公开(公告)号：US09054007B2

公开(公告)日：2015-06-09

申请号：US13968210

申请日：2013-08-15

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sing-Chung Hu ,  Rongsheng Yang ,  Gang Chen ,  Howard E. Rhodes ,  Sohei Manabe ,  Hsin-Chih Tai

IPC: H01L27/146 ,  H01L27/092

CPC classification number: H01L27/14643 ,  H01L27/0928 ,  H01L27/14601 ,  H01L27/1463 ,  H01L27/1464

Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is disposed in the first region and coupled between the photodiode and the floating diffusion to selectively transfer image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure lined with a dielectric layer inside the DTI structure is disposed in the semiconductor material isolates the first region on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. Doped semiconductor material inside the DTI structure is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.

Abstract translation: 像素单元包括设置在半导体材料的第一区域中的外延层中的光电二极管。 浮置扩散部设置在设置在第一区域的外延层中的阱区域中。 传输晶体管设置在第一区域中并且耦合在光电二极管和浮动扩散之间以选择性地将图像电荷从光电二极管转移到浮动扩散。 在DTI结构内部布置有介电层的深沟槽隔离（DTI）结构设置在半导体材料中，将DTI结构的一侧上的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离开 。 响应于传输晶体管选择性地将图像电荷从光电二极管转移到浮动扩散，DTI结构内部的掺杂半导体材料选择性地耦合到读出脉冲电压。

公开(公告)号：US09041072B2

公开(公告)日：2015-05-26

申请号：US14333767

申请日：2014-07-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/148 ,  H01L31/18 ,  H01L27/146

CPC classification number: H01L27/14812 ,  H01L27/14614 ,  H01L27/14689 ,  H01L27/14806 ,  H01L31/18

Abstract: A pixel cell includes a photodiode, a storage transistor, a transfer transistor and an output transistor disposed in a semiconductor substrate. The transfer transistor selectively transfers image charge accumulated in the photodiode from the photodiode to the storage transistor. The output transistor selectively transfers the image charge from the storage transistor to a readout node. A first isolation fence is disposed over the semiconductor substrate separating a transfer gate of the transfer transistor from a storage gate of the storage transistor. A second isolation fence is disposed over the semiconductor substrate separating the storage gate from an output gate of the output transistor. Thicknesses of the first and second isolation fences are substantially equal to spacing distances between the transfer gate and the storage gate, and between the storage gate and the output gate, respectively.

Abstract translation: 像素单元包括设置在半导体衬底中的光电二极管，存储晶体管，传输晶体管和输出晶体管。 转移晶体管将从光电二极管累积的图像电荷选择性地转移到存储晶体管。 输出晶体管将图像电荷从存储晶体管选择性地传输到读出节点。 第一隔离栅栏设置在半导体衬底上，用于将转移晶体管的转移栅极与存储晶体管的存储栅极分开。 第二隔离栅栏设置在半导体衬底上，以将存储栅极与输出晶体管的输出栅极分离。 第一和第二隔离栅栏的厚度分别基本上等于传输栅极和存储栅极之间以及存储栅极和输出栅极之间的间隔距离。

公开(公告)号：US20150048427A1

公开(公告)日：2015-02-19

申请号：US13968210

申请日：2013-08-15

Applicant: Omnivision Technologies, Inc.

Inventor： Sing-Chung Hu ,  Rongsheng Yang ,  Gang Chen ,  Howard E. Rhodes ,  Sohei Manabe ,  Hsin-Chih Tai

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/0928 ,  H01L27/14601 ,  H01L27/1463 ,  H01L27/1464

Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is disposed in the first region and coupled between the photodiode and the floating diffusion to selectively transfer image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure lined with a dielectric layer inside the DTI structure is disposed in the semiconductor material isolates the first region on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. Doped semiconductor material inside the DTI structure is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.

Abstract translation: 像素单元包括设置在半导体材料的第一区域中的外延层中的光电二极管。 浮置扩散部设置在设置在第一区域的外延层中的阱区域中。 传输晶体管设置在第一区域中并且耦合在光电二极管和浮动扩散之间以选择性地将图像电荷从光电二极管转移到浮动扩散。 在DTI结构内部布置有介电层的深沟槽隔离（DTI）结构设置在半导体材料中，将DTI结构的一侧上的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离开 。 响应于传输晶体管选择性地将图像电荷从光电二极管转移到浮动扩散，DTI结构内部的掺杂半导体材料选择性地耦合到读出脉冲电压。

公开(公告)号：US20140306360A1

公开(公告)日：2014-10-16

申请号：US13860859

申请日：2013-04-11

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jin Li ,  Gang Chen ,  Yin Qian ,  Hsin-Chih Tai

IPC: G02B3/00 ,  B05D1/00 ,  B29D11/00

CPC classification number: G02B3/0018 ,  B05D1/005 ,  B29D11/00365 ,  B29D11/00384 ,  B29D11/00451 ,  G02B3/0043

Abstract: A method of forming microlenses for an image sensor having at least one large-area pixel and at least one small-area pixel is disclosed. The method includes forming a uniform layer of microlens material on a light incident side of the image sensor over the large-area pixel and over the small-area pixel. The method also includes forming the layer of microlens material into a first block disposed over the large-area pixel and into a second block disposed over the small-area pixel. A void is also formed in the second block to reduce a volume of microlens material included in the second block. The first and second blocks are then reflowed to form a respective first microlens and second microlens. The first microlens has substantially the same effective focal length as the second microlens.

Abstract translation: 公开了一种形成具有至少一个大面积像素和至少一个小面积像素的图像传感器的微透镜的方法。 该方法包括在大面积像素上和小区域像素上的图像传感器的光入射侧上形成均匀的微透镜材料层。 该方法还包括将微透镜材料层形成为设置在大面积像素上的第一块和设置在小面积像素上的第二块。 在第二块中还形成空隙，以减少包含在第二块中的微透镜材料的体积。 然后将第一和第二块回流以形成相应的第一微透镜和第二微透镜。 第一微透镜具有与第二微透镜基本上相同的有效焦距。

公开(公告)号：US20140210028A1

公开(公告)日：2014-07-31

申请号：US13754465

申请日：2013-01-30

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

IPC: H01L27/146 ,  G02B5/20

CPC classification number: G02B5/201 ,  G02B1/105 ,  G02B1/14 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685

Abstract: Embodiments of an apparatus including a color filter arrangement formed on a substrate having a pixel array formed therein. The color filter arrangement includes a clear filter having a first clear hard mask layer and a second clear hard mask layer formed thereon, a first color filter having the first clear hard mask layer and the second hard mask layer formed thereon, a second color filter having the first clear hard mask layer formed thereon, and a third color filter having no clear hard mask layer formed thereon. Other embodiments are disclosed and claimed.

Abstract translation: 包括形成在其上形成有像素阵列的基板上的滤色器装置的装置的实施例。 滤色器装置包括具有形成在其上的第一透明硬掩模层和第二透明硬掩模层的透明滤光器，具有形成在其上的第一透明硬掩模层和第二硬掩模层的第一滤色器，具有第二透明硬掩模层的第二滤色器， 形成在其上的第一透明硬掩模层和形成有透明硬掩模层的第三滤色器。 公开和要求保护其他实施例。

公开(公告)号：US08759934B2

公开(公告)日：2014-06-24

申请号：US13649953

申请日：2012-10-11

Applicant: Omnivision Technologies, Inc.

Inventor： Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

IPC: H01L21/00

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638

Abstract: An image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident through a first side of the image sensor to collect an image charge. The stress adjusting layer is disposed over the first side of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.

Abstract translation: 图像传感器包括设置在半导体层内的感光区域和应力调整层。 感光区域对于通过图像传感器的第一侧入射的光敏感，以收集图像电荷。 应力调整层设置在半导体层的第一侧上，以建立鼓励光电荷载流子向光敏区迁移的应力特性。

公开(公告)号：US20130032921A1

公开(公告)日：2013-02-07

申请号：US13649953

申请日：2012-10-11

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hsin-Chih Tai ,  Howard E. Rhodes ,  Wei Zheng ,  Vincent Venezia ,  Yin Qian ,  Duli Mao

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14638

Abstract: An image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident through a first side of the image sensor to collect an image charge. The stress adjusting layer is disposed over the first side of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.

Abstract translation: 图像传感器包括设置在半导体层内的感光区域和应力调整层。 感光区域对于通过图像传感器的第一侧入射的光敏感，以收集图像电荷。 应力调整层设置在半导体层的第一侧上，以建立鼓励光电荷载流子向光敏区迁移的应力特性。

公开(公告)号：US08969775B2

公开(公告)日：2015-03-03

申请号：US13781388

申请日：2013-02-28

Applicant: Omnivision Technologies, Inc.

Inventor： Gang Chen ,  Zhiqiang Lin ,  Sing-Chung Hu ,  Duli Mao ,  Hsin-Chih Tai

IPC: H01L27/00 ,  H04N5/335

CPC classification number: H04N5/335 ,  H04N5/2355 ,  H04N5/3559 ,  H04N5/3745 ,  H04N5/37452

Abstract: A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.

Abstract translation: 用于高动态范围图像传感器的像素单元包括设置在半导体材料中的光电二极管，以响应入射到光电二极管上的光来积累电荷。 传输晶体管设置在半导体材料中并且耦合在浮动扩散和光电二极管之间。 第一放大器晶体管设置在半导体材料中，其栅极端子耦合到浮动扩散部分，源极端子被耦合以产生像素单元的第一输出信号。 第二放大器晶体管设置在具有耦合到浮动扩散的栅极端子的半导体材料中，以及耦合以产生像素单元的第二输出信号的源极端子。

公开(公告)号：US20140299956A1

公开(公告)日：2014-10-09

申请号：US13856993

申请日：2013-04-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chih-Wei Hsiung ,  Oray Orkun Cellek ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai

IPC: H01L31/0216 ,  H01L27/146

CPC classification number: H01L31/02161 ,  H01L27/1462 ,  H01L27/1464

Abstract: An imaging device includes a semiconductor substrate having a photosensitive element for accumulating charge in response to incident image light. The semiconductor substrate includes a light-receiving surface positioned to receive the image light. The imaging device also includes a negative charge layer and a charge sinking layer. The negative charge layer is disposed proximate to the light-receiving surface of the semiconductor substrate to induce holes in an accumulation zone in the semiconductor substrate along the light-receiving surface. The charge sinking layer is disposed proximate to the negative charge layer and is configured to conserve or increase an amount of negative charge in the negative charge layer. The negative charge layer is disposed between the semiconductor substrate and the charge sinking layer.

Abstract translation: 成像装置包括具有用于响应于入射图像光累积电荷的光敏元件的半导体衬底。 半导体衬底包括被定位成接收图像光的光接收表面。 成像装置还包括负电荷层和电荷沉没层。 负电荷层设置在半导体衬底的光接收表面附近以沿着光接收表面在半导体衬底中的累积区域中引起空穴。 电荷沉降层设置成靠近负电荷层，并且被配置为在负电荷层中保存或增加负电荷的量。 负电荷层设置在半导体衬底和电荷沉降层之间。

公开(公告)号：US20140239351A1

公开(公告)日：2014-08-28

申请号：US13777197

申请日：2013-02-26

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Howard E. Rhodes

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14643

Abstract: Embodiments of a process including depositing a sacrificial layer on the surface of a substrate over a photosensitive region, over the top surface of a transfer gate, and over at least the sidewall of the transfer gate closest to the photosensitive region, the sacrificial layer having a selected thickness. A layer of photoresist is deposited over the sacrificial layer, which is patterned and etched to expose the surface of the substrate over the photosensitive region and at least part of the transfer gate top surface, leaving a sacrificial spacer on the sidewall of the transfer gate closest to the photosensitive region. The substrate is plasma doped to form a pinning layer between the photosensitive region and the surface of the substrate. The spacing between the pinning layer and the sidewall of the transfer gate substantially corresponds to a thickness of the sacrificial spacer. Other embodiments are disclosed and claimed.

Abstract translation: 一种方法的实施方案包括在光敏区域上方的基底表面上沉积牺牲层，在转移栅极的顶表面上，以及至少最靠近光敏区域的转移栅极的侧壁上，牺牲层具有 选择厚度。 在牺牲层上沉积一层光致抗蚀剂，其被图案化和蚀刻以在基片的表面上在感光区域和至少部分传输栅极顶表面上露出基底表面，在传输门的侧壁上留下牺牲隔离物 到感光区域。 衬底是等离子体掺杂的，以在光敏区域和衬底的表面之间形成钉扎层。 钉扎层和转移门的侧壁之间的间隔基本上对应于牺牲间隔物的厚度。 公开和要求保护其他实施例。