公开(公告)号：US20200059618A1

公开(公告)日：2020-02-20

申请号：US16103257

申请日：2018-08-14

Applicant: OmniVision Technologies, Inc.

Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Vincent Venezia ,  Dyson Tai ,  Lindsay Grant

IPC: H04N5/369 ,  H01L27/146

Abstract: An image sensor pixel array comprises a center region and two parallel edge regions, wherein the center region is between the two parallel edge regions. The center region comprises a plurality of image pixels disposed along first sub-array of rows and columns, wherein each of the plurality of image pixels comprises a first micro-lens (ML) formed at an offset position above a first light receiving element as a countermeasure for shortening of exit pupil distance of the image pixel in the center region, and each of the two parallel edge regions comprises a plurality of phase detection auto-focus (PDAF) pixels disposed along second sub-array of rows and columns, wherein each of the plurality of PDAF pixels comprises a second micro-lens (ML) formed at an alignment position above a second light receiving element; and at least one of the PDAF pixels is located at a distance away from center of the edge region to receive incident light along an injection tilt angle.

公开(公告)号：US10566380B2

公开(公告)日：2020-02-18

申请号：US15786874

申请日：2017-10-18

Applicant: OmniVision Technologies, Inc.

Inventor： Young Woo Jung ,  Lindsay Grant ,  Dyson Tai ,  Vincent Venezia ,  Wei Zheng

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge. A floating diffusion is disposed proximate to the plurality of photodiodes to receive the image charge from the plurality of photodiodes. A plurality of transfer transistors is coupled to transfer the image charge from the plurality of photodiodes into the floating diffusion in response to a voltage applied to the gate terminal of the plurality of transfer transistors. A first trench isolation structure extends from a frontside of the semiconductor material into the semiconductor material and surrounds the plurality of photodiodes. A second trench isolation structure extends from a backside of the semiconductor material into the semiconductor material. The second trench isolation structure is disposed between individual photodiodes in the plurality of photodiodes.

公开(公告)号：US10411063B2

公开(公告)日：2019-09-10

申请号：US15628304

申请日：2017-06-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Oray Orkun Cellek ,  Duli Mao ,  Xianfu Cheng ,  Xin Wang ,  Bill Phan ,  Dyson Tai

IPC: H01L27/00 ,  H01L27/148 ,  H01L27/146 ,  H04N5/378 ,  H04N5/355 ,  H04N5/3745

Abstract: A single-exposure high dynamic range (HDR) image sensor includes a first photodiode and a second photodiode, with a smaller full-well capacity than the first photodiode, disposed in a semiconductor material. The image sensor also includes a first floating diffusion disposed in the semiconductor material and a first transfer gate coupled to the first photodiode to transfer first image charge accumulated in the first photodiode into the first floating diffusion. A second floating diffusion is disposed in the semiconductor material and a second transfer gate is coupled to the second photodiode to transfer second image charge accumulated in the second photodiode into the second floating diffusion. An attenuation layer is disposed between the second photodiode and image light directed towards the single-exposure HDR image sensor to block a portion of the image light from reaching the second photodiode.

公开(公告)号：US20190165016A1

公开(公告)日：2019-05-30

申请号：US15828217

申请日：2017-11-30

Applicant: OmniVision Technologies, Inc.

Inventor： Kazufumi Watanabe ,  Young Woo Jung ,  Chih-Wei Hsiung ,  Dyson Tai ,  Lindsay Grant

IPC: H01L27/146 ,  H04N5/3745 ,  H01L29/10

Abstract: An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a floating diffusion disposed in the semiconductor material proximate to the photodiode. A transfer transistor is coupled to the photodiode to transfer the image charge from the photodiode into the floating diffusion in response to a transfer signal applied to a transfer gate of the transfer transistor. A source follower transistor is coupled to the floating diffusion to amplify a charge on the floating diffusion. The source follower transistor includes a gate electrode including a semiconductor material having a first dopant type; a source electrode, having a second dopant type, disposed in the semiconductor material; a drain electrode, having the second dopant type, disposed in the semiconductor material; and a channel, having the second dopant type, disposed between the source electrode and the drain electrode.

公开(公告)号：US20190109169A1

公开(公告)日：2019-04-11

申请号：US16150135

申请日：2018-10-02

Applicant: OmniVision Technologies, Inc.

Inventor： Xin Wang ,  Dajiang Yang ,  Siguang Ma ,  Keiji Mabuchi ,  Bill Phan ,  Duli Mao ,  Dyson Tai

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374

Abstract: An image sensor includes a photodiode disposed in a first semiconductor material to absorb photons incident on the image sensor and generate image charge. A floating diffusion is disposed in the first semiconductor material and positioned to receive the image charge from the photodiode, and a transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge out of the photodiode into floating diffusion in response to a transfer signal. A source follower transistor with a gate terminal is coupled to the floating diffusion to output an amplified signal of the image charge in the floating diffusion. The gate terminal includes a second semiconductor material in contact with the floating diffusion, and a gate oxide is partially disposed between the second semiconductor material and the first semiconductor material. The second semiconductor material extends beyond the lateral bounds of the floating diffusion.

公开(公告)号：US10128299B1

公开(公告)日：2018-11-13

申请号：US15728893

申请日：2017-10-10

Applicant: OmniVision Technologies, Inc.

Inventor： Xin Wang ,  Dajiang Yang ,  Siguang Ma ,  Keiji Mabuchi ,  Bill Phan ,  Duli Mao ,  Dyson Tai

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/374

Abstract: An image sensor includes a photodiode disposed in a first semiconductor material to absorb photons incident on the image sensor and generate image charge. A floating diffusion is disposed in the first semiconductor material and positioned to receive the image charge from the photodiode, and a transfer transistor is coupled between the photodiode and the floating diffusion to transfer the image charge out of the photodiode into floating diffusion in response to a transfer signal. A source follower transistor with a gate terminal is coupled to the floating diffusion to output an amplified signal of the image charge in the floating diffusion. The gate terminal includes a second semiconductor material in contact with the floating diffusion, and a gate oxide is partially disposed between the second semiconductor material and the first semiconductor material. The second semiconductor material extends beyond the lateral bounds of the floating diffusion.

公开(公告)号：US20180286895A1

公开(公告)日：2018-10-04

申请号：US15478085

申请日：2017-04-03

Applicant: OmniVision Technologies, Inc.

Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Dyson Tai ,  Lindsay Grant

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14683 ,  H04N5/378 ,  H04N9/045

Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.

公开(公告)号：US09773829B2

公开(公告)日：2017-09-26

申请号：US15014787

申请日：2016-02-03

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson Tai

IPC: H01L27/14 ,  H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/1469

Abstract: A method of image sensor fabrication includes providing a semiconductor material, an insulation layer, and a logic layer, where the semiconductor material includes a plurality of photodiodes. A through-semiconductor-via is formed which extends from the semiconductor material, through the insulation layer, and into the logic layer. The through-semiconductor-via is capped with a capping layer. A metal pad is disposed in a first trench in the semiconductor material. Insulating material is deposited on the capping layer, and in the first trench in the semiconductor material. A resist is deposited in a second trench in the insulating material, and the second trench in the insulating material is aligned with the metal pad. The insulating material is removed to expose the capping layer, and a portion of the capping layer disposed proximate to the plurality of photodiodes is also removed. A metal grid is formed proximate to the plurality of photodiodes.

公开(公告)号：US09484373B1

公开(公告)日：2016-11-01

申请号：US14944772

申请日：2015-11-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Yuanwei Zheng ,  Duli Mao ,  Dyson Tai

IPC: H01L31/18 ,  H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor includes a semiconductor material with a photodiode disposed in the semiconductor material, and a transfer gate disposed adjacent to an edge of the photodiode. A dielectric layer is also disposed between the semiconductor material and the transfer gate. A hard mask is disposed in an encapsulation layer and lateral bounds of the hard mask are coextensive with lateral bounds of the transfer gate. A first contact trench extends through the encapsulation layer and through the dielectric layer and contacts the semiconductor material. A second contact trench extends through the encapsulation layer and through the hard mask and contacts the transfer gate.

Abstract translation: 图像传感器包括具有设置在半导体材料中的光电二极管的半导体材料和邻近光电二极管的边缘设置的传输门。 电介质层也设置在半导体材料和传输门之间。 硬掩模设置在封装层中，硬掩模的横向边界与传输门的横向边界共同延伸。 第一接触沟槽延伸穿过封装层并穿过电介质层并接触半导体材料。 第二接触沟槽延伸穿过封装层并穿过硬掩模并接触传输门。