公开(公告)号：US09076533B2

公开(公告)日：2015-07-07

申请号：US13803390

申请日：2013-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Jin Kong ,  Avner Dor ,  Moshe Twitto ,  Shay Landis

IPC: G11C16/10 ,  G11C11/56 ,  G11C16/04 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/349

Abstract: A method of operating a memory device includes programming a first data signal to a first memory cell, attempting to program a second data signal to the first memory cell in a state where the first memory cell is not erased, and marking the first memory cell as blank upon failing to program the second data signal to the first memory cell.

Abstract translation: 操作存储器件的方法包括将第一数据信号编程到第一存储器单元，在第一存储器单元未被擦除的状态下尝试将第二数据信号编程到第一存储器单元，并将第一存储单元标记为 在将第二数据信号编程到第一存储器单元时未被编程。

公开(公告)号：US10528466B2

公开(公告)日：2020-01-07

申请号：US16002151

申请日：2018-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Won Lee ,  Dashevsky Shmuel ,  Moshe Twitto ,  Elona Erez ,  Eran Hof ,  Jun-Jin Kong ,  Avner Dor ,  Michael Erlihson

IPC: G06F12/06 ,  G06F12/1009

Abstract: A method of operating a storage device including a nonvolatile memory can be provided by receiving, from a host, address change information including changing logical addresses for data to be stored in the nonvolatile memory. Physical addresses can be sequentially allocated to the changing logical addresses included in the address change information to provide a first journal. A portion of at least one physical address allocated to the changing logical addresses can be removed to provide a second journal and the second journal can be stored in the nonvolatile memory.

公开(公告)号：US20180357164A1

公开(公告)日：2018-12-13

申请号：US16002151

申请日：2018-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Won Lee ,  Dashevsky Shmuel ,  Moshe Twitto ,  Elona Erez ,  Eran Hof ,  Jun-Jin Kong ,  Avner Dor ,  Michael Erlihson

IPC: G06F12/06 ,  G06F12/1009

CPC classification number: G06F12/06 ,  G06F12/0246 ,  G06F12/1009 ,  G06F2212/1008 ,  G06F2212/2022 ,  G06F2212/7201

Abstract: A method of operating a storage device including a nonvolatile memory can be provided by receiving, from a host, address change information including changing logical addresses for data to be stored in the nonvolatile memory. Physical addresses can be sequentially allocated to the changing logical addresses included in the address change information to provide a first journal. A portion of at least one physical address allocated to the changing logical addresses can be removed to provide a second journal and the second journal can be stored in the nonvolatile memory.

公开(公告)号：US09569371B2

公开(公告)日：2017-02-14

申请号：US14626989

申请日：2015-02-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong-Hyeog Choi ,  Jun-Jin Kong ,  Hong-Rak Son ,  Pil-Sang Yoon ,  Chang-Kyu Seol

IPC: H04L29/06 ,  G06F12/14 ,  H04L9/32 ,  G06F11/30

CPC classification number: G06F12/1408 ,  G06F2212/1052 ,  H04L9/3278

Abstract: A memory device, a memory system, and an operating method of the memory system is provided. The operating method includes operations of transmitting an authentication request to a memory device using a memory controller; converting the authentication request to a first address using the memory device; processing authentication data that corresponds to the first address and indicates a physical characteristic of the memory device and transmitting the authentication data as an authentication response to the authentication request to the memory controller using the memory device; and verifying whether the authentication response received from the memory device is an authentication response to the authentication request using the memory controller.

Abstract translation: 提供了存储器件，存储器系统以及存储器系统的操作方法。 操作方法包括使用存储器控制器将认证请求发送到存储器件的操作; 使用所述存储设备将所述认证请求转换为第一地址; 处理与第一地址相对应的认证数据，并指示存储器件的物理特征，并且使用存储器件将认证数据作为认证请求发送给存储器控制器; 以及验证从所述存储器装置接收到的认证响应是否是使用所述存储器控制器对所述认证请求的认证响应。

公开(公告)号：US09268531B1

公开(公告)日：2016-02-23

申请号：US14722751

申请日：2015-05-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seong-Hoon Woo ,  Hak-Sun Kim ,  Seong-Hyeog Choi ,  Jun-Jin Kong ,  Hong-Rak Son ,  Soon-Jae Won ,  Jung-Soo Chung

IPC: G06F7/58 ,  G11C16/04

CPC classification number: G06F7/58 ,  G06F7/588 ,  G11C7/14 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/28

Abstract: A nonvolatile memory device includes a data generating unit for generating a first reference value randomly or pseudo-randomly according to a first program request to program data in a memory cell, a seed selecting unit for selecting at least one of a plurality of seeds using the first reference value, and a randomizer for generating randomized data by using the selected seed. The data generating unit regenerates the first reference value as a second reference value different from the first reference value when a second program request is made, and the seed selecting unit selects another seed using the second reference value.

Abstract translation: 非易失性存储器件包括：数据生成单元，用于根据第一程序请求随机地或随机地生成第一参考值，以对存储单元中的数据进行编程;种子选择单元，用于使用所述种子选择单元选择多个种子中的至少一个; 第一参考值，以及用于通过使用所选种子来生成随机数据的随机化器。 当进行第二程序请求时，数据生成单元将作为与第一参考值不同的第二参考值重新生成第一参考值，并且种子选择单元使用第二参考值选择另一种子。