公开(公告)号：US10389530B2

公开(公告)日：2019-08-20

申请号：US15862962

申请日：2018-01-05

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Mathieu Lisart

IPC: H04L9/08 ,  G06F21/78 ,  G06F11/14 ,  G06F21/62 ,  G06F21/77 ,  G06F3/06 ,  G06F12/14

Abstract: A method for processing content stored on a component is disclosed. A first partition of a first memory is encrypted with a first encryption key and a second partition of the first memory is encrypted with a second encryption key. The second encryption key is different from the first encryption key. The first encryption key is stored in a storage register of the component and the second encryption key is stored in a first location of a non-volatile memory. A memory address of the first location is stored in the first partition of the first memory.

公开(公告)号：US20190108367A1

公开(公告)日：2019-04-11

申请号：US16200370

申请日：2018-11-26

Applicant: Proton World International N.V. ,  STMicroelectronics (Rousset) SAS

Inventor： Jean-Louis Modave ,  Fabrice Marinet ,  Denis Farison

IPC: G06F21/85 ,  G11C27/00 ,  G06F21/73 ,  G06F21/81

Abstract: A method of authenticating a slave device. The method includes initializing, by a host device, a charge retention circuit of the slave device, and receiving, by the host device, an indication of a discharge time of the charge retention circuit. The host device authenticates the slave device based on the received indication of the discharge time of the charge retention device.

公开(公告)号：US20180150634A1

公开(公告)日：2018-05-31

申请号：US15659445

申请日：2017-07-25

Applicant: STMICROELECTRONICS (ROUSSET) SAS ,  PROTON WORLD INTERNATIONAL N.V.

Inventor： Jean-Louis Modave ,  Fabrice Marinet ,  Michael Peeters

IPC: G06F21/55 ,  G06F21/72

CPC classification number: G06F21/556 ,  G06F21/72 ,  G06F21/75 ,  G06F21/755 ,  G06F21/76 ,  H04L9/002 ,  H04L2209/043 ,  H04L2209/08

Abstract: An integrated circuit includes functional circuitry such as a processing core, memory interfaces, cryptographic circuitry, etc. The integrated circuit also includes protection circuitry to protect the functional circuitry of the integrated circuit against attacks by hidden channels. The protection circuitry, for each of a series of successive periods of time, selects a configuration of the functional circuitry from a set of configurations of the functional circuitry, sets a duration of the period of time, and applies the selected configuration of the functional circuitry for the set duration of the period of time.

公开(公告)号：US20180101702A1

公开(公告)日：2018-04-12

申请号：US15836626

申请日：2017-12-08

Applicant: Proton World International N.V. ,  STMicroelectronics (Rousset) SAS

Inventor： Jean-Louis Modave ,  Fabrice Marinet ,  Denis Farison

IPC: G06F21/85 ,  G11C27/00 ,  G06F21/73 ,  G06F21/81

CPC classification number: G06F21/85 ,  G06F21/73 ,  G06F21/81 ,  G11C27/00

Abstract: A method of authenticating a slave device. The method includes initializing, by a host device, a charge retention circuit of the slave device, and receiving, by the host device, an indication of a discharge time of the charge retention circuit. The host device authenticates the slave device based on the received indication of the discharge time of the charge retention device.

公开(公告)号：US20180005964A1

公开(公告)日：2018-01-04

申请号：US15446472

申请日：2017-03-01

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Thomas Ordas ,  Alexandre Sarafianos ,  Fabrice Marinet ,  Stephane Chesnais

IPC: H01L23/00 ,  H01L23/528 ,  H01L23/62 ,  H01L27/02

CPC classification number: H01L23/576 ,  G06F21/75 ,  G06F21/87 ,  G06K19/07327 ,  G06K19/07363 ,  H01L23/5227 ,  H01L23/528 ,  H01L23/62 ,  H01L27/0255

Abstract: An integrated circuit includes a number of components disposed at a surface of a semiconductor body and an interconnect region connecting the components into a functional circuit. A metallic shield is also produced in the interconnect region. A configurable stage is configurable to operate in a receiving antenna configuration or in a detection configuration during which the integrated circuit is configured to detect a presence of an external electromagnetic radiation representative of an attack by injection of faults

公开(公告)号：US09379066B2

公开(公告)日：2016-06-28

申请号：US14686908

申请日：2015-04-15

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Julien Mercier ,  Jimmy Fort ,  Alexandre Sarafianos

IPC: H01L29/76 ,  H01L23/00 ,  H01L27/06 ,  H01L27/092 ,  H01L29/732

CPC classification number: H01L23/576 ,  G09C1/00 ,  H01L23/57 ,  H01L27/0635 ,  H01L27/0658 ,  H01L27/092 ,  H01L29/7322 ,  H01L2924/0002 ,  H04L9/004 ,  H04L2209/12 ,  H01L2924/00

Abstract: A device for detecting a laser attack made on an integrated circuit chip comprises a bipolar transistor of a first type formed in a semiconductor substrate, that bipolar transistor comprising a parasitic bipolar transistor of a second type. A buried region, forming the base of the parasitic bipolar transistor, operates as a detector of the variations in current flowing caused by impingement of laser light on the substrate.

公开(公告)号：US20160124796A1

公开(公告)日：2016-05-05

申请号：US14996107

申请日：2016-01-14

Applicant: Proton World International N.V. ,  STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Jean-Louis Modave ,  Gilles Van Assche ,  Ronny Van Keer

IPC: G06F11/07

CPC classification number: G06F11/079 ,  G06F11/006 ,  G06F11/073 ,  G06F11/0751 ,  G06F21/554 ,  G06F21/755 ,  G06F2207/7219

Abstract: The disclosure concerns a method implemented by a processing device. The method includes performing a first execution by the processing device of a computing function based on one or more initial parameters stored in a first memory device. The execution of the computing function generates one or more modified values of at least one of the initial parameters, wherein during the first execution the one or more initial parameters are read from the first memory device and the one or more modified values are stored in a second memory device. The method also includes performing a second execution by the processing device of the computing function based on the one or more initial parameters stored in the first memory device.

公开(公告)号：US09311477B2

公开(公告)日：2016-04-12

申请号：US13715157

申请日：2012-12-14

Applicant: Proton World International N.V. ,  STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Jean-Louis Modave ,  Gilles Van Assche ,  Ronny Van Keer

IPC: G06F11/00 ,  G06F21/55

CPC classification number: G06F21/554 ,  G06F11/006 ,  G06F11/073 ,  G06F11/0751 ,  G06F11/079 ,  G06F21/755 ,  G06F2207/7219

Abstract: The disclosure concerns a method implemented by a processing device. The method includes performing a first execution by the processing device of a computing function based on one or more initial parameters stored in a first memory device. The execution of the computing function generates one or more modified values of at least one of the initial parameters, wherein during the first execution the one or more initial parameters are read from the first memory device and the one or more modified values are stored in a second memory device. The method also includes performing a second execution by the processing device of the computing function based on the one or more initial parameters stored in the first memory device.

Abstract translation: 本公开涉及由处理装置实现的方法。 该方法包括：基于存储在第一存储器设备中的一个或多个初始参数来执行计算功能的处理设备的第一执行。 计算功能的执行产生至少一个初始参数的一个或多个修改值，其中在第一次执行期间，从第一存储器件读取一个或多个初始参数，并且将一个或多个修改值存储在 第二存储设备。 该方法还包括基于存储在第一存储器件中的一个或多个初始参数来执行计算功能的处理设备的第二执行。

公开(公告)号：US20150048459A1

公开(公告)日：2015-02-19

申请号：US14531025

申请日：2014-11-03

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Jimmy Fort ,  Alexandre Sarafianos ,  Julien Mercier

IPC: H01L23/00 ,  H01L29/732 ,  H01L27/092 ,  H01L27/06

CPC classification number: H01L23/576 ,  G09C1/00 ,  H01L23/57 ,  H01L27/0635 ,  H01L27/0658 ,  H01L27/092 ,  H01L29/7322 ,  H01L2924/0002 ,  H04L9/004 ,  H04L2209/12 ,  H01L2924/00

Abstract: A device for detecting a laser attack made on an integrated circuit chip comprises a bipolar transistor of a first type formed in a semiconductor substrate, that bipolar transistor comprising a parasitic bipolar transistor of a second type. A buried region, forming the base of the parasitic bipolar transistor, operates as a detector of the variations in current flowing caused by impingement of laser light on the substrate.

Abstract translation: 用于检测在集成电路芯片上进行的激光攻击的装置包括形成在半导体衬底中的第一类型的双极晶体管，该双极晶体管包括第二类型的寄生双极晶体管。 形成寄生双极晶体管的基极的掩埋区域作为由激光照射在衬底上引起的电流变化的检测器。

公开(公告)号：US20130200371A1

公开(公告)日：2013-08-08

申请号：US13751549

申请日：2013-01-28

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Jimmy Fort ,  Alexandre Sarafianos ,  Julien Mercier

IPC: H01L23/00

CPC classification number: H01L23/576 ,  G09C1/00 ,  H01L23/57 ,  H01L27/0635 ,  H01L27/0658 ,  H01L27/092 ,  H01L29/7322 ,  H01L2924/0002 ,  H04L9/004 ,  H04L2209/12 ,  H01L2924/00

Abstract: A device for detecting a laser attack in an integrated circuit chip formed in the upper P-type portion of a semiconductor substrate incorporating an NPN bipolar transistor having an N-type buried layer, including a detector of the variations of the current flowing between the base of said NPN bipolar transistor and the substrate.

Abstract translation: 一种用于检测形成在具有N型掩埋层的NPN双极晶体管的半导体衬底的上部P型部分中形成的集成电路芯片中的激光攻击的装置，包括：检测器， 的NPN双极晶体管和衬底。