公开(公告)号：US20180096864A1

公开(公告)日：2018-04-05

申请号：US15720928

申请日：2017-09-29

Applicant: Shibaura Mechatronics Corporation

Inventor： Yuji Nagashima ,  Konosuke Hayashi

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  B08B3/08 ,  B08B5/02 ,  B08B3/02 ,  F26B3/30

CPC classification number: H01L21/67051 ,  B08B3/02 ,  B08B3/08 ,  B08B5/02 ,  F26B3/30 ,  H01L21/02052 ,  H01L21/67115 ,  H01L21/68764

Abstract: According to one embodiment, a substrate processing apparatus includes a processing chamber, a support part, a heater, and an optical member. In the processing chamber, air flows from the top to the bottom. The support part is located in the processing chamber to support a substrate having a surface to be treated. The heater is arranged so as not to be above the support part and emits light for heating. The optical member is arranged in the processing chamber so as not to be above the support part to guide the light emitted by the heater and having passed above the support part to the surface to be treated of the substrate supported by the support part.

公开(公告)号：US09553003B2

公开(公告)日：2017-01-24

申请号：US14212382

申请日：2014-03-14

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke Hayashi ,  Masaaki Furuya ,  Takashi Ootagaki ,  Yuji Nagashima ,  Atsushi Kinase ,  Masahiro Abe

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/6704 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67115

Abstract: In a substrate processing device 10 having a heating and drying unit 103 for drying a surface of a substrate W, the heating and drying unit 103 heats upward a vertically downward surface of the substrate W to dry the surface of the substrate by dropping and removing, by gravity, the droplets of the volatile solvent formed on the surface of the substrate W by the heating operation.

Abstract translation: 在具有用于干燥基板W的表面的加热和干燥单元103的基板处理装置10中，加热和干燥单元103向上加热基板W的垂直向下的表面，以通过掉落和去除来干燥基板的表面， 通过重力，通过加热操作形成在基板W的表面上的挥发性溶剂的液滴。

公开(公告)号：US10281210B2

公开(公告)日：2019-05-07

申请号：US14773055

申请日：2014-02-28

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Kunihiro Miyazaki ,  Konosuke Hayashi ,  Takashi Ootagaki ,  Yuji Nagashima

IPC: F26B3/30 ,  F26B7/00 ,  F26B11/18 ,  F26B3/28 ,  H01L21/02 ,  H01L21/67 ,  F26B5/00

Abstract: According to one embodiment, a substrate processing apparatus (1) includes a table (4) configured to support a substrate W, a solvent supply unit (8) configured to supply a volatile solvent to a surface of the substrate W on the table (4), and an irradiator (10) configured to emit light to the substrate W, which has been supplied with the volatile solvent, and function as a heater that heats the substrate W such that a gas layer is formed on the surface of the substrate W to make the volatile solvent into a liquid ball. Thus, it is possible to dry the substrate successfully as well as to suppress pattern collapse.

公开(公告)号：US09966282B2

公开(公告)日：2018-05-08

申请号：US14867458

申请日：2015-09-28

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Kunihiro Miyazaki ,  Kenji Minami ,  Yuji Nagashima ,  Konosuke Hayashi

IPC: H01L21/02 ,  H01L21/67 ,  G03F7/42 ,  H01L21/311

CPC classification number: H01L21/6708 ,  G03F7/423 ,  H01L21/31133

Abstract: According to one embodiment, a substrate processing apparatus includes a first liquid supplier, a second liquid supplier, and a controller. The first liquid supplier supplies a substrate with a sulfuric acid solution having a first temperature equal to or higher than the boiling point of hydrogen peroxide water. The second liquid supplier supplies a surface to be treated of the substrate with a mixture of sulfuric acid solution and hydrogen peroxide water having a second temperature lower than the first temperature. The controller controls the first liquid supplier to supply the sulfuric acid solution so as to heat the substrate to the boiling point of hydrogen peroxide water or higher. When the temperature of the substrate becomes equal to or higher than the second temperature, the controller controls the first liquid supplier to stop supplying the sulfuric acid solution and controls the second liquid supplier to supply the mixture.

公开(公告)号：US10406566B2

公开(公告)日：2019-09-10

申请号：US15608554

申请日：2017-05-30

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Jun Matsushita ,  Yuji Nagashima ,  Konosuke Hayashi ,  Kunihiro Miyazaki

IPC: B08B3/08 ,  H01L21/67 ,  B08B3/02

Abstract: A substrate processing device 10 has a water removing unit 110 and, when a solvent supply unit 58 supplies a volatile solvent to a surface of a substrate W, the water removing unit 110 supplies a water removing agent to the surface of the substrate W to promote replacement of the cleaning water on the surface of the substrate W with the volatile solvent.

公开(公告)号：US10460961B2

公开(公告)日：2019-10-29

申请号：US15720928

申请日：2017-09-29

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Yuji Nagashima ,  Konosuke Hayashi

IPC: H01L21/67 ,  B08B3/02 ,  B08B3/08 ,  B08B5/02 ,  F26B3/30 ,  H01L21/02 ,  H01L21/687

Abstract: According to one embodiment, a substrate processing apparatus includes a processing chamber, a support part, a heater, and an optical member. In the processing chamber, air flows from the top to the bottom. The support part is located in the processing chamber to support a substrate having a surface to be treated. The heater is arranged so as not to be above the support part and emits light for heating. The optical member is arranged in the processing chamber so as not to be above the support part to guide the light emitted by the heater and having passed above the support part to the surface to be treated of the substrate supported by the support part.

公开(公告)号：US10325787B2

公开(公告)日：2019-06-18

申请号：US14781077

申请日：2014-03-25

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke Hayashi ,  Takashi Ootagaki ,  Yuji Nagashima ,  Akinori Iso

IPC: B05D1/00 ,  B08B3/10 ,  H01L21/02 ,  H01L21/66 ,  H01L21/67 ,  H01L21/306 ,  H01L21/687

Abstract: According to one embodiment, a substrate processing apparatus (1) includes: a support (4) configured to support a substrate (W) in a plane; a rotation mechanism (5) configured to rotate the support (4) about an axis that crosses a surface of the substrate (W) supported by the support (4) as a rotation axis; a plurality of nozzles (6a, 6b, 6c), which are aligned from the center toward the periphery of the substrate (W) supported by the support (4), configured to eject a treatment liquid to the surface of the substrate (W) on the support (4) being rotated by the rotation mechanism (5), and a controller (9) configured to control the nozzles to eject the treatment liquid at different ejection timings according to the thickness of a film of the treatment liquid formed on the surface of the substrate (W) on the support (4) being rotated by the rotation mechanism (5).

公开(公告)号：US10276406B2

公开(公告)日：2019-04-30

申请号：US14212899

申请日：2014-03-14

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke Hayashi ,  Masaaki Furuya ,  Takashi Ootagaki ,  Yuji Nagashima ,  Atsushi Kinase ,  Masahiro Abe

IPC: B08B3/10 ,  H01L21/67

Abstract: A substrate processing device includes a suction drying section drying a surface of a substrate by absorbing and removing a liquid droplet of volatile solvent formed on the surface of the substrate by a heating operation of a heating section.

公开(公告)号：US09972513B2

公开(公告)日：2018-05-15

申请号：US15450542

申请日：2017-03-06

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Yuki Saito ,  Konosuke Hayashi ,  Takashi Ootagaki ,  Yuji Nagashima

IPC: H01L21/00 ,  H01L21/67

CPC classification number: H01L21/6708 ,  H01L21/67017 ,  H01L21/67253

Abstract: According to the embodiment, a substrate treating device 10 for treating a semiconductor wafer W using an etchant L containing hydrofluoric acid and nitric acid includes a storage tank 210 that stores the etchant L; a concentration sensor 256 that measures a concentration of nitrous acid in the etchant L; an alcohol feeding line 280 that feeds IPA to the etchant L and maintains the concentration of nitrous acid to a predetermined value or more; and a substrate treating unit 100 that feeds the etchant L in the storage tank 210 to the semiconductor wafer W. The substrate treating device can improve the etching efficiency by efficiently generating nitrous acid, and thereby producing an etchant having a nitrous acid concentration suitable for etching.

公开(公告)号：US09607865B2

公开(公告)日：2017-03-28

申请号：US14212218

申请日：2014-03-14

Applicant: SHIBAURA MECHATRONICS CORPORATION

Inventor： Konosuke Hayashi ,  Masaaki Furuya ,  Takashi Ootagaki ,  Yuji Nagashima ,  Atsushi Kinase ,  Masahiro Abe

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67051 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/6776

Abstract: A substrate processing device 100 includes a cleaning liquid supply unit 114 supplying a cleaning liquid to a surface of a substrate W, a solvent supply unit 115 supplying a volatile solvent to the surface of the substrate W supplied with the cleaning liquid to replace the cleaning liquid on the surface of the substrate W with the volatile solvent, a heating unit 117 heating the substrate W supplied with the volatile solvent, and a drying unit 118 drying the surface of the substrate W by removing a droplet of the volatile solvent produced on the surface of the substrate W by a heating operation of the heating unit 117, and the heating unit 117 and the drying unit 118 are arranged in a course of transportation of the substrate W transported from the solvent supply unit 115.