公开(公告)号：US11784259B2

公开(公告)日：2023-10-10

申请号：US17697152

申请日：2022-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiromi Sawai ,  Ryo Tokumaru ,  Toshihiko Takeuchi ,  Tsutomu Murakawa ,  Sho Nagamatsu ,  Tomoaki Moriwaka

IPC: H01L29/00 ,  H01L27/00 ,  H01L29/786 ,  H01L29/04 ,  H01L29/06 ,  H01L29/66 ,  H10B12/00

CPC classification number: H01L29/7869 ,  H01L29/04 ,  H01L29/0665 ,  H01L29/66742 ,  H10B12/05 ,  H10B12/315

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a conductor, a first insulator in contact with a side surface of the conductor, a second insulator in contact with a top surface of the conductor and a top surface of the first insulator, and an oxide over the second insulator. The oxide includes a region that overlaps with the conductor with the second insulator interposed therebetween. The maximum height of a roughness curve (Rz) of the top surface of the conductor is 6.0 nm or smaller. The region includes crystals, and c-axes of the crystals are aligned in the normal direction of the top surface of the conductor.

公开(公告)号：US11742431B2

公开(公告)日：2023-08-29

申请号：US17501061

申请日：2021-10-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yoshinobu Asami ,  Takahisa Ishiyama ,  Motomu Kurata ,  Ryo Tokumaru ,  Noritaka Ishihara ,  Yusuke Nonaka

IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/22 ,  H01L29/66969

Abstract: A semiconductor device with favorable reliability is provided.
The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

公开(公告)号：US11282964B2

公开(公告)日：2022-03-22

申请号：US16760050

申请日：2018-11-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiromi Sawai ,  Ryo Tokumaru ,  Toshihiko Takeuchi ,  Tsutomu Murakawa ,  Sho Nagamatsu ,  Tomoaki Moriwaka

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/108 ,  H01L29/04 ,  H01L29/06 ,  H01L29/66

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a conductor, a first insulator in contact with a side surface of the conductor, a second insulator in contact with a top surface of the conductor and a top surface of the first insulator, and an oxide over the second insulator. The oxide includes a region that overlaps with the conductor with the second insulator interposed therebetween. The maximum height of a roughness curve (Rz) of the top surface of the conductor is 6.0 nm or smaller. The region includes crystals, and c-axes of the crystals are aligned in the normal direction of the top surface of the conductor.

公开(公告)号：US11152513B2

公开(公告)日：2021-10-19

申请号：US16643453

申请日：2018-08-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yoshinobu Asami ,  Takahisa Ishiyama ,  Motomu Kurata ,  Ryo Tokumaru ,  Noritaka Ishihara ,  Yusuke Nonaka

IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66

Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

公开(公告)号：US20200243669A1

公开(公告)日：2020-07-30

申请号：US16778103

申请日：2020-01-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Ryo Tokumaru ,  Yasumasa Yamane ,  Akihisa Shimomura ,  Naoki Okuno

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L29/49 ,  H01L29/45 ,  H01L29/423

Abstract: To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.

公开(公告)号：US10553704B2

公开(公告)日：2020-02-04

申请号：US16038763

申请日：2018-07-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Ryo Tokumaru ,  Yasumasa Yamane ,  Akihisa Shimomura ,  Naoki Okuno

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/786 ,  H01L29/45 ,  H01L29/49

Abstract: To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.

公开(公告)号：US10236357B2

公开(公告)日：2019-03-19

申请号：US15697564

申请日：2017-09-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasumasa Yamane ,  Ryo Tokumaru ,  Hiromi Sawai

IPC: H01L29/49 ,  H01L21/443 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L21/66 ,  H01L23/544 ,  H01L27/105 ,  H01L27/12

Abstract: A semiconductor device having stable electrical characteristics is provided. A semiconductor device that can be miniaturized or highly integrated is provided. One embodiment of the present invention includes a transistor including an oxide, a first barrier layer over the transistor, and a second barrier layer in contact with the first barrier layer. The oxide is in contact with an insulator including an excess-oxygen region. The insulator is in contact with the first barrier layer. The first barrier layer has a thickness greater than or equal to 0.5 nm and less than or equal to 1.5 nm. The second barrier layer is thicker than the first barrier layer.

公开(公告)号：US20180342601A1

公开(公告)日：2018-11-29

申请号：US16038763

申请日：2018-07-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Ryo Tokumaru ,  Yasumasa Yamane ,  Akihisa Shimomura ,  Naoki Okuno

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/49 ,  H01L29/423 ,  H01L29/45

Abstract: To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.

公开(公告)号：US20150179810A1

公开(公告)日：2015-06-25

申请号：US14575052

申请日：2014-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Tetsuhiro Tanaka ,  Masashi Tsubuku ,  Toshihiko Takeuchi ,  Ryo Tokumaru ,  Mitsuhiro Ichijo ,  Satoshi Toriumi ,  Takashi Ohtsuki ,  Toshiya Endo

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes.

Abstract translation: 抑制了电特性的变化，并且提高了使用包括氧化物半导体的晶体管的半导体器件的可靠性。 半导体器件包括绝缘表面上的氧化物半导体膜，绝缘表面上的抗氧化膜和氧化物半导体膜，与抗氧化膜接触的一对电极，一对电极上的栅极绝缘膜，以及栅极 电极，其在栅极绝缘膜上方并与氧化物半导体膜重叠。 在抗氧化剂膜中，与该对电极重叠的区域的宽度比不与该对电极重叠的区域的宽度长。