公开(公告)号：US10033343B2

公开(公告)日：2018-07-24

申请号：US14231103

申请日：2014-03-31

Applicant: QUALCOMM Incorporated

Inventor： Aleksandar Miodrag Tasic ,  Chiewcharn Narathong ,  Gurkanwal Singh Sahota ,  Shrenik Patel

IPC: H03G3/30 ,  H04B1/00 ,  H04B1/10

Abstract: A device includes a reconfigurable receiver front end having variable gain and variable bandwidth configured to tune to a plurality of communication channels in a communication band, the reconfigurable receiver front end responsive to a signal power level.

公开(公告)号：US09385901B2

公开(公告)日：2016-07-05

申请号：US14540900

申请日：2014-11-13

Applicant: QUALCOMM Incorporated

Inventor： Gireesh Rajendran ,  Gurkanwal Singh Sahota ,  Rakesh Kumar

IPC: H03F3/04 ,  H04L27/26 ,  H04L27/00 ,  H04L5/00 ,  H03F1/26 ,  H03F1/22 ,  H03F3/68 ,  H03F3/72 ,  H03F1/30 ,  H03F1/32

CPC classification number: H04L27/0002 ,  H03F1/223 ,  H03F1/26 ,  H03F1/301 ,  H03F1/3205 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/294 ,  H03F2200/492 ,  H03F2200/541 ,  H03F2203/7209 ,  H04B1/006 ,  H04L5/0042 ,  H04L27/2649

Abstract: A receiver front end architecture for intra band carrier aggregation is disclosed. In an exemplary embodiment, an apparatus includes a first transistor having a gate terminal to receive an input signal, drain terminal to output an amplified signal, and a source terminal connected to a signal ground by a source degeneration inductor. The apparatus also includes a second transistor having a source terminal connected to the drain terminal of the first transistor and a drain terminal connected to a first load. The apparatus also includes a third transistor having a gate terminal connected to the drain terminal of the first transistor, a drain terminal connected to a second load and a source terminal connected to a signal ground.

Abstract translation: 公开了用于带内载波聚合的接收机前端架构。 在示例性实施例中，一种装置包括：第一晶体管，其具有用于接收输入信号的栅极端子，用于输出放大信号的漏极端子以及由源极退化电感器连接到信号地的源极端子。 该装置还包括具有连接到第一晶体管的漏极端子的源极端子和连接到第一负载的漏极端子的第二晶体管。 该装置还包括具有连接到第一晶体管的漏极端的栅极端子的第三晶体管，连接到第二负载的漏极端子和连接到信号地的源极端子。

公开(公告)号：US09131634B2

公开(公告)日：2015-09-08

申请号：US13677054

申请日：2012-11-14

Applicant: QUALCOMM Incorporated

Inventor： Aristotele Hadjichristos ,  Gurkanwal Singh Sahota ,  Steven C Ciccarelli ,  David J Wilding ,  Ryan D Lane ,  Christian Holenstein ,  Milind P Shah

IPC: H04B5/00 ,  H05K3/36 ,  H04B1/40 ,  H05K13/04 ,  H01L23/66 ,  H01L25/16

CPC classification number: H05K3/368 ,  H01L23/66 ,  H01L25/16 ,  H01L2224/1403 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/17181 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/15321 ,  H04B1/40 ,  H05K13/0465 ,  Y10T29/49126 ,  Y10T29/5317 ,  H01L2924/00

Abstract: A radio frequency package on package (PoP) circuit is described. The radio frequency package on package (PoP) circuit includes a first radio frequency package. The first radio frequency package includes radio frequency components. The radio frequency package on package (PoP) circuit also includes a second radio frequency package. The second radio frequency package includes radio frequency components. The first radio frequency package and the second radio frequency package are in a vertical configuration. The radio frequency components on the first radio frequency package are designed to reduce the effects of ground inductance.

Abstract translation: 描述了封装（PoP）电路上的射频封装。 封装（PoP）电路上的射频封装包括第一射频封装。 第一个射频包包括射频分量。 封装（PoP）电路上的射频封装还包括第二个射频封装。 第二个射频包包括射频分量。 第一射频包和第二射频包处于垂直配置。 第一个射频封装上的射频分量被设计为减少接地电感的影响。