公开(公告)号：US10325787B2

公开(公告)日：2019-06-18

申请号：US14781077

申请日：2014-03-25

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke Hayashi ,  Takashi Ootagaki ,  Yuji Nagashima ,  Akinori Iso

IPC: B05D1/00 ,  B08B3/10 ,  H01L21/02 ,  H01L21/66 ,  H01L21/67 ,  H01L21/306 ,  H01L21/687

Abstract: According to one embodiment, a substrate processing apparatus (1) includes: a support (4) configured to support a substrate (W) in a plane; a rotation mechanism (5) configured to rotate the support (4) about an axis that crosses a surface of the substrate (W) supported by the support (4) as a rotation axis; a plurality of nozzles (6a, 6b, 6c), which are aligned from the center toward the periphery of the substrate (W) supported by the support (4), configured to eject a treatment liquid to the surface of the substrate (W) on the support (4) being rotated by the rotation mechanism (5), and a controller (9) configured to control the nozzles to eject the treatment liquid at different ejection timings according to the thickness of a film of the treatment liquid formed on the surface of the substrate (W) on the support (4) being rotated by the rotation mechanism (5).

公开(公告)号：US10276406B2

公开(公告)日：2019-04-30

申请号：US14212899

申请日：2014-03-14

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke Hayashi ,  Masaaki Furuya ,  Takashi Ootagaki ,  Yuji Nagashima ,  Atsushi Kinase ,  Masahiro Abe

IPC: B08B3/10 ,  H01L21/67

Abstract: A substrate processing device includes a suction drying section drying a surface of a substrate by absorbing and removing a liquid droplet of volatile solvent formed on the surface of the substrate by a heating operation of a heating section.

公开(公告)号：US09972513B2

公开(公告)日：2018-05-15

申请号：US15450542

申请日：2017-03-06

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Yuki Saito ,  Konosuke Hayashi ,  Takashi Ootagaki ,  Yuji Nagashima

IPC: H01L21/00 ,  H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/67017 ,  H01L21/67253

Abstract: According to the embodiment, a substrate treating device 10 for treating a semiconductor wafer W using an etchant L containing hydrofluoric acid and nitric acid includes a storage tank 210 that stores the etchant L; a concentration sensor 256 that measures a concentration of nitrous acid in the etchant L; an alcohol feeding line 280 that feeds IPA to the etchant L and maintains the concentration of nitrous acid to a predetermined value or more; and a substrate treating unit 100 that feeds the etchant L in the storage tank 210 to the semiconductor wafer W. The substrate treating device can improve the etching efficiency by efficiently generating nitrous acid, and thereby producing an etchant having a nitrous acid concentration suitable for etching.

公开(公告)号：US09811096B2

公开(公告)日：2017-11-07

申请号：US14939008

申请日：2015-11-12

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke Hayashi ,  Takashi Ootagaki ,  Emi Matsui

IPC: G05D11/13 ,  B05B12/00 ,  G05D9/12 ,  B05C5/02 ,  H01L21/67 ,  B05B13/02

CPC classification number: G05D11/13 ,  B05B12/006 ,  B05B13/0242 ,  B05C5/02 ,  G05D9/12 ,  H01L21/67017 ,  H01L21/6708

Abstract: A liquid feeding device that feeds a treatment liquid to a treating device and also recovers the treatment liquid for re-feeding, include feeding tanks having an exhaust passage and an overflow line, and can be switched to one of a feeding mode in which the treatment liquid is fed and a standby mode in which the feeding tank is on standby while accommodating the treatment liquid; a feeding mechanism that feeds the treatment liquid to the treating device from the feeding tank in the feeding mode among the plurality of feeding tanks; a recovery mechanism that recovers and returns the treatment liquid excessive in the treatment device to the feeding tank in the feeding mode; and an on-off mechanism provided in each of the plurality of feeding tanks to block the exhaust passage and the overflow line is provided.

公开(公告)号：US09607865B2

公开(公告)日：2017-03-28

申请号：US14212218

申请日：2014-03-14

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke Hayashi ,  Masaaki Furuya ,  Takashi Ootagaki ,  Yuji Nagashima ,  Atsushi Kinase ,  Masahiro Abe

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67051 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6776

Abstract: A substrate processing device 100 includes a cleaning liquid supply unit 114 supplying a cleaning liquid to a surface of a substrate W, a solvent supply unit 115 supplying a volatile solvent to the surface of the substrate W supplied with the cleaning liquid to replace the cleaning liquid on the surface of the substrate W with the volatile solvent, a heating unit 117 heating the substrate W supplied with the volatile solvent, and a drying unit 118 drying the surface of the substrate W by removing a droplet of the volatile solvent produced on the surface of the substrate W by a heating operation of the heating unit 117, and the heating unit 117 and the drying unit 118 are arranged in a course of transportation of the substrate W transported from the solvent supply unit 115.