阻器，在覆盖电阻器区域的绝缘层上形成掩模层，并且在有源区域上方包括开口，使用掩模层施加蚀刻作为蚀刻掩模，使得在有源区域上的绝缘层的未蚀刻部分形成间隔物 靠近栅极的相对侧壁并且在电阻器区域上的绝缘层的未蚀刻部分形成电阻器保护绝缘体，并且在有源区域中形成源极和漏极。 以这种方式，单个绝缘层提供用于栅极的两个侧壁间隔件和用于扩散电阻器的电阻保护绝缘体。