Manufacturing method for integrated multilayer magnetoresistive sensor

    公开(公告)号:US10353020B2

    公开(公告)日:2019-07-16

    申请号:US15013562

    申请日:2016-02-02

    Abstract: A method of manufacturing a magnetic-field sensor includes forming an insulating layer on a first surface of a substrate. First and second magnetoresistors are formed at different above the first surface of the substrate and are spaced apart from the first surface by different distances. The first and second magnetoresistors have respective main axes of magnetization transverse to one another, and respective secondary axes of magnetization transverse to one another. The method further includes forming a first magnetic-field generator configured to generate a first magnetic field having field lines along the main axis of magnetization of the first magnetoresistor, and forming a second magnetic-field generator configured to generate a second magnetic field having field lines along the main axis of magnetization of the second magnetoresistor.

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