公开(公告)号：US08324335B2

公开(公告)日：2012-12-04

申请号：US12514323

申请日：2007-11-16

Applicant: Masaaki Ito ,  Hideshi Uchino ,  Kazuya Sakata ,  Masaru Aoki ,  Masato Nakano ,  Shinichi Kitade

Inventor： Masaaki Ito ,  Hideshi Uchino ,  Kazuya Sakata ,  Masaru Aoki ,  Masato Nakano ,  Shinichi Kitade

IPC: C08F210/06 ,  C08F210/16 ,  C08L23/14

CPC classification number: C08F210/06 ,  C08F4/65904 ,  C08F4/65912 ,  C08F4/65927 ,  C08F10/00 ,  C08F10/10 ,  C08F110/06 ,  C08L23/14 ,  C08L2205/02 ,  C08L2314/06 ,  C08F2/001 ,  C08F4/65916 ,  C08L2666/06 ,  C08F2500/01 ,  C08F2500/12 ,  C08F2500/09 ,  C08F2500/11 ,  C08F210/16

Abstract: A propylene-based polymer comprising the following component (A) insoluble in p-xylene at 25° C. and component (B) soluble in p-xylene at 25° C., wherein (i) the weight average molecular weight (Mw) measured with GPC is 100,000 to 1,000,000, (ii) the content of the component insoluble in hot p-xylene is 0.3% by weight or lower, and (iii) the degree of strain hardening (λ max) in measurement of elongational viscosity is 2.0 or higher; and a method for producing the same, along with a resin composition comprising a propylene-ethylene copolymer (Z) in an amount of 50.0 to 99.9% by weight and a propylene-based polymer (M) in an amount of 0.1 to 50.0% by weight.Component (A): a component (CXIS) insoluble in p-xylene at 25° C., having requirements specified by (A1) to (A5). Component (B): a component (CXS) is soluble in p-xylene at 25° C., having requirements specified by (B1) to (B4).

Abstract translation: 包含在25℃下不溶于对二甲苯的下述组分（A）和在25℃下可溶于对二甲苯的组分（B）的丙烯基聚合物，其中（i）重均分子量（Mw） 使用GPC测定为100,000〜1,000,000，（ii）不溶于热对二甲苯的成分的含量为0.3重量％以下，（iii）伸长粘度测定中的应变硬化度（λmax）为2.0 或更高; 及其制造方法，以及含有50.0〜99.9重量％的丙烯 - 乙烯共聚物（Z）和丙烯系聚合物（M）的含量为0.1〜50.0％的树脂组合物，其量为0.1〜50.0％ 重量。 组分（A）：在25℃下不溶于对二甲苯的组分（CXIS），具有（A1）至（A5）规定的要求。 组分（B）：组分（CXS）在25℃下可溶于对二甲苯，具有（B1）至（B4）所规定的要求。

公开(公告)号：US07847290B2

公开(公告)日：2010-12-07

申请号：US12411799

申请日：2009-03-26

Applicant: Yasuyoshi Itoh ,  Yuichi Masutani ,  Masaru Aoki

Inventor： Yasuyoshi Itoh ,  Yuichi Masutani ,  Masaru Aoki

IPC: H01L33/00

CPC classification number: H01L27/1288 ,  H01L27/124 ,  H01L29/66765

Abstract: In forming a thin film transistor using multi-tone exposure, a wiring width of a foundational wiring is 40 μm or less, and a ratio of a wiring width of a foundational wiring in a dense case to a space between adjacent wirings is 1.7, preferably 1.0 or less.

Abstract translation: 在使用多色调曝光形成薄膜晶体管时，基线的布线宽度为40μm以下，致密情况下的基布线的布线宽度与相邻布线之间的间隔的比例为1.7，优选 1.0以下。

公开(公告)号：US20090242886A1

公开(公告)日：2009-10-01

申请号：US12411799

申请日：2009-03-26

Applicant: Yasuyoshi Itoh ,  Yuichi Masutani ,  Masaru Aoki

Inventor： Yasuyoshi Itoh ,  Yuichi Masutani ,  Masaru Aoki

IPC: H01L29/04

CPC classification number: H01L27/1288 ,  H01L27/124 ,  H01L29/66765

Abstract: In forming a thin film transistor using multi-tone exposure, a wiring width of a foundational wiring is 40 μm or less, and a ratio of a wiring width of a foundational wiring in a dense case to a space between adjacent wirings is 1.7, preferably 1.0 or less.

Abstract translation: 在使用多色调曝光形成薄膜晶体管时，基线的布线宽度为40μm以下，致密情况下的基布线的布线宽度与相邻布线之间的间隔的比例为1.7，优选 1.0以下。

公开(公告)号：US20080131668A1

公开(公告)日：2008-06-05

申请号：US11943976

申请日：2007-11-21

Applicant: Yuichi MASUTANI ,  Shigeaki Noumi ,  Takeshi Shimamura ,  Masaru Aoki

Inventor： Yuichi MASUTANI ,  Shigeaki Noumi ,  Takeshi Shimamura ,  Masaru Aoki

IPC: B44C1/17 ,  G03C5/00

CPC classification number: G02F1/1362 ,  G02F2201/48 ,  Y10T428/24802

Abstract: An array substrate has regions in which an intermediate resist film thickness is formed and processed by an intermediate exposure amount which does not completely expose a resist, respectively on a drain electrode, source terminal, and a common connection wiring which are made of a second conductive film. Thin film patterns or a common wiring made of a first conductive film is formed in substantially entire regions on the bottom layers of the regions so that the heights from a substrate are substantially the same.

Abstract translation: 阵列基板具有分别在漏极电极，源极端子和公共连接布线上由不是完全暴露抗蚀剂的中间曝光量形成并处理中间抗蚀剂膜厚度的区域，所述漏极电极，源极端子和公共连接布线由第二导电 电影。 在这些区域的底层上的基本上整个区域中形成由第一导电膜制成的薄膜图案或公共布线，使得来自基板的高度基本相同。

公开(公告)号：US06714274B2

公开(公告)日：2004-03-30

申请号：US09729086

申请日：2000-12-05

Applicant: Masaru Aoki ,  Masanao Kobayashi

Inventor： Masaru Aoki ,  Masanao Kobayashi

IPC: G02F11343

CPC classification number: H01L29/78696 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/06 ,  H01L29/78621

Abstract: A liquid crystal display apparatus in which an arrangement possibly susceptible to degradation in display quality by a miss shot of a laser used for turning amorphous silicon into polycrystalline silicon is avoided and a narrow peripheral frame can be attained. A gate interconnection for transistors in a driving circuit area is arranged along a folded line having two lines extending in two different directions and a bent portion. Channel regions of the transistors are arranged along the two lines, such that the channel regions do not overlap the bent portion.

Abstract translation: 一种液晶显示装置，其中避免了通过用于将非晶硅转化为多晶硅的激光器的漏光镜而导致显示质量下降的布置的布置，并且可以获得窄的外围框架。 沿着具有沿两个不同方向延伸的两条线的折叠线和弯曲部分布置驱动电路区域中的晶体管的栅极互连。 晶体管的沟道区域沿着两条线布置，使得沟道区域不与弯曲部分重叠。

公开(公告)号：US6117481A

公开(公告)日：2000-09-12

申请号：US200738

申请日：1998-11-30

Applicant: Masaru Aoki

Inventor： Masaru Aoki

IPC: H01L21/027 ,  B05C5/02 ,  B05D1/00 ,  B05D1/26 ,  G03F7/16 ,  B05D3/14 ,  B05D5/12

CPC classification number: B05D1/26 ,  G03F7/162 ,  B05D1/002

Abstract: A manufacturing method for electronic devices including applying photosensitive or non-photosensitive resin onto a substrate by a slit-type dropping nozzle method. A slit-type dropping nozzle for performing resin application is scanned to apply resin while maintaining a scanning direction of the nozzle in an inclined condition relative to the substrate at a specified angle in substantially a same direction as a rotating direction of the substrate after resin has been applied thereto. With the above method, even in a case in which clogging of a part of the nozzle due to foreign matter and dropping defects have occurred, the uniformity in film thickness typically will not be affected unless the defect has occurred in the center of the substrate.

Abstract translation: 一种电子设备的制造方法，包括通过狭缝式滴墨喷嘴法将感光性树脂或非感光性树脂涂布在基材上。 扫描树脂施加用的狭缝式滴
滴喷嘴，同时保持喷嘴的扫描方向在相对于基板的倾斜状态下以与基板的旋转方向成大致相同方向的特定角度保持树脂， 适用于此。 通过上述方法，即使在由于异物和滴落缺陷引起的喷嘴的一部分发生堵塞的情况下，一般不会影响膜厚度的均匀性，除非在基板的中心发生缺陷。

公开(公告)号：US20140194277A1

公开(公告)日：2014-07-10

申请号：US14008965

申请日：2012-03-29

Applicant: Yoshiyuki Ishihama ,  Ryousuke Asakawa ,  Tsutomu Sakuragi ,  Tetsurou Fukuda ,  Kazuya Sakata ,  Masaru Aoki ,  Kenji Kawagishi ,  Keiichi Yoshimoto

Inventor： Yoshiyuki Ishihama ,  Ryousuke Asakawa ,  Tsutomu Sakuragi ,  Tetsurou Fukuda ,  Kazuya Sakata ,  Masaru Aoki ,  Kenji Kawagishi ,  Keiichi Yoshimoto

IPC: C08F210/16 ,  C08F4/6592 ,  C08J5/18 ,  C08L23/08

CPC classification number: C08F210/16 ,  C08F4/65908 ,  C08F4/65912 ,  C08F4/65916 ,  C08F4/65927 ,  C08F10/02 ,  C08J5/18 ,  C08L23/0815 ,  C08L2205/025 ,  C08L2314/06 ,  C08F210/14 ,  C08F2500/04 ,  C08F2500/11 ,  C08F2500/12 ,  C08F2500/17 ,  C08F2500/26 ,  C08F210/08

Abstract: An object of the present invention is to provide a polyethylene-based resin composition excellent in the moldability and at the same time, excellent in the balance between impact strength and stiffness as well as in the transparency, and a molded product and a film, which are obtained by the molding of the polyethylene-based resin composition. The polyethylene-based resin composition of the present invention comprises from 41 to 99 wt % of (A) an ethylene-based polymer satisfying specific conditions and from 1 to 59 wt % of (B) an ethylene-based polymer satisfying specific conditions, wherein MFR of the composition as a whole is from 0.05 to 50 g/10 min and the density is from 0.910 to 0.960 g/cm3.

Abstract translation: 本发明的目的是提供一种成型性优异，同时在冲击强度和刚度以及透明性之间的平衡方面优异的聚乙烯类树脂组合物，以及成型体和膜，其中 是通过模塑聚乙烯类树脂组合物得到的。 本发明的聚乙烯类树脂组合物含有（A）满足特定条件的（A）乙烯类聚合物和1〜59重量％（B）满足特定条件的乙烯系聚合物的41〜99重量％，其中， 组合物的总体MFR为0.05〜50g / 10min，密度为0.910〜0.960g / cm 3。

公开(公告)号：US08624244B2

公开(公告)日：2014-01-07

申请号：US13346193

申请日：2012-01-09

Applicant: Reiko Noguchi ,  Kazunori Inoue ,  Masaru Aoki ,  Toshihiko Iwasaka

Inventor： Reiko Noguchi ,  Kazunori Inoue ,  Masaru Aoki ,  Toshihiko Iwasaka

IPC: H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/12 ,  H01L29/76 ,  H01L31/112 ,  H01L29/15

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/41733

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.

Abstract translation: 薄膜晶体管包括栅电极，半导体层以及放置在半导体层上并与半导体层电连接的源电极和漏电极。 半导体层包括透光半导体膜和放置在透光半导体膜上并具有比透光半导体膜低的透光率的欧姆导电膜。 形成欧姆导电膜不会从透光半导体膜突出。 欧姆导电膜以分离的部分形成在源电极和漏电极之间的通道部分之间。 源电极和漏电极通过欧姆导电膜连接到透光半导体膜。

公开(公告)号：US20120187393A1

公开(公告)日：2012-07-26

申请号：US13346193

申请日：2012-01-09

Applicant: Reiko NOGUCHI ,  Kazunori Inoue ,  Masaru Aoki ,  Toshihiko Iwasaka

Inventor： Reiko NOGUCHI ,  Kazunori Inoue ,  Masaru Aoki ,  Toshihiko Iwasaka

IPC: H01L33/08

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/41733

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer, and a source electrode and a drain electrode placed on the semiconductor layer and electrically connected with the semiconductor layer. The semiconductor layer includes a light-transmitting semiconductor film and an ohmic conductive film placed on the light-transmitting semiconductor film and having a lower light transmittance than the light-transmitting semiconductor film. The ohmic conductive film is formed not to protrude from the light-transmitting semiconductor film. The ohmic conductive film is formed in separate parts with a channel part between the source electrode and the drain electrode interposed therebetween. The source electrode and the drain electrode are connected to the light-transmitting semiconductor film through the ohmic conductive film.

Abstract translation: 薄膜晶体管包括栅电极，半导体层以及放置在半导体层上并与半导体层电连接的源电极和漏电极。 半导体层包括透光半导体膜和放置在透光半导体膜上并具有比透光半导体膜低的透光率的欧姆导电膜。 形成欧姆导电膜不会从透光半导体膜突出。 欧姆导电膜以分离的部分形成在源电极和漏电极之间的通道部分之间。 源电极和漏电极通过欧姆导电膜连接到透光半导体膜。

公开(公告)号：US20110017993A1

公开(公告)日：2011-01-27

申请号：US12831658

申请日：2010-07-07

Applicant: Kumi TSUDA ,  Kazunori Inoue ,  Masaru Aoki

Inventor： Kumi TSUDA ,  Kazunori Inoue ,  Masaru Aoki

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/4908 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384

Abstract: There is provided a TFT substrate including a gate electrode having a thick film part and a thin film part with a smaller film thickness than the thick film part, a semiconductor active film formed above the thick film part and the thin film part of the gate electrode, an ohmic contact film formed on an inside of the semiconductor active film and on the semiconductor active film corresponding to the thin film part on an outside of the thick film part, and an electrode film constituting a source electrode and a drain electrode, having a planar shape identical to or on an inside of the ohmic contact film, and formed on the ohmic contact film.

Abstract translation: 提供了一种TFT基板，包括具有厚膜部分的栅电极和具有比厚膜部分更薄的膜厚度的薄膜部分，形成在厚膜部分上方的半导体活性膜和栅电极的薄膜部分 形成在半导体有源膜的内侧上的半导体有源膜上的欧姆接触膜和对应于厚膜部的外侧的薄膜部的半导体活性膜，以及构成源电极和漏电极的电极膜，具有 平面形状与欧姆接触膜的内部相同或在其内部，并形成在欧姆接触膜上。