MAINTENANCE SYSTEM AND CLEANING SYSTEM HAVING THE SAME
    21.
    发明申请
    MAINTENANCE SYSTEM AND CLEANING SYSTEM HAVING THE SAME 审中-公开
    维护系统和清洁系统

    公开(公告)号:US20130305481A1

    公开(公告)日:2013-11-21

    申请号:US13886609

    申请日:2013-05-03

    CPC classification number: A47L9/106 A47L5/38 A47L11/33 A47L2201/024

    Abstract: A maintenance system and a cleaning system having the same, the maintenance system including a maintenance station provided at indoors to mount a robot cleaner having a first dust container thereon, a suction port to suck dust of the first dust container, and a dust removing apparatus connected to the suction port while being disposed at outdoors, so that the cleaning performance is maintained regardless of existence of dust in the dust container of the robot cleaner while enhancing the spatial efficiency at indoors.

    Abstract translation: 一种维护系统和具有该维护系统的清洁系统,所述维护系统包括在室内设置的维修站,以安装具有第一集尘容器的机器人清洁器,吸入第一灰尘容器的灰尘的吸入口和除尘装置 在设置在室外时连接到吸入口,从而在机器人清洁器的灰尘容器内存在灰尘的同时保持清洁性能,同时提高室内的空间效率。

    AUTONOMOUS CLEANING MACHINE
    22.
    发明申请
    AUTONOMOUS CLEANING MACHINE 有权
    自动清洗机

    公开(公告)号:US20130232703A1

    公开(公告)日:2013-09-12

    申请号:US13869220

    申请日:2013-04-24

    Abstract: Disclosed herein is an autonomous cleaning machine with a brush cleaning unit to clean a brush unit. The autonomous cleaning machine includes a main body, the brush unit rotatably provided on the main body, first brush cleaning members contacting the brush unit to move foreign substances wound on the brush unit in a lengthwise direction of the brush unit, and second brush cleaning members contacting the brush unit to remove the foreign substances wound on the brush unit from the brush unit.

    Abstract translation: 这里公开了一种具有清洁刷子单元的刷子清洁单元的自动清洁机。 自动清洁机包括:主体,可旋转地设置在主体上的刷子单元,与刷单元接触的第一刷清洁构件,以沿着刷单元的长度方向移动缠绕在刷单元上的异物,以及第二刷清洁构件 接触刷子单元以从刷子单元去除卷绕在刷子单元上的异物。

    SEMICONDUCTOR DEVICE
    23.
    发明申请

    公开(公告)号:US20190312032A1

    公开(公告)日:2019-10-10

    申请号:US16372534

    申请日:2019-04-02

    Abstract: A semiconductor device is provided, which includes a first and second multichannel active patterns spaced apart from one another and extending in a first direction. The semiconductor device also includes first and second gate structures on the first and second multichannel active patterns, extending in a second direction and including first and second gate insulating films, respectively. Sidewalls of the first multichannel active pattern include first portions in contact with the first gate insulating film, second portions not in contact with the first gate insulating film, third portions in contact with the second gate insulating film, and fourth portions not in contact with the second gate insulating film. Additionally, a height of the first portions of the first multichannel active pattern is greater than a height of the third portions of the first multichannel active pattern.

    SEMICONDUCTOR DEVICE
    24.
    发明申请

    公开(公告)号:US20190139955A1

    公开(公告)日:2019-05-09

    申请号:US15971483

    申请日:2018-05-04

    Abstract: A semiconductor device includes a substrate, a fin structure protruding from the substrate in a direction perpendicular to an upper surface of the substrate, the fin structure including first fin regions extending in a first direction and second fin regions extending in a second direction different from the first direction, source/drain regions disposed on the fin structure, a gate structure intersecting the fin structure, a first contact connected to one of the source/drain regions, and a second contact connected to the gate structure and being between the second fin regions in plan view.

    CLEANING APPARATUS
    27.
    发明申请
    CLEANING APPARATUS 有权
    清洁装置

    公开(公告)号:US20130227801A1

    公开(公告)日:2013-09-05

    申请号:US13865621

    申请日:2013-04-18

    CPC classification number: A47L11/24 A47L7/02 A47L9/106 A47L2201/00

    Abstract: A cleaning apparatus including a main body, a dust collection unit detachably installed on the main body and provided with a plurality of inlets, through which foreign substances are introduced into the dust collection unit, and a connection hole, to which an external instrument is connected, a shutter to open and close one inlet, and a cap to open and close the connection hole. The shutter opens and closes the inlet in cooperation with one of whether or not the dust collection unit is attached to or detached from the main body and whether or not the connection hole is opened or closed.

    Abstract translation: 一种清洁装置,包括主体,可拆卸地安装在主体上并具有多个入口的集尘单元,异物被引入到集尘单元中,以及连接孔,外部设备连接到该连接孔 ,用于打开和关闭一个入口的快门,以及用于打开和关闭连接孔的盖。 与灰尘收集单元是否附接到主体或从主体分离,以及连接孔是否打开或关闭中的一个组合,快门打开和关闭入口。

    SEMICONDUCTOR DEVICES
    29.
    发明申请

    公开(公告)号:US20230112528A1

    公开(公告)日:2023-04-13

    申请号:US18046518

    申请日:2022-10-14

    Abstract: Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction different from the first direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.

    SEMICONDUCTOR DEVICE
    30.
    发明申请

    公开(公告)号:US20230019860A1

    公开(公告)日:2023-01-19

    申请号:US17718703

    申请日:2022-04-12

    Abstract: A semiconductor device including a substrate; first and second active patterns on the substrate, extending in a first direction and spaced apart in a second direction; gate electrodes on the first and second active patterns and extending in the second direction; a first gate separation structure between the first and second active patterns, extending in the first direction, and separating the gate electrodes; and a first element separation structure between the gate electrodes, extending in the second direction, and separating the second active pattern, wherein a distance to a first side of a first portion of the first gate separation structure is smaller than a distance to the first side of a second portion of the first gate separation structure, and a distance to the second side of the first portion is smaller than a distance from the second active pattern to the second side of the second portion.

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