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公开(公告)号：US09391096B2
公开(公告)日：2016-07-12
申请号：US14154483
申请日：2014-01-14
发明人： Shunpei Yamazaki , Daisuke Matsubayashi , Hideomi Suzawa , Tetsuhiro Tanaka , Hirokazu Watanabe
IPC分类号： H01L29/10 , H01L27/12 , H01L29/49 , H01L29/66 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/1222 , H01L29/4908 , H01L29/66969 , H01L29/78633 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： To provide a highly reliable semiconductor device. The semiconductor device includes a first oxide layer over an insulating film; an oxide semiconductor layer over the first oxide layer; a gate insulating film over the oxide semiconductor layer; and a gate electrode over the gate insulating film. The first oxide layer contains indium. The oxide semiconductor layer contains indium and includes a channel formation region. The distance from the interface to the channel formation region is 20 nm or more, preferably 30 nm or more, further preferably 40 nm or more, still further preferably 60 nm or more.
摘要翻译： 提供高度可靠的半导体器件。 半导体器件包括绝缘膜上的第一氧化物层; 在所述第一氧化物层上的氧化物半导体层; 氧化物半导体层上的栅极绝缘膜; 以及栅极绝缘膜上的栅电极。 第一氧化物层含有铟。 氧化物半导体层含有铟，并且包括沟道形成区域。 从界面到沟道形成区域的距离为20nm以上，优选为30nm以上，进一步优选为40nm以上，进一步优选为60nm以上。
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公开(公告)号：US09306079B2
公开(公告)日：2016-04-05
申请号：US14054110
申请日：2013-10-15
发明人： Shunpei Yamazaki , Hideomi Suzawa
IPC分类号： H01L29/786 , H01L29/26 , H01L29/66 , H01L21/02
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/0262 , H01L21/02631 , H01L21/467 , H01L21/477 , H01L29/247 , H01L29/263 , H01L29/78693 , H01L29/78696
摘要： A semiconductor device formed using an oxide semiconductor layer and having small electrical characteristic variation is provided. A highly reliable semiconductor device including an oxide semiconductor layer and exhibiting stable electric characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. In the semiconductor device, an oxide semiconductor layer is used for a channel formation region, a multilayer film which includes an oxide layer in which the oxide semiconductor layer is wrapped is provided, and an edge of the multilayer film has a curvature in a cross section.
摘要翻译： 提供了使用氧化物半导体层形成且具有小的电特性变化的半导体器件。 提供了包括氧化物半导体层并且表现出稳定的电特性的高度可靠的半导体器件。 此外，提供了一种用于制造半导体器件的方法。 在半导体装置中，使用氧化物半导体层作为沟道形成区域，设置包含氧化物半导体层被包覆的氧化物层的多层膜，多层膜的边缘在截面上具有曲率 。
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公开(公告)号：US09293598B2
公开(公告)日：2016-03-22
申请号：US14141831
申请日：2013-12-27
IPC分类号： H01L29/786 , H01L29/45 , H01L29/49
CPC分类号： H01L29/4908 , H01L27/1225 , H01L29/24 , H01L29/45 , H01L29/7869
摘要： The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced.
摘要翻译： 通过尽可能地抑制晶体管的电特性的变化来提高半导体器件的可靠性。 作为包括氧化物半导体的晶体管的电特性变化的原因，可以给出氧化物半导体中的氢浓度，氧化物半导体中的氧空位密度等。 源电极和漏电极使用容易与氧结合的导电材料形成。 使用在含有氧的气氛下通过溅射法等形成的氧化物层形成沟道形成区域。 因此，可以降低堆叠中的氢浓度，特别是可以降低通道形成区域中的氢浓度。
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公开(公告)号：US20140361293A1
公开(公告)日：2014-12-11
申请号：US14294638
申请日：2014-06-03
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/66969 , H01L29/78648 , H01L29/7869
摘要： To provide a semiconductor device having a structure capable of suppressing deterioration of its electrical characteristics which becomes apparent with miniaturization. The semiconductor device includes a first oxide semiconductor film over an insulating surface; a second oxide semiconductor film over the first oxide semiconductor film; a source electrode and a drain electrode in contact with the second oxide semiconductor film; a third oxide semiconductor film over the second oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the third oxide semiconductor film; and a gate electrode over the gate insulating film. A first interface between the gate electrode and the gate insulating film has a region closer to the insulating surface than a second interface between the first oxide semiconductor film and the second oxide semiconductor film.
摘要翻译： 提供具有能够抑制其电特性劣化的结构的半导体器件，其在小型化时变得明显。 半导体器件包括绝缘表面上的第一氧化物半导体膜; 第一氧化物半导体膜上的第二氧化物半导体膜; 与第二氧化物半导体膜接触的源电极和漏电极; 第二氧化物半导体膜上的第三氧化物半导体膜，源电极和漏电极; 第三氧化物半导体膜上的栅极绝缘膜; 以及栅极绝缘膜上的栅电极。 栅电极和栅极绝缘膜之间的第一界面具有比第一氧化物半导体膜和第二氧化物半导体膜之间的第二界面更接近绝缘表面的区域。
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公开(公告)号：US20140339546A1
公开(公告)日：2014-11-20
申请号：US14278234
申请日：2014-05-15
IPC分类号： H01L29/786
CPC分类号： H01L29/78606 , H01L21/8221 , H01L27/0688 , H01L29/42384 , H01L29/78603 , H01L29/7869 , H01L29/78696
摘要： A structure is employed in which a first protective insulating layer; an oxide semiconductor layer over the first protective insulating layer; a source electrode and a drain electrode that are electrically connected to the oxide semiconductor layer; a gate insulating layer that is over the source electrode and the drain electrode and overlaps with the oxide semiconductor layer; a gate electrode that overlaps with the oxide semiconductor layer with the gate insulating layer provided therebetween; and a second protective insulating layer that covers the source electrode, the drain electrode, and the gate electrode are included. Furthermore, the first protective insulating layer and the second protective insulating layer each include an aluminum oxide film that includes an oxygen-excess region, and are in contact with each other in a region where the source electrode, the drain electrode, and the gate electrode are not provided.
摘要翻译： 采用其中第一保护绝缘层的结构; 在所述第一保护绝缘层上的氧化物半导体层; 与氧化物半导体层电连接的源电极和漏电极; 栅极绝缘层，位于源电极和漏电极之上并与氧化物半导体层重叠; 与所述氧化物半导体层重叠的栅电极，其间设置有所述栅极绝缘层; 并且包括覆盖源电极，漏电极和栅电极的第二保护绝缘层。 此外，第一保护绝缘层和第二保护绝缘层各自包括氧化物膜，该氧化铝膜包括氧过剩区域，并且在源电极，漏电极和栅电极的区域中彼此接触 没有提供
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公开(公告)号：US20140183529A1
公开(公告)日：2014-07-03
申请号：US14141831
申请日：2013-12-27
IPC分类号： H01L29/786
CPC分类号： H01L29/4908 , H01L27/1225 , H01L29/24 , H01L29/45 , H01L29/7869
摘要： The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced.
摘要翻译： 通过尽可能地抑制晶体管的电特性的变化来提高半导体器件的可靠性。 作为包括氧化物半导体的晶体管的电特性变化的原因，可以给出氧化物半导体中的氢浓度，氧化物半导体中的氧空位密度等。 源电极和漏电极使用容易与氧结合的导电材料形成。 使用在含有氧的气氛下通过溅射法等形成的氧化物层形成沟道形成区域。 因此，可以降低堆叠中的氢浓度，特别是可以降低通道形成区域中的氢浓度。
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公开(公告)号：US20140106502A1
公开(公告)日：2014-04-17
申请号：US14047639
申请日：2013-10-07
IPC分类号： H01L29/66
CPC分类号： H01L29/7869 , H01L21/28185 , H01L21/28194 , H01L21/823462 , H01L21/823857 , H01L29/1054 , H01L29/42384 , H01L29/4908 , H01L29/66765 , H01L29/66969 , H01L29/78
摘要： Stable electrical characteristics and high reliability are provided for a miniaturized semiconductor device including an oxide semiconductor, and the semiconductor device is manufactured. The semiconductor device includes a base insulating layer; an oxide stack which is over the base insulating layer and includes an oxide semiconductor layer; a source electrode layer and a drain electrode layer over the oxide stack; a gate insulating layer over the oxide stack, the source electrode layer, and the drain electrode layer; a gate electrode layer over the gate insulating layer; and an interlayer insulating layer over the gate electrode layer. In the semiconductor device, the defect density in the oxide semiconductor layer is reduced.
摘要翻译： 为包括氧化物半导体的小型半导体器件提供稳定的电特性和高可靠性，并且制造半导体器件。 半导体器件包括基极绝缘层; 氧化物堆叠，其在所述基底绝缘层上方并且包括氧化物半导体层; 氧化层上的源电极层和漏电极层; 氧化层上的栅极绝缘层，源电极层和漏电极层; 栅绝缘层上的栅电极层; 以及在栅电极层上的层间绝缘层。 在半导体器件中，氧化物半导体层中的缺陷密度降低。
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公开(公告)号：US20140027762A1
公开(公告)日：2014-01-30
申请号：US13942866
申请日：2013-07-16
发明人： Takuya TSURUME , Hideomi Suzawa
IPC分类号： H01L29/24
CPC分类号： H01L29/24 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device is provided, which includes a first oxide semiconductor layer over a substrate, a second oxide semiconductor layer over and in contact the first oxide semiconductor layer, a source electrode and a drain electrode over the second oxide semiconductor layer, a gate insulating layer over the second oxide semiconductor layer, and a gate electrode over the gate insulating layer. The first oxide semiconductor layer has a step portion. The step portion is thinner than a portion other than the step portion. A surface of the step portion is in contact with the source electrode and the drain electrode.
摘要翻译： 提供一种半导体器件，其包括在衬底上的第一氧化物半导体层，在第一氧化物半导体层上方并与其接触的第二氧化物半导体层，在第二氧化物半导体层上的源电极和漏电极，栅极绝缘层 在第二氧化物半导体层上方，以及在栅极绝缘层上方的栅电极。 第一氧化物半导体层具有台阶部。 台阶部比台阶部以外的部分薄。 台阶部分的表面与源电极和漏电极接触。
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公开(公告)号：US11296231B2
公开(公告)日：2022-04-05
申请号：US16637384
申请日：2018-08-21
发明人： Yuta Endo , Hideomi Suzawa
IPC分类号： H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L27/108
摘要： A semiconductor device that can be highly integrated is provided.
The semiconductor device includes first and second transistors and first and second capacitors. Each of the first and second transistors includes a gate insulator and a gate electrode over an oxide. Each of the first and second capacitors includes a conductor, a dielectric over the conductor, and the oxide. The first and second transistors are provided between the first capacitor and the second capacitor. One of a source and a drain of the first transistor is also used as one of a source and a drain of the second transistor. The other of the source and the drain of the first transistor is also used as one electrode of the first capacitor. The other of the source and the drain of the second transistor is also used as one electrode of the second capacitor. The channel lengths of the first and second transistors are larger than the lengths in a direction parallel to short sides of fourth and fifth conductors.-
公开(公告)号：US11296085B2
公开(公告)日：2022-04-05
申请号：US16645665
申请日：2018-09-05
发明人： Yuta Endo , Hideomi Suzawa
IPC分类号： H01L23/528 , H01L27/00 , H01L29/00 , H01L27/105 , H01L27/02 , H01L29/24 , H01L29/66 , H01L29/786
摘要： A semiconductor device that can be highly integrated is provided. The semiconductor device includes a first transistor, a second transistor, and an electrode. The first transistor and the second transistor include an oxide, a gate insulator over the oxide, and a gate. The electrode is connected to one of a source and a drain of the first transistor and one of a source and a drain of the second transistor. The channel length of the first transistor is longer than the short side of the first conductor. The channel length of the second transistor is longer than the short side of the second conductor.
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