公开(公告)号：US10020322B2

公开(公告)日：2018-07-10

申请号：US15390894

申请日：2016-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daigo Ito ,  Takahisa Ishiyama ,  Katsuaki Tochibayashi ,  Yoshinori Ando ,  Yasutaka Suzuki ,  Mitsuhiro Ichijo ,  Toshiya Endo ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L29/778 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2224/05 ,  H01L2224/48463

Abstract: A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which includes an oxide semiconductor is provided. The transistor includes a first conductor, a first insulator, a second insulator, a third insulator, a first oxide, an oxide semiconductor, a second conductor, a second oxide, a fourth insulator, a third conductor, a fourth conductor, a fifth insulator, and a sixth insulator. The second conductor is separated from the sixth insulator by the second oxide. The third conductor and the fourth conductor are separated from the sixth insulator by the fifth insulator. The second oxide has a function of suppressing permeation of oxygen as long as oxygen contained in the sixth insulator is sufficiently supplied to the oxide semiconductor through the second oxide. The fifth insulator has a barrier property against oxygen.

公开(公告)号：US09882059B2

公开(公告)日：2018-01-30

申请号：US14571981

申请日：2014-12-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yuhei Sato ,  Yasumasa Yamane ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yutaka Okazaki ,  Naoki Okuno ,  Takahisa Ishiyama

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/78696

Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

公开(公告)号：US09559174B2

公开(公告)日：2017-01-31

申请号：US15068708

申请日：2016-03-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Takahisa Ishiyama ,  Kenichi Okazaki ,  Chiho Kawanabe ,  Masashi Oota ,  Noritaka Ishihara

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/24 ,  C01G15/00 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

Abstract translation: 给半导体器件提供有利的电特性。 此外，提供了具有高可靠性的半导体器件。 本发明的一个实施方案是具有多个电子衍射图案的氧化物半导体膜，其以使得形成氧化物半导体膜的表面被照射电子束，该电子束的半峰宽为 1nm。 多个电子衍射图案包括在不同区域中观察到的50个以上的电子衍射图案，第一电子衍射图案的百分比和第二电子衍射图案的百分比之和占100％，第一电子衍射图案占 90％以上时，第一电子衍射图案包括观察点，其表示c轴在与形成氧化物半导体膜的表面基本垂直的方向上取向。

公开(公告)号：US10797180B2

公开(公告)日：2020-10-06

申请号：US16703175

申请日：2019-12-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daigo Ito ,  Takahisa Ishiyama ,  Katsuaki Tochibayashi ,  Kazuya Hanaoka

IPC: H01L29/786 ,  H01L21/67 ,  H01L27/146 ,  H01L29/04 ,  H01L29/423 ,  H01L29/66 ,  H01L27/12

Abstract: The semiconductor device includes a first insulating layer; a first oxide insulating layer over the first insulating layer; an oxide semiconductor layer over the first oxide insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a second oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a gate insulating layer over the second oxide insulating layer; a gate electrode layer over the gate insulating layer; a second insulating layer over the first insulating layer the source electrode layer, the drain electrode layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer, and a third insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, and the second insulating layer.

公开(公告)号：US10032928B2

公开(公告)日：2018-07-24

申请号：US15417266

申请日：2017-01-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Takahisa Ishiyama ,  Kenichi Okazaki ,  Chiho Kawanabe ,  Masashi Oota ,  Noritaka Ishihara

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04

Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

公开(公告)号：US20150179803A1

公开(公告)日：2015-06-25

申请号：US14571981

申请日：2014-12-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yuhei Sato ,  Yasumasa Yamane ,  Yoshitaka Yamamoto ,  Hideomi Suzawa ,  Tetsuhiro Tanaka ,  Yutaka Okazaki ,  Naoki Okuno ,  Takahisa Ishiyama

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/41733 ,  H01L29/78606 ,  H01L29/78696

Abstract: To provide a transistor having a high on-state current. A semiconductor device includes a first insulator containing excess oxygen, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor which are over the second oxide semiconductor and are separated from each other, a third oxide semiconductor in contact with side surfaces of the first oxide semiconductor, a top surface and side surfaces of the second oxide semiconductor, a top surface of the first conductor, and a top surface of the second conductor, a second insulator over the third oxide semiconductor, and a third conductor facing a top surface and side surfaces of the second oxide semiconductor with the second insulator and the third oxide semiconductor therebetween. The first oxide semiconductor has a higher oxygen-transmitting property than the third oxide semiconductor.

Abstract translation: 提供具有高导通电流的晶体管。 半导体器件包括含有过量氧的第一绝缘体，在第一绝缘体上的第一氧化物半导体，第一氧化物半导体上的第二氧化物半导体，在第二氧化物半导体之上并且彼此分离的第一导体和第二导体 与第一氧化物半导体的侧表面接触的第三氧化物半导体，第二氧化物半导体的顶表面和侧表面，第一导体的顶表面和第二导体的顶表面，第二绝缘体 第三氧化物半导体以及与第二绝缘体和第三氧化物半导体相对的第二氧化物半导体的顶表面和侧表面的第三导体。 第一氧化物半导体具有比第三氧化物半导体更高的透氧性。

公开(公告)号：US11742431B2

公开(公告)日：2023-08-29

申请号：US17501061

申请日：2021-10-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yoshinobu Asami ,  Takahisa Ishiyama ,  Motomu Kurata ,  Ryo Tokumaru ,  Noritaka Ishihara ,  Yusuke Nonaka

IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/22 ,  H01L29/66969

Abstract: A semiconductor device with favorable reliability is provided.
The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

公开(公告)号：US11152513B2

公开(公告)日：2021-10-19

申请号：US16643453

申请日：2018-08-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Yoshinobu Asami ,  Takahisa Ishiyama ,  Motomu Kurata ,  Ryo Tokumaru ,  Noritaka Ishihara ,  Yusuke Nonaka

IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66

Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

公开(公告)号：US09768317B2

公开(公告)日：2017-09-19

申请号：US14961016

申请日：2015-12-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daigo Ito ,  Takahisa Ishiyama ,  Kazuya Hanaoka

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/467 ,  H01L21/02 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L21/02178 ,  H01L21/02266 ,  H01L21/0228 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/467 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

Abstract: Provided is a semiconductor device which can suppress an increase in oxygen vacancies in an oxide semiconductor layer and a manufacturing method of the semiconductor device. The semiconductor device includes a first oxide semiconductor layer over the first insulating layer; a second oxide semiconductor layer over the first oxide semiconductor layer; a third oxide semiconductor layer over the second oxide semiconductor layer; a source electrode layer and a drain electrode layer each over the third oxide semiconductor layer; a fourth semiconductor layer over the source and drain electrode layers, and the third oxide semiconductor layer; a gate insulating layer over the fourth oxide semiconductor layer; a gate electrode layer over the gate electrode layer and overlapping with the source and drain electrode layers, and the fourth oxide semiconductor layer; and a second insulating layer over the first insulating layer, and the source, gate, and drain electrode layers.

公开(公告)号：US09406760B2

公开(公告)日：2016-08-02

申请号：US14626049

申请日：2015-02-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Takahisa Ishiyama ,  Kenichi Okazaki ,  Chiho Kawanabe ,  Masashi Oota ,  Noritaka Ishihara

IPC: H01L21/00 ,  H01L29/24 ,  C01G15/00 ,  H01L27/12

CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

Abstract translation: 给半导体器件提供有利的电特性。 此外，提供了具有高可靠性的半导体器件。 本发明的一个实施方案是具有多个电子衍射图案的氧化物半导体膜，其以使得形成氧化物半导体膜的表面被照射电子束，该电子束的半峰宽为 1nm。 多个电子衍射图案包括在不同区域中观察到的50个以上的电子衍射图案，第一电子衍射图案的百分比和第二电子衍射图案的百分比之和占100％，第一电子衍射图案占 90％以上时，第一电子衍射图案包括观察点，其表示c轴在与形成氧化物半导体膜的表面基本垂直的方向上取向。