Electronic Device and Package Used for the Same
    21.
    发明申请
    Electronic Device and Package Used for the Same 审中-公开
    用于其的电子设备和包装

    公开(公告)号:US20080048315A1

    公开(公告)日:2008-02-28

    申请号:US11664108

    申请日:2005-09-08

    IPC分类号: H03H9/05 H01L23/15

    摘要: [PROBLEM ] To provide a laminate ceramic electronic device applicable to two types of design specifications by using a common package. [SOLUTION A laminate ceramic electronic device of the present invention has filter chips 2, 3 for transmission and reception mounted therein. A wiring pattern 7, which connects an input terminal A of the transmission filter chip 2 with a transmission side signal terminal Tx in a first arrangement, has two branch wiring portions 72, 73 extending from the transmission side signal terminal Tx toward the input terminal A of the transmission filter chip 2 in the first arrangement and toward an output terminal D of the reception filter chip 3 in a second arrangement. A wiring pattern 8, which connects the output terminal D of the reception filter chip 3 with a reception side signal terminal Rx in the first arrangement, has two branch wiring portions 82, 83 extending from the reception side signal terminal Rx toward the output terminal D of the reception filter chip 3 in the first arrangement and toward the input terminal A of the transmission filter chip 2 in the second arrangement.

    摘要翻译: [问题]通过使用通用包装提供适用于两种设计规格的层压陶瓷电子设备。 [解决方案]本发明的层叠陶瓷电子器件具有安装在其中的用于发送和接收的滤波器芯片2,3。 将发送滤波器芯片2的输入端子A与第一配置的发送侧信号端子Tx连接的布线图案7具有从发送侧信号端子Tx朝向输入端子A延伸的两个支路布线部72,73 的第一布置中的发送滤波器芯片2,并且在第二布置中朝向接收滤波器芯片3的输出端子D。 将接收滤波器芯片3的输出端D与第一配置中的接收侧信号端子Rx连接的布线图案8具有从接收侧信号端子Rx朝向输出端子D延伸的两个分支布线部82,83 的第一布置中的接收滤波器芯片3,并且在第二布置中朝向发送滤波器芯片2的输入端子A.

    Manufacturing method of semiconductor device
    22.
    发明申请
    Manufacturing method of semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号:US20060068538A1

    公开(公告)日:2006-03-30

    申请号:US11233648

    申请日:2005-09-23

    申请人: Takashi Ogura

    发明人: Takashi Ogura

    IPC分类号: H01L21/8234 H01L21/336

    摘要: A method of manufacturing a semiconductor device comprises the following steps: a step of depositing a silicon oxide film on the top surface of an epitaxial layer of the region where a high withstand voltage MOS transistor is formed; a step of subsequently depositing a silicon oxide film on the top surface of the epitaxial layer according to the thickness of a gate oxide film of a low withstand voltage MOS transistor; and a step of subsequently adjusting the thickness of the silicon oxide film on the top surface of the high withstand voltage MOS transistor by etching and forming a P-type diffusion layer by ion-implantation method. This method can manufacture elements having gate oxide films different in thickness at low cost.

    摘要翻译: 一种制造半导体器件的方法包括以下步骤:在形成高耐压MOS晶体管的区域的外延层的顶表面上沉积氧化硅膜的步骤; 随后根据低耐压MOS晶体管的栅极氧化膜的厚度在外延层的顶表面上沉积氧化硅膜的步骤; 以及通过蚀刻并通过离子注入法形成P型扩散层,随后调整高耐压MOS晶体管的顶表面上的氧化硅膜的厚度的步骤。 该方法可以以低成本制造具有不同厚度的栅极氧化膜的元件。

    Organic electroluminescence device
    23.
    发明申请
    Organic electroluminescence device 有权
    有机电致发光器件

    公开(公告)号:US20050088082A1

    公开(公告)日:2005-04-28

    申请号:US10944947

    申请日:2004-09-21

    IPC分类号: H01J1/62 H01L51/52

    摘要: An organic EL device includes an anode, a cathode having optical transparency, and an organic EL layer disposed between the anode and the cathode and including at least a fluorescent layer. The cathode has a metal layer including a first metal and a low work function metal, and a conductive oxide layer arranged in this order from the organic EL layer side, and the work function of the low work function metal is smaller than the work function of the first metal. The metal layer has a first surface on the organic EL layer side and a second surface on the conductive oxide layer side, and the concentration of the low work function metal at the first surface is greater than the concentration of the low work function metal at the second surface.

    摘要翻译: 有机EL器件包括阳极,具有光学透明度的阴极和设置在阳极和阴极之间并且至少包括荧光层的有机EL层。 阴极具有包括第一金属和低功函数金属的金属层和从有机EL层侧依次排列的导电氧化物层,并且低功函数金属的功函数小于 第一金属。 金属层在有机EL层侧具有第一表面和导电氧化物层侧的第二表面,第一表面处的低功函数金属的浓度大于第一表面处的低功函数金属的浓度 第二面。

    Photoelectric conversion device and driving method therefor
    24.
    发明授权
    Photoelectric conversion device and driving method therefor 失效
    光电转换装置及其驱动方法

    公开(公告)号:US06690493B1

    公开(公告)日:2004-02-10

    申请号:US09691065

    申请日:2000-10-19

    IPC分类号: H04N104

    CPC分类号: H04N5/32 H04N5/3454

    摘要: In a photoelectric conversion device for reading signals in succession from plural photoelectric converting elements (S11-S33), arranged two-dimensionally on a substrate, by successively scanning drive lines (g1-g3) in the X-direction thereby transferring signals charges along signal lines in the Y-direction, for reading the signals of the photoelectric converting elements in a partial area, only the arbitrarily selected drive lines for the plural photoelectric converting elements are scanned in succession while the remaining drive lines are not driven or are driven simultaneously for transferring the charges at a timing different from the timing of drive of the arbitrarily selected drive lines.

    摘要翻译: 在用于从多个光电转换元件(S11-S33)读取连续的信号的光电转换装置中,通过在X方向依次扫描驱动线(g1-g3),从而沿着信号传输信号电荷,二维地布置在基板上 在Y方向上的线,用于读取部分区域中的光电转换元件的信号,只有多个光电转换元件的任意选择的驱动线被连续扫描,而其余驱动线不被驱动或同时驱动 在与任意选择的驱动线的驱动时刻不同的时刻传送电荷。

    Process for producing thin film magnetic heads
    25.
    发明授权
    Process for producing thin film magnetic heads 失效
    薄膜磁头制造方法

    公开(公告)号:US6012218A

    公开(公告)日:2000-01-11

    申请号:US42631

    申请日:1998-03-17

    IPC分类号: G11B5/31 G11B5/39 G11B5/127

    摘要: The invention provides a thin film magnetic head including an upper core layer 9 which comprises a front first core layer 91a formed on a gap spacer layer 6 and having the same width as a track width on the recording medium at least in the vicinity of the face to be opposed to a recording medium, and a second core layer 92 extending from the medium-opposed face over the upper surface of the front first core layer 91a and further over the upper surface of an upper insulating layer 72. The upper core layer 9 has a thickness greater in a region extending from the medium-opposed face to a depth end restricting face DE of a lower insulating layer 71 than in a region extending over the upper surface of the upper insulating layer 72. The front first core layer 91a has an upper surface flush with the upper surface of the lower insulating layer 71. This structure gives an accurate track width and assures production with a high yield.

    摘要翻译: 本发明提供了一种薄膜磁头,其包括上芯层9,其包括形成在间隙隔离层6上的前第一芯层91a,并且至少在表面附近具有与记录介质上的磁道宽度相同的宽度 与记录介质相对,第二芯层92从前第一芯层91a的上表面延伸并且在上绝缘层72的上表面上方从介质相对面延伸。上芯层9 在从中间相对面延伸到下绝缘层71的深度限制面DE的区域中的厚度大于在上绝缘层72的上表面延伸的区域中的厚度。前第一芯层91a具有 上表面与下绝缘层71的上表面齐平。这种结构提供了准确的轨道宽度并以高产量确保生产。

    Diaphragm-edge integral moldings for speakers and acoustic transducers
comprising same
    26.
    发明授权
    Diaphragm-edge integral moldings for speakers and acoustic transducers comprising same 失效
    用于扬声器的隔膜边缘整体模制件和包括其的声学换能器

    公开(公告)号:US5744761A

    公开(公告)日:1998-04-28

    申请号:US266924

    申请日:1994-06-28

    摘要: A diaphragm for speakers comprises a self-support, shaped body including a tightly woven synthetic polymer fiber cloth substrate which has at least a diaphragm portion and edge portion shaped integrally with and extending from the diaphragm portion. The diaphragm portion of the cloth substrate had a polymer resin at least partially impregnated therein and the edge portion has a relatively flexible polymer material at least partially impregnated therein so that the edge portion is lower in stiffness than the diaphragm portion. The diaphragm-edge integral molding is fabricated by applying the respective types of polymers to the diaphragm and edge portions of the cloth substrate and subjecting the applied substrate to hot pressing in a mold capable of forming the integral molding. When applied as dynamic speakers, the integral molding exhibits a broad frequency band, low distortion rates and high sound quality. The stiffness difference between the diaphragm and edge portions may be created by using one type of thermoplastic resin which is applied to the diaphragm and edge portions in different amounts.

    摘要翻译: 用于扬声器的隔膜包括自支撑成形体,其包括紧密编织的合成聚合物纤维布基底,其至少具有隔膜部分和与隔膜部分一体成形并且从隔膜部分延伸的边缘部分。 布基材的隔膜部分具有至少部分地浸渍在其中的聚合物树脂,并且边缘部分具有至少部分浸渍在其中的相对柔性的聚合物材料,使得边缘部分的刚度比隔膜部分低。 通过将各种类型的聚合物施加到布基材的隔膜和边缘部分并对所施加的基材进行热压以在能够形成整体成型的模具中进行热压来制造膜片边缘整体成型。 当作为动态扬声器使用时,整体成型具有宽频带,低失真率和高音质。 隔膜和边缘部分之间的刚度差可以通过使用一种类型的热塑性树脂来产生,该类型的热塑性树脂以不同的量施加到隔膜和边缘部分。

    Magnetic head with suppressed generation of pseudogap
    28.
    发明授权
    Magnetic head with suppressed generation of pseudogap 失效
    磁头与抑制生成伪距

    公开(公告)号:US5278716A

    公开(公告)日:1994-01-11

    申请号:US974757

    申请日:1992-11-12

    IPC分类号: G11B5/147 G11B5/235

    CPC分类号: G11B5/147 G11B5/235

    摘要: A magnetic head comprises a pair of magnetic core halves, heat-resistant thin films and ferromagnetic thin films, the pair of magnetic core halves being opposed to each other through a non-magnetic material such as SiO.sub.2 to form a magnetic gap. The magnetic core halves are made of a ferromagnetic oxide such as ferrite and have gap forming faces to be opposed to each other to form the magnetic gap. The gap forming faces are etched by phosphoric acid solution and then purified by reverse sputtering, so that a grown crystal of the ferromagnetic oxide is exposed on the gap forming faces. A heat-resistant thin film of a heat-resistant material such as SiO.sub.2 is formed on each of the gap forming faces. A ferromagnetic thin film of a ferromagnetic metal material such as sendust is formed on each heat-resistant thin film. Preferably, the thickness of the heat-resistant thin film to be formed is 1 nm or more and one tenth or less of the width of the magnetic gap. For example, SiO.sub.2 films of 5 nm in thickness as the heat-resistant thin films are formed on the respective gap forming faces and sendust films of 3 .mu.m in thickness as the ferromagnetic metal thin films are formed on the respective SiO.sub.2 films. In this case, the gap length of the magnetic gap is set to 0.2 .mu.m.

    摘要翻译: 磁头包括一对磁芯半部,耐热薄膜和铁磁性薄膜,一对磁芯半部通过非磁性材料如SiO 2彼此相对以形成磁隙。 磁芯半部由诸如铁氧体的铁磁性氧化物制成,并且具有彼此相对的间隙形成面以形成磁隙。 通过磷酸溶液蚀刻间隙形成面,然后通过反溅射进行纯化,使得在间隙形成面上暴露铁磁性氧化物的生长晶体。 在每个间隙形成面上形成耐热材料如SiO 2的耐热薄膜。 在每个耐热薄膜上形成铁硬金属材料如铁硅铝铁合金的铁磁薄膜。 优选地,要形成的耐热薄膜的厚度为磁隙宽度的1nm以上且十分之一以下。 例如,由于在各SiO 2膜上形成强磁性金属薄膜,所以在3(μm)m的间隙形成面和厚度为3μm的厚度的薄膜上,形成5nm厚的SiO 2膜。 在这种情况下,磁隙的间隙长度设定为0.2(my)m。

    Process for producing magnetic head of the floating type
    29.
    发明授权
    Process for producing magnetic head of the floating type 失效
    浮动式磁头制造工艺

    公开(公告)号:US5225033A

    公开(公告)日:1993-07-06

    申请号:US793967

    申请日:1991-11-18

    IPC分类号: G11B5/187

    CPC分类号: G11B5/1871

    摘要: A process for producing a magnetic head of the floating type having a head portion and a slider portion comprises preparing a core block 7 having arranged on a plane a head forming portion and a slider forming portion for providing the head portion and the slider portion, respectively, and forming at least one pair of track width defining grooves 14, 14 across a gap spacer 4 by dry-etching a surface 8 of the core block 7 which is to be opposed to media to form a magnetic gap portion G by a portion of the gap spacer of a predetermined track width between the pair of grooves.

    摘要翻译: 一种具有头部和滑块部分的浮动式磁头的制造方法,包括:准备具有头部形成部的平面上的芯块7和分别设置头部和滑块部的滑块形成部 并且通过干式蚀刻芯块7的与介质相对的表面8来形成至少一对轨道宽度限定槽14,14跨越间隙隔离物4,以形成磁隙部分G,以形成磁隙部分G 在一对槽之间的预定轨道宽度的间隙垫片。