摘要:
A pressure gauge may be coupled to a vessel into which a liquid chemical is to be dispensed. The volume of the vessel may be known and a control device may determine an initial pressure of the vessel using the pressure gauge. A volume of liquid chemical may be dispensed into the vessel which may cause the pressure within the vessel to increase to a second pressure. The control device may determine the second pressure using the pressure gauge may calculate the volume of liquid chemical dispensed into the vessel using the volume of the vessel, the initial pressure of the vessel, and the second pressure of the vessel.
摘要:
A pressure gauge may be coupled to a vessel into which a liquid chemical is to be dispensed. The volume of the vessel may be known and a control device may determine an initial pressure of the vessel using the pressure gauge. A volume of liquid chemical may be dispensed into the vessel which may cause the pressure within the vessel to increase to a second pressure. The control device may determine the second pressure using the pressure gauge may calculate the volume of liquid chemical dispensed into the vessel using the volume of the vessel, the initial pressure of the vessel, and the second pressure of the vessel.
摘要:
In embodiments of the current invention, methods of combinatorial processing and a test chip for use in these methods are described. These methods and test chips enable the efficient development of materials, processes, and process sequence integration schemes for semiconductor manufacturing processes. In general, the methods simplify the processing sequence of forming devices or partially formed devices on a test chip such that the devices can be tested immediately after formation. The immediate testing allows for the high throughput testing of varied materials, processes, or process sequences on the test chip. The test chip has multiple site isolated regions where each of the regions is varied from one another and the test chip is designed to enable high throughput testing of the different regions.
摘要:
A pressure gauge may be coupled to a supply line which carries liquid from a bottle to either one or more mixing vessels and/or one or more reactors in a combinatorial processing tool. A control device may monitor the pressure measured by the pressure gauge, and the control device may be configured to change the pressure supplied to the bottle based on a comparison of the measured pressure to a predetermined pressure value. The control device may adjust the pressure provided to the bottle using a pressure regulator coupled to the pressure source. By changing the pressure provided to the bottle, the control device may maintain a relatively constant flow rate of fluids from the liquid source into one or more mixing vessels and/or the one or more reactors.
摘要:
In embodiments of the current invention, methods of combinatorial processing and a test chip for use in these methods are described. These methods and test chips enable the efficient development of materials, processes, and process sequence integration schemes for semiconductor manufacturing processes. In general, the methods simplify the processing sequence of forming devices or partially formed devices on a test chip such that the devices can be tested immediately after formation. The immediate testing allows for the high throughput testing of varied materials, processes, or process sequences on the test chip. The test chip has multiple site isolated regions where each of the regions is varied from one another and the test chip is designed to enable high throughput testing of the different regions.
摘要:
A method for analyzing and optimizing fabrication techniques using variations of materials, unit processes, and process sequences is provided. In the method, a subset of a semiconductor manufacturing process sequence and build is analyzed for optimization. During the execution of the subset of the manufacturing process sequence, the materials, unit processes, and process sequence for creating a certain structure is varied. During the combinatorial processing, the materials, unit processes, or process sequence is varied between the discrete regions of a semiconductor substrate, wherein within each of the regions the process yields a substantially uniform or consistent result that is representative of a result of a commercial manufacturing operation. A tool for optimizing a process sequence is also provided.
摘要:
A method for analyzing and optimizing fabrication techniques using variations of materials, unit processes, and process sequences is provided. In the method, a subset of a semiconductor manufacturing process sequence and build is analyzed for optimization. During the execution of the subset of the manufacturing process sequence, the materials, unit processes, and process sequence for creating a certain structure is varied. During the combinatorial processing, the materials, unit processes, or process sequence is varied between the discrete regions of a semiconductor substrate, wherein within each of the regions the process yields a substantially uniform or consistent result that is representative of a result of a commercial manufacturing operation. A tool for optimizing a process sequence is also provided.
摘要:
A method for fabricating a plurality of shallow-junction metal oxide semiconductor field-effect transistors (MOSFETs) on a selected area of a silicon wafer, in the case in which the MOSFETs are spaced from one another by substantially transparent isolation elements. The method includes the step of flooding the entire selected area with laser radiation that is intended to effect the heating to a desired threshold temperature of only the selected depth of a surface layer of silicon that has been previously amorphized to this selected depth and then doped. This threshold temperature is sufficient to melt amorphized silicon but is insufficient to melt crystalline silicon. However, should the laser radiation be directly incident on both the substantially transparent isolation elements and the silicon surface, a variable portion of the energy of the incident radiation traveling through the substantially transparent isolation elements would be transferred to the silicon surfaces in contact with the isolation elements depending on the depth of the isolation elements thereby causing unpredictable additional heating of the silicon which would result in an unwanted shift in the fluence required to reach the melt threshold temperature in those silicon regions which reach the melt threshold temperature. To prevent this, a top layer stack of a dielectric and a highly radiation-absorbent material (e.g., silicon dioxide and tantalum nitride) is deposited over the selected area prior to the flooding of the entire selected area with laser radiation taking place. After, the melted silicon has cooled and recrystallized, the top layer of highly radiation-absorbent material is stripped.
摘要:
A pressure gauge may be coupled to a supply line which carries liquid from a bottle to either one or more mixing vessels and/or one or more reactors in a combinatorial processing tool. A control device may monitor the pressure measured by the pressure gauge, and the control device may be configured to change the pressure supplied to the bottle based on a comparison of the measured pressure to a predetermined pressure value. The control device may adjust the pressure provided to the bottle using a pressure regulator coupled to the pressure source. By changing the pressure provided to the bottle, the control device may maintain a relatively constant flow rate of fluids from the liquid source into one or more mixing vessels and/or the one or more reactors.
摘要:
A combinatorial processing system having modular dispense heads is provided. The modular dispense heads are disposed on a rail system enabling an adjustable pitch of the modular dispense heads for the combinatorial processing. The modular dispense heads are configured so that sections of the modular dispense heads are detachable in order to accommodate various processes through a first section without having to completely disconnect and re-connect facilities to a second section.