-
Patent Agency Ranking
公开(公告)号：US09911898B2
公开(公告)日：2018-03-06
申请号：US15404985
申请日：2017-01-12
Applicant: Seoul Viosys Co., Ltd.
Inventor： Hyo Shik Choi , Jung Hwan Hwang , Chang Suk Han
CPC classification number: H01L33/06 , H01L33/0025 , H01L33/04 , H01L33/14 , H01L33/145 , H01L33/32
Abstract: Disclosed is an ultraviolet light-emitting device. The light-emitting device includes: an n-type contact layer including a GaN layer; a p-type contact layer including an AlGaN or AlInGaN layer; and an active region of multiple quantum well structure positioned between the n-type contact layer and the p-type contact layer. In addition, the active region of multiple quantum well structure includes a GaN or InGaN layer with a thickness less than 2 nm, radiating an ultraviolet ray with a peak wavelength of 340 nm to 360 nm.
-
公开(公告)号：US20170125634A1
公开(公告)日：2017-05-04
申请号：US15404985
申请日：2017-01-12
Applicant: Seoul Viosys Co., Ltd.
Inventor： Hyo Shik Choi , Jung Hwan Hwang , Chang Suk Han
CPC classification number: H01L33/06 , H01L33/0025 , H01L33/04 , H01L33/14 , H01L33/145 , H01L33/32
Abstract: Disclosed is an ultraviolet light-emitting device. The light-emitting device includes: an n-type contact layer including a GaN layer; a p-type contact layer including an AlGaN or AlInGaN layer; and an active region of multiple quantum well structure positioned between the n-type contact layer and the p-type contact layer. In addition, the active region of multiple quantum well structure includes a GaN or InGaN layer with a thickness less than 2 nm, radiating an ultraviolet ray with a peak wavelength of 340 nm to 360 nm.
-
23.发明授权Ultraviolet light emitting device separated from growth substrate and method of fabricating the same 有权与生长衬底分离的紫外线发光器件及其制造方法公开(公告)号：US09520533B2
公开(公告)日：2016-12-13
申请号：US14875578
申请日：2015-10-05
Applicant: Seoul Viosys Co., Ltd.
Inventor： Chang Suk Han , Hwa Mok Kim , Mi So Ko , A Ram Cha Lee , Dae Woong Suh
IPC: H01L33/02 , H01L33/06 , H01L21/02 , H01L33/12 , H01L33/32 , H01L33/00 , H01L33/22 , H01L33/24 , H01L33/20
CPC classification number: H01L33/06 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/0025 , H01L33/0075 , H01L33/0079 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/32
Abstract: A UV light emitting device and a method for fabricating the same are disclosed. The method includes forming a first super-lattice layer including AlxGa(1-x)N on a substrate, forming a sacrificial layer including AlzGa(1-z)N on the first super-lattice layer, partially removing the sacrificial layer, forming an epitaxial layer on the sacrificial layer, and separating the substrate from the epitaxial layer, wherein the sacrificial layer includes voids, the substrate is separated from the epitaxial layer at the sacrificial layer, and forming an epitaxial layer includes forming an n-type semiconductor layer including n-type AluGa(1-u)N (0
Abstract translation: 公开了一种UV发光器件及其制造方法。 该方法包括在衬底上形成包括Al x Ga（1-x）N的第一超晶格层，在第一超晶格层上形成包含AlzGa（1-z）N的牺牲层，部分去除牺牲层，形成 外延层，并且将所述衬底与所述外延层分离，其中所述牺牲层包括空隙，所述衬底在所述牺牲层处与所述外延层分离，并且形成外延层包括形成n型半导体层，所述n型半导体层包括 n型AluGa（1-u）N（0
-
24.发明申请ULTRAVIOLET LIGHT EMITTING DEVICE SEPARATED FROM GROWTH SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权从生长基材分离的超紫外线发光装置及其制造方法公开(公告)号：US20160035935A1
公开(公告)日：2016-02-04
申请号：US14875578
申请日：2015-10-05
Applicant: Seoul Viosys Co., Ltd.
Inventor： Chang Suk Han , Hwa Mok Kim , Mi So Ko , A Ram Cha Lee , Dae Woong Suh
CPC classification number: H01L33/06 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/0025 , H01L33/0075 , H01L33/0079 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/32
Abstract: A UV light emitting device and a method for fabricating the same are disclosed. The method includes forming a first super-lattice layer including AlxGa(1-x)N on a substrate, forming a sacrificial layer including AlzGa(1-z)N on the first super-lattice layer, partially removing the sacrificial layer, forming an epitaxial layer on the sacrificial layer, and separating the substrate from the epitaxial layer, wherein the sacrificial layer includes voids, the substrate is separated from the epitaxial layer at the sacrificial layer, and forming an epitaxial layer includes forming an n-type semiconductor layer including n-type AluGa(1-u)N (0
Abstract translation: 公开了一种UV发光器件及其制造方法。 该方法包括在衬底上形成包括Al x Ga（1-x）N的第一超晶格层，在第一超晶格层上形成包含AlzGa（1-z）N的牺牲层，部分去除牺牲层，形成 外延层，并且将所述衬底与所述外延层分离，其中所述牺牲层包括空隙，所述衬底在所述牺牲层处与所述外延层分离，并且形成外延层包括形成n型半导体层，所述n型半导体层包括 n型AluGa（1-u）N（0 n; z＆nlE; x <1）。 利用这种结构，发光器件可以发射紫外光并与衬底分离。
-
公开(公告)号：US20150144874A1
公开(公告)日：2015-05-28
申请号：US14556033
申请日：2014-11-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ki Yon Park , Jeong Hun Heo , Hwa Mok Kim , Chang Suk Han , Hyo Shik Choi
Abstract: A UV light emitting diode and a method of fabricating the same are provided. The light emitting diode includes an active area between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer, wherein the active area includes a plurality of barrier layers containing Al, a plurality of well layers containing Al and alternately arranged with the barrier layer, and at least one conditioning layer. Each conditioning layer is placed between the well layer and the barrier layer adjacent to the well layer and is formed of a binary nitride semiconductor. The design of the conditioning layer can reduce stress of the active area while allowing uniform control of the composition of the well layers and/or the barrier layers.
Abstract translation: 提供了一种UV发光二极管及其制造方法。 发光二极管包括在n型氮化物基半导体层和p型氮化物基半导体层之间的有源区，其中有源区包括多个含有Al的势垒层，多个阱层含有Al和 交替布置有阻挡层，以及至少一个调理层。 每个调理层位于阱层和与阱层相邻的势垒层之间，并由二元氮化物半导体形成。 调节层的设计可以减少有源区的应力，同时允许均匀地控制阱层和/或阻挡层的组成。
-
-
-
-
Search Results
25
records
(took 0.014 seconds)
