公开(公告)号：US20220021824A1

公开(公告)日：2022-01-20

申请号：US17487955

申请日：2021-09-28

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YUTAKA ABE ,  KAZUKO NISHIMURA ,  MASASHI MURAKAMI

IPC: H04N5/353 ,  H04N5/363 ,  H04N5/357

Abstract: An imaging device includes a photoelectric converter that converts light into signal charge, a charge accumulation region that accumulates the signal charge, a first transistor having a gate connected to the charge accumulation region, and a common gate amplifier circuit that amplifies an output of the first transistor to output to the charge accumulation region. The common gate amplifier circuit includes a second transistor. One of a source and a drain of the second transistor is connected to one of a source and a drain of the first transistor, and the other of the source and the drain of the second transistor is connected to the charge accumulation region.

公开(公告)号：US20210143218A1

公开(公告)日：2021-05-13

申请号：US17154011

申请日：2021-01-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIAKI SATOU ,  YOSHIHIRO SATO ,  MASASHI MURAKAMI

IPC: H01L27/30 ,  H01L27/146 ,  H01L23/522

Abstract: An imaging device includes a semiconductor substrate, a first pixel that performs photoelectric conversion, and a first shield. The first pixel includes a first diffusion region that is present in the semiconductor substrate, a first wiring line connected to the first diffusion region, a first transistor, and a first voltage line that makes up at least part of a voltage supply path to a drain or a source of the first transistor. A first signal charge obtained by photoelectric conversion performed by the first pixel flows through the first wiring line. The first signal charge flows into a gate of the first transistor via the first wiring line. Voltages that are different from each other are applied to the first voltage line. A distance between the first voltage line and the first shield is smaller than a distance between the first voltage line and the first wiring line.

公开(公告)号：US20190238767A1

公开(公告)日：2019-08-01

申请号：US16377855

申请日：2019-04-08

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： YOSHIAKI SATOU ,  SHOTA YAMADA ,  MASASHI MURAKAMI ,  YUTAKA HIROSE

IPC: H04N5/361 ,  H01L27/146 ,  H04N5/369

CPC classification number: H04N5/361 ,  H01L27/146 ,  H01L27/14612 ,  H01L27/14643 ,  H04N5/359 ,  H04N5/369 ,  H04N5/374

Abstract: An imaging device includes a semiconductor substrate that includes a first impurity region having n-type conductivity; a photoelectric converter that is electrically connected to the first impurity region and that converts light into charges; a capacitor that includes a first terminal and a second terminal, the first terminal being electrically connected to the first impurity region; and a voltage supply circuit electrically connected to the second terminal. The voltage supply circuit is configured to generate a first voltage and a second voltage different from the first voltage. The first impurity region accumulates positive charges generated by the photoelectric converter.

公开(公告)号：US20180227510A1

公开(公告)日：2018-08-09

申请号：US15873190

申请日：2018-01-17

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SHINICHI MACHIDA ,  MASASHI MURAKAMI ,  TAKEYOSHI TOKUHARA ,  MASAAKI YANAGIDA ,  SANSHIRO SHISHIDO ,  MANABU NAKATA ,  MASUMI IZUCHI

IPC: H04N5/33 ,  H04N5/378 ,  H01L27/30

CPC classification number: H04N5/332 ,  H01L27/307 ,  H04N5/374 ,  H04N5/378 ,  H04N9/04553 ,  Y02E10/549

Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.

公开(公告)号：US20170272677A1

公开(公告)日：2017-09-21

申请号：US15451567

申请日：2017-03-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SANSHIRO SHISHIDO ,  MASASHI MURAKAMI

IPC: H04N5/374 ,  H04N5/378 ,  H01L27/148 ,  H04N5/369

CPC classification number: H04N5/3742 ,  G01N21/6408 ,  H01L27/148 ,  H04N5/363 ,  H04N5/3696 ,  H04N5/378

Abstract: An imaging device includes first and second pixel cells. The first and second pixel cells each include: a photoelectric converter that generates charge; a first charge transfer channel that has a first end electrically connected to the photoelectric converter, and a second end, the charge transfer channel transferring the charge in a direction from the first end toward the second end; a second charge transfer channel that branches from a position of the charge transfer channel, the second charge transfer channel transferring at least a part of the charge; and a charge accumulator that accumulates charge transferred via the second charge transfer channel. Distances from the first end to the position in the direction of the first and second pixel cells are different from each other.

公开(公告)号：US20170264840A1

公开(公告)日：2017-09-14

申请号：US15446545

申请日：2017-03-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： JUNJI HIRASE ,  YOSHIHIRO SATO ,  YOSHINORI TAKAMI ,  MASAYUKI TAKASE ,  MASASHI MURAKAMI

IPC: H04N5/361 ,  H04N5/369 ,  H04N5/3745 ,  H01L27/146

CPC classification number: H04N5/361 ,  H01L27/14612 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/359 ,  H04N5/363 ,  H04N5/3698 ,  H04N5/3745

Abstract: An imaging device includes a semiconductor layer and a pixel cell. The pixel cell includes an impurity region of a first conductivity type, the impurity region located in the semiconductor layer, a photoelectric converter electrically connected to the impurity region and located above the semiconductor layer, a first transistor having a first gate, a first source and a first drain, one of the first source and the first drain electrically connected to the impurity region, a second transistor having a second gate of a second conductivity type different from the first conductivity type, a second source and a second drain, the second transistor including the impurity region as one of the second source and the second drain, the second gate electrically connected to the impurity region, and a third transistor having a third gate, a third source and a third drain, the third gate electrically connected to the photoelectric converter.

公开(公告)号：US20170221947A1

公开(公告)日：2017-08-03

申请号：US15408593

申请日：2017-01-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SANSHIRO SHISHIDO ,  MASASHI MURAKAMI ,  KAZUKO NISHIMURA

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/355 ,  H04N5/374

CPC classification number: H01L27/14612 ,  H01L27/14609 ,  H01L27/14627 ,  H01L27/14643 ,  H04N5/355 ,  H04N5/35563 ,  H04N5/374 ,  H04N5/378

Abstract: In one general aspect, the techniques disclosed here feature an imaging device that includes: a semiconductor substrate; a first pixel cell including a first photoelectric converter in the semiconductor substrate, and a first capacitive element one end of which is electrically connected to the first photoelectric converter; and a second pixel cell including a second photoelectric converter in the semiconductor substrate. An area of the second photoelectric converter is larger than an area of the first photoelectric converter in a plan view.

公开(公告)号：US20160190187A1

公开(公告)日：2016-06-30

申请号：US14965687

申请日：2015-12-10

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： KAZUKO NISHIMURA ,  YUTAKA ABE ,  MASASHI MURAKAMI ,  YOSHIYUKI MATSUNAGA

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H04N5/3575 ,  H04N5/363 ,  H04N5/378

Abstract: An imaging device comprising a unit pixel cell comprising: a photoelectric converter that generates an electric signal through photoelectric conversion of incident light; and a signal detection circuit that detects the electric signal, the signal detection circuit comprising a first transistor that amplifies the electric signal, a second transistor that selectively transmits output of the first transistor to outside of the unit pixel cell, and a feedback circuit that forms a feedback loop through which the electric signal is negatively fed back, the feedback loop not passing through the first transistor.

Abstract translation: 一种成像装置，包括：单位像素单元，包括：光电转换器，其通过入射光的光电转换产生电信号; 以及检测电信号的信号检测电路，所述信号检测电路包括放大所述电信号的第一晶体管，选择性地将所述第一晶体管的输出传输到所述单位像素单元的外部的第二晶体管，以及形成 反馈回路，电信号被负反馈通过，反馈回路不通过第一晶体管。