公开(公告)号：US20220278269A1

公开(公告)日：2022-09-01

申请号：US17663569

申请日：2022-05-16

Applicant: Soitec

Inventor： Didier Landru

IPC: H01L41/313 ,  H03H9/02 ,  H01L41/053 ,  H01L41/08 ,  H01L41/083

Abstract: A method for manufacturing a hybrid structure comprising an effective layer of piezoelectric material having an effective thickness and disposed on a supporting substrate having a substrate thickness and a thermal expansion coefficient lower than that of the effective layer includes: a) a step of providing a bonded structure comprising a piezoelectric material donor substrate and the supporting substrate, b) a first step of thinning the donor substrate to form a thinned layer having an intermediate thickness and disposed on the supporting substrate, the assembly forming a thinned structure; c) a step of heat treating the thinned structure at an annealing temperature; and d) a second step, after step c), of thinning the thinned layer to form the effective layer. The method also comprises, prior to step b), a step a′) of determining a range of intermediate thicknesses that prevent the thinned structure from being damaged during step c).

公开(公告)号：US20220157650A1

公开(公告)日：2022-05-19

申请号：US17435631

申请日：2020-02-26

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed

IPC: H01L21/762

Abstract: A method for transferring a useful layer to a carrier substrate comprises: joining a front face of a donor substrate to a carrier substrate along a bonding interface to form a bonded structure; annealing the bonded structure to apply a weakening thermal budget thereto and bring a buried weakened plane in the donor substrate to a defined level of weakening, the anneal reaching a maximum hold temperature; and initiating a self-sustained and propagating splitting wave in the buried weakened plane by applying a stress to the bonded structure to lead to the useful layer being transferred to the carrier substrate. The initiation of the splitting wave occurs when the bonded structure experiences a thermal gradient defining a hot region and a cool region of the bonded structure, the stress being applied locally in the cool region, and the hot region experiencing a temperature lower than the maximum hold temperature.

公开(公告)号：US20210050249A1

公开(公告)日：2021-02-18

申请号：US16969346

申请日：2019-01-14

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Nadia Ben Mohamed ,  Rénald Guerin ,  Norbert Colombet

IPC: H01L21/762

Abstract: A detachable structure comprises a carrier substrate and a silicon oxide layer positioned on the substrate at a first interface. The detachable structure is notable in that: the oxide layer has a thickness of less than 200 nm; light hydrogen and/or helium species are distributed deeply and over the entire area of the structure according to an implantation profile, a maximum concentration of which is located in the thickness of the oxide layer; the total dose of implanted light species, relative to the thickness of the oxide layer, exceeds, at least by a factor of five, the solubility limit of these light species in the oxide layer.

公开(公告)号：US20200186117A1

公开(公告)日：2020-06-11

申请号：US16618696

申请日：2018-06-21

Applicant: Soitec

Inventor： Isabelle Huyet ,  Cedric Charles-Alfred ,  Didier Landru ,  Alexis Drouin

IPC: H03H3/10 ,  H01L41/187 ,  H01L41/312

Abstract: A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick layer introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.

公开(公告)号：US20200054978A1

公开(公告)日：2020-02-20

申请号：US16341390

申请日：2017-09-21

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk

IPC: B01D46/00

Abstract: A vertical furnace includes a chamber intended for receiving a loading column an inlet channel for fresh gas, arranged at an upper end of the chamber, the loading column comprising an upper portion, and a central portion for supporting a plurality of substrates. The vertical furnace further comprises a trapping device made of at least one material suitable for trapping all or part of the contaminants present in the fresh gas. The trapping device includes a circular part arranged on the upper part of the loading column, the circular part comprising fins regularly distributed over an upper surface of the circular part in order to increase the contact surface of the trapping device with the fresh gas.

公开(公告)号：US10250282B2

公开(公告)日：2019-04-02

申请号：US15531976

申请日：2015-09-17

Applicant: Soitec

Inventor： Oleg Kononchuk ,  Didier Landru ,  Christophe Figuet

IPC: H04B1/38 ,  H04B1/03 ,  H01L21/02 ,  H01L21/762 ,  H01M4/66 ,  H01L21/28 ,  H01L41/047

Abstract: A structure for radiofrequency applications includes: a semiconducting supporting substrate, and a trapping layer arranged on the supporting substrate. The trapping layer includes a higher defect density than a predetermined defect density. The predetermined defect density is the defect density beyond which the electric resistivity of the trapping layer is no lower than 10,000 ohm·cm over a temperature range extending from −20° C. to 120° C.

公开(公告)号：US20180316329A1

公开(公告)日：2018-11-01

申请号：US15769698

申请日：2016-10-17

Applicant: Soitec

Inventor： Pascal Guenard ,  Ionut Radu ,  Didier Landru ,  Eric Desbonnets

IPC: H03H3/04 ,  H01L41/053 ,  H01L41/312 ,  H03H9/02 ,  H03H9/05

CPC classification number: H01L41/312 ,  H01L41/0805 ,  H03H9/02102 ,  H03H9/02574

Abstract: A composite structure for an acoustic wave device comprising a heterostructure includes: a useful layer of piezoelectric material, having a first face and a second face, the first face being arranged at a first bonding interface on a support substrate having a coefficient of thermal expansion less than that of the useful layer, wherein the composite structure further comprises a functional layer, an entire surface of which is arranged at a second bonding interface on the second face of the useful layer and having a coefficient of thermal expansion less than that of the useful layer. Methods are used for producing such a composite structure.

公开(公告)号：US20180102264A1

公开(公告)日：2018-04-12

申请号：US15728953

申请日：2017-10-10

Applicant: Soitec

Inventor： Didier Landru ,  Oleg Kononchuk ,  Sébastien Simon

IPC: H01L21/67 ,  H01L21/677 ,  F27D7/06 ,  F27D5/00

Abstract: A thermal treatment system includes a chamber capable of receiving a plurality of substrates, a gas intake path in a distal portion of the chamber located opposite an area for entry of substrates into the chamber, and an outlet path for the gas and/or volatile species generated during the thermal treatment. The outlet path is located in a proximal portion of the chamber located near the area for entry of the substrates into the chamber. The system further includes a collector device in the proximal portion of the chamber. The collector device has a confinement opening oriented toward the distal portion of the chamber, and the collector device defines a compartment communicating with the outlet path, the compartment being configured so that the gas and the volatile species enter into the compartment via the confinement opening and pass through the compartment to reach the outlet path.

公开(公告)号：US09799549B2

公开(公告)日：2017-10-24

申请号：US14780467

申请日：2014-03-21

Applicant: Soitec

Inventor： Sebastien Kerdiles ,  Guillaume Chabanne ,  Francois Boedt ,  Aurelia Pierret ,  Xavier Schneider ,  Didier Landru

IPC: H01L21/762 ,  H01L21/02 ,  H01L27/12 ,  H01L29/06

CPC classification number: H01L21/76254 ,  H01L21/02164 ,  H01L21/0217 ,  H01L27/12 ,  H01L29/0649

Abstract: The disclosure relates to a process for manufacturing a composite structure, the process comprising the following steps: a) providing a donor substrate and a carrier substrate; b) forming a dielectric layer; c) forming a covering layer; d) forming a weakened zone in the donor substrate; e) joining the carrier substrate and the donor substrate via a contact surface having an outline; f) fracturing the donor substrate via the weakened zone, steps b) and e) being executed so that the outline is inscribed in the outline, and step c) being executed so that the covering layer covers the peripheral surface of the dielectric layer.

公开(公告)号：US09607879B2

公开(公告)日：2017-03-28

申请号：US14425205

申请日：2013-09-03

Applicant: Soitec

Inventor： Didier Landru

IPC: B23P19/00 ,  B23P19/02 ,  H01L21/762

CPC classification number: H01L21/76251 ,  H01L21/76254 ,  Y10T29/49822

Abstract: A process for fabrication of a structure includes assembling at least two substrates. At least one of these two substrates is intended to be used in electronics, optics, optoelectronics and/or photovoltaics. The structure includes at least two separation interfaces extending parallel to the main faces of the structure. The assembling process is carried out with a view to a separation of the structure along one interface selected from the interfaces, the separation being carried out by inserting a blade between the substrates and applying a parting force, via the blade. The interface chosen for the separation is formed so that it is more sensitive than the other interface(s) to stress corrosion. Separation occurs due to the combined action of the parting force and of a fluid capable of breaking siloxane (Si—O—Si) bonds present at the interface. A structure obtained by such a process may be separated along the chosen interface.