公开(公告)号：US12002513B2

公开(公告)日：2024-06-04

申请号：US17567401

申请日：2022-01-03

Applicant: Rambus Inc.

Inventor： Gary B. Bronner ,  Brent Steven Haukness ,  Mark A. Horowitz ,  Mark D. Kellam ,  Fariborz Assaderaghi

IPC: G11C16/06 ,  G11C13/00 ,  G11C16/26 ,  G11C7/04 ,  H01L21/324

CPC classification number: G11C16/06 ,  G11C13/0002 ,  G11C13/0033 ,  G11C13/0035 ,  G11C16/26 ,  G11C7/04 ,  H01L21/324

Abstract: Control logic within a memory control component outputs first and second memory read commands to a memory module at respective times, the memory module having memory components disposed thereon. Interface circuitry within the memory control component receives first read data concurrently from a first plurality of the memory components via a first plurality of data paths, respectively, in response to the first memory read command, and receives second read data concurrently from a second plurality of the memory components via a second plurality of data paths, respectively, in response to the second memory read command, the first plurality of the memory components including at least one memory component not included in the second plurality of the memory components and vice-versa.

公开(公告)号：US20230333989A1

公开(公告)日：2023-10-19

申请号：US18139220

申请日：2023-04-25

Applicant: Rambus Inc.

Inventor： Evan Lawrence Erickson ,  Christopher Haywood ,  Mark D. Kellam

IPC: G06F12/1009 ,  G06F13/16 ,  G06F12/0804 ,  G06F12/123 ,  G06F12/0882

CPC classification number: G06F12/1009 ,  G06F13/1668 ,  G06F12/0804 ,  G06F12/123 ,  G06F12/0882 ,  G06F2212/7201

Abstract: Memory pages are background-relocated from a low-latency local operating memory of a server computer to a higher-latency memory installation that enables high-resolution access monitoring and thus access-demand differentiation among the relocated memory pages. Higher access-demand memory pages are background-restored to the low-latency operating memory, while lower access-demand pages are maintained in the higher latency memory installation and yet-lower access-demand pages are optionally moved to yet higher-latency memory installation.

公开(公告)号：US20230139848A1

公开(公告)日：2023-05-04

申请号：US17967029

申请日：2022-10-17

Applicant: Rambus Inc.

Inventor： Mark D. Kellam ,  Carl W. Werner

IPC: H04B10/40 ,  H04B10/532

Abstract: A photonic communication system in which a host communicates bidirectionally with a target via a single optical fiber using light of the same wavelength and from the same light source. Signals flowing in opposite directions are discriminated based on polarity. Using the same fiber and light source in both directions reduces cost, complexity, and power consumption.

公开(公告)号：US20220179799A1

公开(公告)日：2022-06-09

申请号：US17543449

申请日：2021-12-06

Applicant: Rambus Inc.

Inventor： Evan Lawrence Erickson ,  Christopher Haywood ,  Mark D. Kellam

IPC: G06F12/1009 ,  G06F12/0882 ,  G06F12/0804 ,  G06F12/123 ,  G06F13/16

Abstract: Memory pages are background-relocated from a low-latency local operating memory of a server computer to a higher-latency memory installation that enables high-resolution access monitoring and thus access-demand differentiation among the relocated memory pages. Higher access-demand memory pages are background-restored to the low-latency operating memory, while lower access-demand pages are maintained in the higher latency memory installation and yet-lower access-demand pages are optionally moved to yet higher-latency memory installation.

公开(公告)号：US20220130745A1

公开(公告)日：2022-04-28

申请号：US17499712

申请日：2021-10-12

Applicant: Rambus Inc.

Inventor： Mark D. Kellam ,  John Eric Linstadt

IPC: H01L23/498

Abstract: The embodiments are directed to technologies for variable pitch vertical interconnect design for scalable escape routing in semiconductor devices. One semiconductor device includes a circuit die, and an array of circuit die interconnects located on the circuit die. The array includes a first triangular octant of interconnects that are organized in rows and columns, each column incrementing its number of interconnects from a first side of the first triangular octant to a second side of the first triangular octant. A pitch size between the columns increases in a first repeating pattern from the first side to the second side.