Signal processing semiconductor integrated circuit device

    公开(公告)号:US07095999B2

    公开(公告)日:2006-08-22

    申请号:US10289331

    申请日:2002-11-07

    IPC分类号: H04B1/28

    摘要: A semiconductor integrated circuit comprising a first circuit block including an oscillation circuit considered to be a noise generator and a second circuit block including circuits considered to be easily affected by a noise generated by the oscillation circuit, being most likely led to a malfunction are created on a single semiconductor substrate with the first and second circuit blocks separated from each other. To put it more concretely, the first and second circuit blocks are respectively created in a first island area and a second island area on the surface of the semiconductor substrate. The first and second island areas are each enclosed by an insulating isolation band. A low-resistance semiconductor area is created in a base area excluding locations occupied by active elements in the first and second island areas and is connected to a stable voltage terminal.

    Signal processing semiconductor integrated circuit device
    24.
    发明授权
    Signal processing semiconductor integrated circuit device 失效
    信号处理半导体集成电路器件

    公开(公告)号:US06501330B2

    公开(公告)日:2002-12-31

    申请号:US10087820

    申请日:2002-03-05

    IPC分类号: H01L2500

    摘要: A semiconductor integrated circuit comprising a first circuit block including an oscillation circuit considered to be a noise generator and a second circuit block including circuits considered to be easily affected by a noise generated by the oscillation circuit, being most likely led to a malfunction are created on a single semiconductor substrate with the first and second circuit blocks separated from each other. To put it more concretely, the first and second circuit blocks are respectively created in a first island area and a second island area on the surface of the semiconductor substrate. The first and second island areas are each enclosed by an insulating isolation band. A low-resistance semiconductor area is created in a base area excluding locations occupied by active elements in the first and second island areas and is connected to a stable voltage terminal.

    摘要翻译: 一种半导体集成电路,包括包括被认为是噪声发生器的振荡电路的第一电路块和包括被认为容易受到由振荡电路产生的噪声影响的电路的第二电路块,最可能导致故障 具有彼此分离的第一和第二电路块的单个半导体衬底。 更具体地说,第一和第二电路块分别在半导体衬底的表面上的第一岛区和第二岛区中产生。 第一和第二岛区均由绝缘隔离带包围。 在基区域中产生低电阻半导体区域,不包括在第一岛区域和第二岛区域中的有源元件占据的位置,并且连接到稳定的电压端子。

    ATTENUATING ANTENNA SWITCH AND COMMUNICATION DEVICE
    26.
    发明申请
    ATTENUATING ANTENNA SWITCH AND COMMUNICATION DEVICE 有权
    衰减天线开关和通信设备

    公开(公告)号:US20130072134A1

    公开(公告)日:2013-03-21

    申请号:US13610237

    申请日:2012-09-11

    CPC分类号: H04B1/109 Y02D70/00

    摘要: An attenuating antenna switch may be used to suppress increase in the scale and power consumption of an RFIC. The antenna switch has a first terminal, a second terminal, and an antenna terminal coupled to the first and second terminals and configured to be connected to an antenna. The first switch switches between a first state in which a high frequency signal is propagated between the first terminal and the antenna terminal, and a second state in which the high frequency signal is interrupted. A second switch switches between the first and second states between the second terminal and the antenna terminal. The first and second switches are controlled in a mutually exclusive manner such that only one of the two switches can be in the first state at any given time. When in the first state, each switch adjusts an attenuation amount of the high frequency signal.

    摘要翻译: 可以使用衰减天线开关来抑制RFIC的规模和功耗的增加。 天线开关具有耦合到第一和第二端子并被配置为连接到天线的第一端子,第二端子和天线端子。 第一开关在高频信号在第一端子和天线端子之间传播的第一状态和高频信号被中断的第二状态之间切换。 第二开关在第二端子和天线端子之间的第一和第二状态之间切换。 第一和第二开关以相互排斥的方式进行控制,使得两个开关中只有一个可以在任何给定时间处于第一状态。 当处于第一状态时,每个开关调节高频信号的衰减量。

    Direct conversion receiver
    27.
    发明授权
    Direct conversion receiver 有权
    直接转换接收机

    公开(公告)号:US07856218B2

    公开(公告)日:2010-12-21

    申请号:US11725475

    申请日:2007-03-20

    IPC分类号: H04B1/10

    CPC分类号: H04B1/30 H03G3/3052

    摘要: In a direct conversion receiver, to cancel a DC offset generated in the baseband processing block, negative feedback arrangements comprising a gain control amplifier and a low-pass filter are respectively attached to the I and Q signal branches of the baseband block following mixer outputs. The gain control amplifier in each negative feedback circuit is gain adjusted so that the product G·B of the gain G of a primary gain control amplifier and its own gain B will be constant and thereby the DC offset is cancelled. This DC offset cancellation can be applied in a continuous receiving system with no intermittent time during a receiving operation. Capacitance elements located off-chip can be reduced to those to be used only in the low-pass filters in the negative feedback circuits, whereas many off-chip capacitance elements have been required to be inserted between each stage of gain control amplifiers in conventional baseband chains.

    摘要翻译: 在直接转换接收机中,为了消除在基带处理块中产生的DC偏移,包括增益控制放大器和低通滤波器的负反馈装置分别附加到混频器输出之后的基带块的I和Q信号分支。 每个负反馈电路中的增益控制放大器被增益调整,使得主增益控制放大器的增益G的乘积G·B和其自身的增益B将恒定,从而DC偏移被消除。 该DC偏移消除可以应用于在接收操作期间没有间歇时间的连续接收系统中。 位于片外的电容元件可以减少到仅在负反馈电路中的低通滤波器中使用的电容元件,而许多芯片外电容元件需要插入到常规基带中的增益控制放大器的每个级之间 链条

    Direct-conversion transmitter circuit and transceiver system

    公开(公告)号:US20070142080A1

    公开(公告)日:2007-06-21

    申请号:US11703166

    申请日:2007-02-07

    IPC分类号: H04B1/44 H04M1/00

    CPC分类号: H03D3/007 H03C3/40 H04B1/30

    摘要: Disclosed is a direct conversion type transmitter or transceiver circuit suitable for a mobile communication device which corresponds to broad signal output level variable width to be required by W-CDMA, which does not necessitate any high-performance low noise VCO and RF filter, capable of reducing a number of components and the cost. In the input portion of an orthogonal modulator composed of a divider, mixers, and a common load, there are provided variable attenuators. If an input signal level of the orthogonal modulator within the transmitter circuit lowers, this variable attenuator circuit is operated so as to lower the bias of the orthogonal modulator to reduce the amount of occurrence of carrier leak, and to prevent the signal during low output level and carrier leak ratio from being deteriorated. The direct conversion transmitter circuit is capable of easily realizing output level variable width of 70 dB or higher and reducing a variable amount in the high frequency circuit in which it is difficult to secure the variable gain width.