摘要:
Crossbar circuitry, and a method of operation of such crossbar circuitry, are provided. The crossbar circuitry has an array of data input paths and data output paths where the data output paths are transverse to the data input paths. At each intersection between a data input path and a data output path, a crossbar cell is provided that comprises a configuration storage circuit programmable to store a routing value, a transmission circuit, and an arbitration circuit. In a transmission mode of operation, the transmission circuit is responsive to the routing value being a first value, indicating that the data input path should be coupled to the data output path, to detect the data input along the data input path, and to output an indication of that data on the data output path at the associated intersection. In an arbitration mode of operation, the arbitration circuitry is operable in the presence of an asserted transmission request from the associated source circuit to operate in combination with the arbitration circuits of other crossbar cells associated with the same data output path to re-use the bit lines of the data output path to detect the presence of multiple asserted transmission requests for the same data output path. In the event of such multiple asserted transmission requests, the arbitration circuitry operates in combination with the other arbitration circuits to implement a predetermined priority scheme to cause the configuration storage circuit of only one crossbar cell associated with the same data output path to have its routing value programmed to the first value, thereby resolving conflict between the multiple asserted transmission requests according to the predetermined priority scheme. Such a construction of crossbar circuitry enables a very efficient resolution of conflicts to be performed, whilst providing a very regular design, with uniform delay across all paths, and which requires significantly less control lines that typical prior art crossbar designs. Such crossbar circuitry is readily scalable to form large crossbars.
摘要:
Interconnect circuitry 2 has a plurality of data source circuits 8 connected to respective input paths 4 and a plurality of data destination circuits 10 connected to respective output paths 6. Connection cells 12 provide selective connections between input paths 4 and output paths 6. Arbitration circuitry 26 provides adaptive priority arbitration between overlapping requests received at different input paths. Priority bits 16 within a matrix of priority bit 46 for each output path 10 are used to represent the priority relationships between different input paths which compete for access to that output path 10. Update operations are applied on a per row or per column basis within the matrix to implement update schemes such as least recently granted, most recently granted, round robin, reversal, swap, selective least recently granted, selective most recently granted etc.
摘要:
Crossbar circuitry has data input and output paths, and at each intersection between a data input and output path, a crossbar cell is provided. A transmission circuit is responsive to a stored routing value to couple a data input path to a selected data output path. Pre-selection circuitry cooperates with the pre-selection circuits of other crossbar cells on the same data output path to use the bit lines of the data output path to compare quality-of-service values associated with multiple asserted transmission requests and to determine a subset thereof which have a highest value of the quality-of-service values. Arbitration circuitry implements a predetermined priority scheme to choose from that subset of requests and to cause the configuration storage circuit of only one crossbar cell associated with the same data output path to have its routing value programmed to the first value, thereby resolving conflict between multiple asserted transmission requests.
摘要:
There is provided a memory for storing data comprising: a fast data reading mechanism operable to read a data value from said memory to generate a fast read result that is output from said memory for further processing; a slow data reading mechanism operable to read said data value from said memory to generate a slow read result available after said fast read result has been output for further processing, said slow data reading mechanism being less prone to error in reading said data value than said fast data reading mechanism; a comparator operable to compare said fast read result and said slow read result to detect if said fast read result differs from said slow read result; and error repair logic operable if said comparator detects that said fast read result differs from said slow read result to suppress said further processing using said fast read result, to output said slow read result in place of said fast read result and to restart said further processing based upon said slow read result.
摘要:
There is provided a memory for storing data comprising: a fast data reading mechanism operable to read a data value from said memory to generate a fast read result that is output from said memory for further processing; a slow data reading mechanism operable to read said data value from said memory to generate a slow read result available after said fast read result has been output for further processing, said slow data reading mechanism being less prone to error in reading said data value than said fast data reading mechanism a comparator operable to compare said fast read result and said slow read result to detect if said fast read result differs from said slow read result; and error repair logic operable if said comparator detects that said, fast read result differs from said slow read result to suppress said further processing using said fast read result, to output said slow read result in place of said fast read result and to restart said further processing based upon said slow read result.
摘要:
An integrated circuit includes one or more portions having error detection and error correction circuits and which is operated with operating parameters giving finite non-zero error rate as well as one or more portions formed and operated to provide a zero error rate.
摘要:
An integrated circuit includes a plurality of processing stages each including processing logic 1014, a non-delayed signal-capture element 1016, a delayed signal-capture element 1018 and a comparator 1024. The non-delayed signal-capture element 1016 captures an output from the processing logic 1014 at a non-delayed capture time. At a later delayed capture time, the delayed signal-capture element 1018 also captures a value from the processing logic 1014. An error detection circuit 1026 and error correction circuit 1028 detect and correct random errors in the delayed value and supplies an error-checked delayed value to the comparator 1024. The comparator 1024 compares the error-checked delayed value and the non-delayed value and if they are not equal this indicates that the non-delayed value was captured too soon and should be replaced by the error-checked delayed value. The non-delayed value is passed to the subsequent processing stage immediately following its capture and accordingly error recovery mechanisms are used to suppress the erroneous processing which has occurred by the subsequent processing stages, such as gating the clock and allowing the correct signal values to propagate through the subsequent processing logic before restarting the clock. The operating parameters of the integrated circuit, such as the clock frequency, the operating voltage, the body biased voltage, temperature and the like are adjusted so as to maintain a finite non-zero error rate in a manner that increases overall performance.
摘要:
A data processing apparatus is provided having a cache memory comprising a data storage array and a tag array and a cache controller coupled to the cache memory responsive to a cache access request from processing circuitry to perform cache look ups. The cache memory is arranged such that it has a first memory cell group configured to operate in a first voltage domain and a second memory cell group configured to operate in a second voltage domain that is different from the first voltage domain. A corresponding data processing method is also provided.
摘要:
An integrated circuit 2 includes logic circuitry 10 and sequential storage elements 8. Both the logic circuit 10 and sequential storage elements 8 can be subject to particle strikes giving rise to single event upset errors. These single event upset errors can be detected by detecting a transition in the stored value stored by the sequential storage elements 8 occurring outside of a valid transition period associated with that sequential storage element 8.
摘要:
A memory cell structure for a memory device includes a read transistor having a floating gate node, a tunnelling capacitor, and a coupling capacitor stack. The tunnelling capacitor is connected to the floating gate node and has a first programming terminal, and the coupling capacitor stack is connected to the floating gate node and has a second programming terminal. The coupling capacitor stack includes at least two coupling capacitors arranged in series between the floating gate node and the second programming terminal, with the coupling capacitor stack having a larger capacitance than the tunnelling capacitor. Such a memory cell structure is efficient in terms of area, and can be manufactured using standard CMOS logic manufacturing processes, thereby avoiding some of the complexities involved in the production of conventional EEPROM and Flash memory devices.