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    Memory system and method of operating memory system using reconstructed data
    3.
    发明授权
    Memory system and method of operating memory system using reconstructed data 有权
    使用重构数据操作存储器系统的存储器系统和方法

    公开(公告)号：US09098391B2

    公开(公告)日：2015-08-04

    申请号：US14052834

    申请日：2013-10-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyun-Seuk Yoo ,  Jun-Jin Kong ,  Chang-Kyu Seol ,  Hong-Rak Son ,  Young-Geon Yoo

    IPC: G06F12/00 ,  G06F11/10 ,  G11C16/34 ,  G11C11/56 ,  G11C16/16 ,  G11C29/00 ,  G11C16/12 ,  G11C16/10

    CPC classification number: G06F12/00 ,  G06F11/10 ,  G06F11/1048 ,  G11C11/5628 ,  G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/3427 ,  G11C16/3454 ,  G11C29/00 ,  G11C2211/5648

    Abstract: Provided is a method of operating a memory system. The method includes programming first bit data into multiple memory cells; identifying target memory cells that are in a first state and have threshold voltages equal to or greater than a first voltage from the memory cells programmed with the first bit data; receiving second bit data which is to be programmed into the memory cells; calculating multiple third bit data by performing a first process on the second bit data; and selecting third bit data of the calculated multiple third bit data that changes a largest number of target memory cells from the first state to a second state when the memory cells are programmed with each of the multiple third bit data, respectively. The selected third bit data is programmed into the memory cells.

    Abstract translation: 提供了一种操作存储器系统的方法。 该方法包括将第一位数据编程到多个存储器单元中; 识别处于第一状态并且具有等于或大于来自由第一位数据编程的存储器单元的第一电压的阈值电压的目标存储器单元; 接收要编程到存储器单元中的第二位数据; 通过对所述第二位数据执行第一处理来计算多个第三位数据; 以及当所述存储器单元分别被所述多个第三位数据中的每一个编程时，选择将所述最大数目的目标存储单元从所述第一状态改变到第二状态的所计算的多个第三位数据的第三位数据。 所选择的第三位数据被编程到存储器单元中。

    Nonvolatile memory devices and methods of controlling the same
    6.
    发明授权
    Nonvolatile memory devices and methods of controlling the same 有权

    公开(公告)号：US10289561B2

    公开(公告)日：2019-05-14

    申请号：US15671855

    申请日：2017-08-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Elona Erez ,  Avner Dor ,  Jun-Jin Kong

    IPC: G06F12/10 ,  G06F12/1009 ,  G06F3/06

    Abstract: A method of controlling a nonvolatile memory device includes: receiving a plurality of logical pages associated with a plurality of physical addresses, respectively; storing the plurality of logical pages at the plurality of physical addresses in a selected one of a plurality of sub-clusters according to a given order of logical addresses of the logical pages; generating a first table including an entry for each one of the ordered logical addresses identifying a cluster of the selected sub-cluster and an offset into the selected sub-cluster; and generating a second table including an entry for the selected sub-cluster and the cluster indicating one of the ordered logical addresses associated with a first physical page of the selected sub-cluster.

    GROEBNER-BASES APPROACH TO FAST CHASE DECODING OF GENERALIZED REED-SOLOMON CODES
    7.
    发明申请
    GROEBNER-BASES APPROACH TO FAST CHASE DECODING OF GENERALIZED REED-SOLOMON CODES 审中-公开

    公开(公告)号：US20190068319A1

    公开(公告)日：2019-02-28

    申请号：US15683456

    申请日：2017-08-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： YARON SHANY ,  Jun-Jin Kong

    IPC: H04L1/00 ,  H03M13/15

    CPC classification number: H04L1/0043 ,  H03M13/1515 ,  H03M13/153 ,  H03M13/453 ,  H03M13/6502

    Abstract: An application specific integrated circuit (ASIC) tangibly encodes a program of instructions executable by the integrated circuit to perform a method for fast Chase decoding of generalized Reed-Solomon (GRS) codes. The method includes using outputs of a syndrome-based hard-decision (HD) algorithm to find an initial Groebner basis G for a solution module of a key equation, upon failure of HD decoding of a GRS codeword received by the ASIC from a communication channel; traversing a tree of error patterns on a plurality of unreliable coordinates to adjoin a next weak coordinate, where vertices of the tree of error patterns correspond to error patterns, and edges connect a parent error pattern to a child error pattern having exactly one additional non-zero value, to find a Groebner basis for each adjoining error location; and outputting an estimated transmitted codeword when a correct error vector has been found.

    Method of estimating deterioration state of memory device and related method of wear leveling
    8.
    发明授权
    Method of estimating deterioration state of memory device and related method of wear leveling 有权
    估计存储器件劣化状态的方法及相关的磨损均衡方法

    公开(公告)号：US09324420B2

    公开(公告)日：2016-04-26

    申请号：US14446347

    申请日：2014-07-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Beom-Kyu Shin ,  Ung-Hwan Kim ,  Jun-Jin Kong ,  Eun-Cheol Kim ,  Dong-Min Shin ,  Myung-Kyu Lee

    IPC: G11C16/06 ,  G11C11/56 ,  G11C16/34 ,  G11C16/04 ,  G11C16/26 ,  G06F12/00

    CPC classification number: G11C11/5642 ,  G06F12/00 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3495

    Abstract: A method of estimating a deterioration state of a memory device comprises reading data from selected memory cells connected to a selected wordline of a memory cell array by applying to the selected wordline a plurality of distinct read voltages having values corresponding to at least one valley of threshold voltage distributions of the selected memory cells, generating quality estimation information indicating states of the threshold voltage distributions using the data read from the selected memory cells, and determining a deterioration state of a storage area including the selected memory cells based on the generated quality estimation information.

    Abstract translation: 一种估计存储器件劣化状态的方法包括通过向所选择的字线应用具有对应于至少一个阈值谷值的多个不同读取电压来从连接到存储器单元阵列的选定字线的选定存储单元读取数据 选择的存储单元的电压分布，使用从选择的存储单元读取的数据生成指示阈值电压分布的状态的质量估计信息，并且基于生成的质量估计信息来确定包括所选存储单元的存储区域的劣化状态 。

    Memory Device, Memory System, and Operating Method of Memory System
    9.
    发明申请
    Memory Device, Memory System, and Operating Method of Memory System 有权
    存储器件，存储器系统和存储器系统的操作方法

    公开(公告)号：US20150363335A1

    公开(公告)日：2015-12-17

    申请号：US14626989

    申请日：2015-02-20

    Applicant: SAMSUNG ELECTRONICS CO.,LTD.

    Inventor： Seong-Hyeog Choi ,  Jun-Jin Kong ,  Hong-Rak Son ,  Pil-Sang Yoon ,  Chang-Kyu Seol

    IPC: G06F12/14 ,  H04L9/32 ,  H04L9/08

    CPC classification number: G06F12/1408 ,  G06F2212/1052 ,  H04L9/3278

    Abstract: A memory device, a memory system, and an operating method of the memory system is provided. The operating method includes operations of transmitting an authentication request to a memory device using a memory controller; converting the authentication request to a first address using the memory device; processing authentication data that corresponds to the first address and indicates a physical characteristic of the memory device and transmitting the authentication data as an authentication response to the authentication request to the memory controller using the memory device; and verifying whether the authentication response received from the memory device is an authentication response to the authentication request using the memory controller.

    Abstract translation: 提供了存储器件，存储器系统以及存储器系统的操作方法。 操作方法包括使用存储器控制器将认证请求发送到存储器件的操作; 使用所述存储设备将所述认证请求转换为第一地址; 处理与第一地址相对应的认证数据，并指示存储器件的物理特征，并且使用存储器件将认证数据作为认证请求发送给存储器控制器; 以及验证从所述存储器装置接收到的认证响应是否是使用所述存储器控制器对所述认证请求的认证响应。

    Method of determining deterioration state of memory device and memory system using the same
    10.
    发明授权
    Method of determining deterioration state of memory device and memory system using the same 有权
    确定存储器件和使用其的存储器系统的劣化状态的方法

    公开(公告)号：US09164881B2

    公开(公告)日：2015-10-20

    申请号：US14052801

    申请日：2013-10-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chang-Kyu Seol ,  Jun-Jin Kong ,  Hong-Rak Son

    IPC: G06F3/00 ,  G06F13/00 ,  G06F12/00 ,  G06F11/00 ,  G11C29/00 ,  G11C29/50 ,  G06F11/10 ,  G11C16/34 ,  G11C11/56 ,  G06F11/34 ,  G11C16/26 ,  G11C29/04

    CPC classification number: G06F12/00 ,  G06F11/00 ,  G06F11/1048 ,  G06F11/3466 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C16/3418 ,  G11C16/3422 ,  G11C16/3427 ,  G11C16/349 ,  G11C29/00 ,  G11C29/50004 ,  G11C2029/0409

    Abstract: A method is provided for determining a deterioration condition of a memory device. The method includes calculating first information corresponding to a number of bits having a first logic value from data obtained by performing a first read operation on target storage region of the memory device using a first reference voltage as a read voltage, and calculating second information corresponding to a number of bits having a second logic value from data obtained by performing a second read operation on the target storage region using a second reference voltage as the read voltage. A deterioration condition of the target storage region is determined based on the first and second information. The first reference voltage is less than a first read voltage by which an erase state of the memory device is distinguished from an adjacent program state, and the second reference voltage is higher than the first read voltage.

    Abstract translation: 提供了一种用于确定存储器件的劣化状况的方法。 该方法包括：使用第一参考电压作为读取电压，通过对存储器件的目标存储区域执行第一读取操作获得的数据，计算与具有第一逻辑值的位数相对应的第一信息，并且计算对应于 具有来自通过使用第二参考电压作为读取电压对目标存储区域执行第二读取操作获得的数据的第二逻辑值的位数。 基于第一信息和第二信息确定目标存储区域的劣化条件。 第一参考电压小于第一读取电压，通过该第一读取电压将存储器件的擦除状态与相邻的程序状态区分开，并且第二参考电压高于第一读取电压。

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