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公开(公告)号：US20080183312A1
公开(公告)日：2008-07-31
申请号：US11668537
申请日：2007-01-30
Applicant: Merritt Funk , Sachin Deshpande , Kevin Lally
Inventor： Merritt Funk , Sachin Deshpande , Kevin Lally
IPC: G05B13/02
CPC classification number: G05B19/41865 , G05B2219/32097 , G05B2219/45031 , G05B2219/45212 , Y02P90/20 , Y02P90/86
Abstract: The invention can provide a method of etch processing a wafer using a Real-Time Parameter Tuning (RTPT) procedure to receive an input message that can include a pass-through message, a real-time feedforward message, or a real-time optimization message, or any combination thereof. The RTPT procedures can use real-time wafer data to create, modify, and/or use etch recipe data, etch profile data, and/or etch model data. In addition, RTPT procedures can use real-time wafer data to create, modify, and/or use process recipe data, process profile data, and/or process model data.
Abstract translation: 本发明可以提供使用实时参数调整（RTPT）过程来蚀刻处理晶片的方法，以接收可以包括直通消息，实时前馈消息或实时优化消息的输入消息 ，或其任何组合。 RTPT程序可以使用实时晶片数据来创建，修改和/或使用蚀刻配方数据，蚀刻轮廓数据和/或蚀刻模型数据。 此外，RTPT程序可以使用实时晶片数据来创建，修改和/或使用过程配方数据，过程配置文件数据和/或过程模型数据。
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22.发明授权公开(公告)号：US07324193B2
公开(公告)日：2008-01-29
申请号：US11396214
申请日：2006-03-30
Applicant: Kevin Lally , Merritt Funk , Radha Sundararajan
Inventor： Kevin Lally , Merritt Funk , Radha Sundararajan
CPC classification number: G01N21/95607 , G01N21/4788 , G01N21/9501 , H01L22/12 , H01L2924/0002 , H01L2924/00
Abstract: A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology, the method includes obtaining a measured diffraction signal from a damaged periodic structure. A hypothetical profile of the damaged periodic structure is defined. The hypothetical profile having an undamaged portion, which corresponds to an undamaged area of a first material in the damaged periodic structure, and a damaged portion, which corresponds to a damaged area of the first material in the damaged periodic structure. The undamaged portion and the damaged portion have different properties associated with them. A simulated diffraction signal is calculated for the hypothetical damaged periodic structure using the hypothetical profile. The measured diffraction signal is compared to the simulated diffraction signal. If the measured diffraction signal and the simulated diffraction signal match within a matching criterion, then a damage amount for the damaged periodic structure is established based on the damaged portion of the hypothetical profile used to calculate the simulated diffraction signal.
Abstract translation: 一种使用光学测量法测量在半导体晶片上形成的损坏结构的方法，该方法包括从损坏的周期性结构获得测量的衍射信号。 定义损坏的周期结构的假设剖面。 具有未损坏部分的假想轮廓，其对应于损坏的周期性结构中的第一材料的未损坏区域，以及损坏部分，其对应于损坏的周期性结构中的第一材料的损坏区域。 未损伤部分和损坏部分具有与它们相关联的不同性质。 使用假设曲线计算假设损坏的周期性结构的模拟衍射信号。 将测得的衍射信号与模拟衍射信号进行比较。 如果测量的衍射信号和模拟衍射信号在匹配标准内匹配，则基于用于计算模拟衍射信号的假想轮廓的损坏部分建立损坏的周期性结构的损伤量。
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公开(公告)号：US20070237383A1
公开(公告)日：2007-10-11
申请号：US11390469
申请日：2006-03-28
Applicant: Merritt Funk , Radha Sundararajan , Daniel Prager , Wesley Natzle
Inventor： Merritt Funk , Radha Sundararajan , Daniel Prager , Wesley Natzle
IPC: G06K9/00
CPC classification number: G03F7/70625 , G03F7/70525
Abstract: A method of processing a wafer is presented that includes creating a pre-processing measurement map using measured metrology data for the wafer including metrology data for at least one isolated structure on the wafer, metrology data for at least one nested structure on the wafer, or mask data. At least one pre-processing prediction map is calculated for the wafer. A pre-processing confidence map is calculated for the wafer. The pre-processing confidence map includes a set of confidence data for the plurality of dies on the wafer. A prioritized measurement site is determined when the confidence data for one or more dies is not within the confidence limits. A new measurement recipe that includes the prioritized measurement site is then created.
Abstract translation: 提出了一种处理晶片的方法，其包括使用测量的用于晶片的测量数据创建预处理测量图，包括晶片上的至少一个隔离结构的测量数据，晶片上的至少一个嵌套结构的度量数据，或 掩码数据。 为晶片计算至少一个预处理预测图。 计算晶片的预处理置信图。 预处理置信图包括晶片上的多个管芯的一组置信数据。 当一个或多个管芯的置信度数据不在置信限度内时，确定优先测量点。 然后创建包含优先测量站点的新测量配方。
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公开(公告)号：US20070232045A1
公开(公告)日：2007-10-04
申请号：US11394592
申请日：2006-03-30
Applicant: Kevin Lally , Merritt Funk , Radha Sundararajan
Inventor： Kevin Lally , Merritt Funk , Radha Sundararajan
IPC: H01L21/44
CPC classification number: H01L21/76811 , H01L21/76807 , H01L21/76808 , H01L21/76813 , H01L22/12
Abstract: A method of assessing damage of a dual damascene structure includes obtaining a wafer after the wafer has been processed using a dual damascene process. A first damage-assessment procedure is performed on the wafer using an optical metrology process to gather damage-assessment data for a first set of measurements sites on the wafer. For each measurement site in the first set of measurement sites, the optical metrology process determines an amount of damage of a damaged area of a periodic grating in the measurement site. The damage-assessment data includes the amount of damage determined by the optical metrology process. A first damage-assessment map is created for the dual damascene process. The first damage-assessment includes the damage-assessment data and the locations of the first set of measurement sites on the wafer. One or more values in the damage-assessment map are compared to damage-assessment limits established for the dual damascene process to identify the wafer as a damaged or undamaged wafer.
Abstract translation: 评估双镶嵌结构的损伤的方法包括在使用双镶嵌工艺处理晶片之后获得晶片。 使用光学测量过程在晶片上执行第一损伤评估程序以收集晶片上的第一组测量位置的损伤评估数据。 对于第一组测量点中的每个测量位置，光学测量过程确定测量位置中周期性光栅的损坏区域的损伤量。 损伤评估数据包括由光学计量过程确定的损伤量。 为双镶嵌工艺创建了第一个损伤评估图。 第一次损伤评估包括损伤评估数据和晶片上第一组测量位置的位置。 将损伤评估图中的一个或多个值与为双镶嵌工艺建立的损伤评估限制进行比较，以将晶片识别为损坏或未损坏的晶片。
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公开(公告)号：US20070231930A1
公开(公告)日：2007-10-04
申请号：US11390412
申请日：2006-03-28
Applicant: Merritt Funk , Radha Sundararajan , Daniel Prager , Wesley Natzle
Inventor： Merritt Funk , Radha Sundararajan , Daniel Prager , Wesley Natzle
IPC: H01L21/66
Abstract: A method of monitoring a dual damascene procedure that includes calculating a pre-processing confidence map for a damascene process, the pre-processing confidence map including confidence data for a first set of dies on the wafer. An expanded pre-processing measurement recipe is established for the damascene process when one or more values in the pre-processing confidence map are not within confidence limits established for the damascene process. A reduced pre-processing measurement recipe for the first damascene process is established when one or more values in the pre-processing confidence map are within confidence limits established for the damascene process.
Abstract translation: 一种监测双镶嵌程序的方法，包括计算镶嵌过程的预处理置信度图，所述预处理置信图包括晶片上的第一组模具的置信度数据。 当预处理置信图中的一个或多个值不在为大马士革过程建立的置信限度内时，为镶嵌过程建立扩展的预处理测量配方。 当预处理置信图中的一个或多个值在为大马士革过程建立的置信限度内时，建立了用于第一镶嵌工艺的减少的预处理测量配方。
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Patent Agency Ranking
公开(公告)号：US07113838B2
公开(公告)日：2006-09-26
申请号：US10987194
申请日：2004-11-15
Applicant: Merritt Funk , Masaki Tozawa
Inventor： Merritt Funk , Masaki Tozawa
CPC classification number: H01L21/67276 , G05B19/4065 , G05B2219/37234 , G05B2219/45031 , H01L21/67253
Abstract: A method and system for monitoring tool performance for processing tools in a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules, a number of sensors, and an alarm management system. A tool health control strategy is executed in which tool health data for the processing tool is collected. A tool health analysis strategy is executed in which the tool health data is analyzed. An intervention manager can pause the processing tool when an alarm has occurred. The intervention manager refrains from pausing the processing tool when an alarm has not occurred.
Abstract translation: 一种用于监测半导体处理系统中的加工工具的工具性能的方法和系统。 半导体处理系统包括多个处理工具，多个处理模块，多个传感器和报警管理系统。 执行工具健康控制策略，其中收集用于处理工具的工具健康数据。 执行工具健康分析策略，在其中分析工具健康数据。 发生报警时，干预管理器可以暂停处理工具。 当没有发生警报时，干预管理员不要暂停处理工具。
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公开(公告)号：US20060195218A1
公开(公告)日：2006-08-31
申请号：US11046903
申请日：2005-02-01
Applicant: Asao Yamashita , Merritt Funk , Daniel Prager
Inventor： Asao Yamashita , Merritt Funk , Daniel Prager
IPC: G06F19/00
CPC classification number: H01L22/20 , H01L2924/0002 , H01L2924/00
Abstract: This method includes a method for etch processing that allows the bias between isolated and nested structures/features to be adjusted, correcting for a process wherein the isolated structures/features need to be smaller than the nested structures/features and wherein the nested structures/features need to be reduced relative to the isolated structures/features, while allowing for the critical control of trimming.
Abstract translation: 该方法包括用于蚀刻处理的方法，其允许调整隔离结构/嵌套结构/特征之间的偏置，校正其中隔离结构/特征需要小于嵌套结构/特征的过程，并且其中嵌套结构/特征 需要相对于孤立的结构/特征而减少，同时允许对修剪的关键控制。
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公开(公告)号：US20050171627A1
公开(公告)日：2005-08-04
申请号：US10987194
申请日：2004-11-15
Applicant: Merritt Funk , Masaki Tozawa
Inventor： Merritt Funk , Masaki Tozawa
IPC: H01L21/02 , G05B19/4065 , G06F19/00 , H01L21/00
CPC classification number: H01L21/67276 , G05B19/4065 , G05B2219/37234 , G05B2219/45031 , H01L21/67253
Abstract: A method and system for monitoring tool performance for processing tools in a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules, a number of sensors, and an alarm management system. A tool health control strategy is executed in which tool health data for the processing tool is collected. A tool health analysis strategy is executed in which the tool health data is analyzed. An intervention manager can pause the processing tool when an alarm has occurred. The intervention manager refrains from pausing the processing tool when an alarm has not occurred.
Abstract translation: 一种用于监测半导体处理系统中的加工工具的工具性能的方法和系统。 半导体处理系统包括多个处理工具，多个处理模块，多个传感器和报警管理系统。 执行工具健康控制策略，其中收集用于处理工具的工具健康数据。 执行工具健康分析策略，在其中分析工具健康数据。 发生报警时，干预管理器可以暂停处理工具。 当没有发生警报时，干预管理员不要暂停处理工具。
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公开(公告)号：US20050159911A1
公开(公告)日：2005-07-21
申请号：US11025396
申请日：2004-12-30
Applicant: Merritt Funk , Steven Hartmann
Inventor： Merritt Funk , Steven Hartmann
CPC classification number: G05B19/418 , G05B2219/31334 , G05B2219/32128 , G05B2219/45031 , Y02P90/02 , Y02P90/16 , Y02P90/18 , Y02P90/185 , Y02P90/86
Abstract: Graphical User Interfaces (GUIs) are presented for configuring and setting-up sensors for monitoring tool and process performance in a semiconductor processing system. The semiconductor processing system includes a number of processing tools, a number of processing modules (chambers), and a number of sensors. The graphical display is organized so that all significant parameters are clearly and logically displayed so that the user is able to perform the desired configuration and setup tasks with as little input as possible. The GUI is web-based and is viewable by a user using a web browser.
Abstract translation: 提供图形用户界面（GUI），用于配置和设置传感器，用于在半导体处理系统中监控工具和过程性能。 半导体处理系统包括多个处理工具，多个处理模块（室）和多个传感器。 图形显示被组织，使得所有重要参数都被清楚和逻辑地显示，使得用户能够尽可能少地输入所需的配置和设置任务。 GUI是基于Web的，并且可以由使用web浏览器的用户查看。
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公开(公告)号：US09111727B2
公开(公告)日：2015-08-18
申请号：US13249560
申请日：2011-09-30
Applicant: Jianping Zhao , Lee Chen , Merritt Funk , Toshihiko Iwao , Peter L.G. Ventzek
Inventor： Jianping Zhao , Lee Chen , Merritt Funk , Toshihiko Iwao , Peter L.G. Ventzek
IPC: C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC classification number: H01J37/32256 , H01J37/32247 , H01J37/32935 , H01L22/00
Abstract: The invention provides a plurality of resonator subsystems. The resonator subsystems can comprise one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator subsystem can be coupled to a process chamber using one or more interface subsystems and can comprise one or more resonant cavities, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM-energy from one or more of the resonant cavities to the process space within the process chamber.
Abstract translation: 本发明提供了多个谐振器子系统。 谐振器子系统可以包括一个或多个谐振腔，其被配置为通过在与等离子体相邻的谐振腔中产生谐振微波能量将所期望的EM波模式中的电磁（EM）能量耦合到等离子体。 谐振器子系统可以使用一个或多个接口子系统耦合到处理室，并且可以包括一个或多个谐振腔，并且每个谐振腔可以具有耦合到其上的多个等离子体调谐棒。 一些等离子体调谐杆可被配置成将EM能量从一个或多个谐振腔耦合到处理室内的处理空间。
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