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公开(公告)号：US09525268B2
公开(公告)日：2016-12-20
申请号：US14865296
申请日：2015-09-25
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD
Inventor： Jun-ichi Hashimoto
CPC classification number: H01S5/3402 , H01S5/0202 , H01S5/0224 , H01S5/02272 , H01S5/02476 , H01S5/125 , H01S5/22 , H01S5/2224 , H01S2301/176
Abstract: A quantum cascade laser includes a substrate having a principal surface including first and second regions arranged along a first axis; a laser structure disposed on the principal surface in the second region, the laser structure having an end facet intersecting the first axis, the laser structure including a stripe-shaped stacked semiconductor layer extending along the first axis; and a distributed Bragg reflection structure disposed on the principal surface in the first region, the distributed Bragg reflection structure including a semiconductor wall made of a single semiconductor material, the distributed Bragg reflection structure being optically coupled to the end facet of the laser structure. The semiconductor wall has first and second side surfaces that intersect the first axis and extend along a second axis intersecting the principal surface. The semiconductor wall is located away from the end facet of the laser structure.
Abstract translation: 量子级联激光器包括具有包括沿着第一轴线布置的第一和第二区域的主表面的衬底; 激光结构，其设置在所述第二区域的主表面上，所述激光结构具有与所述第一轴相交的端面，所述激光结构包括沿着所述第一轴延伸的条状堆叠半导体层; 以及分布式布拉格反射结构，其布置在第一区域的主表面上，分布式布拉格反射结构包括由单个半导体材料制成的半导体壁，所述分布式布拉格反射结构光学耦合到激光结构的端面。 半导体壁具有与第一轴相交的第一和第二侧表面，并沿着与主表面相交的第二轴延伸。 半导体壁位于远离激光结构的端面的位置。
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公开(公告)号：US09246308B2
公开(公告)日：2016-01-26
申请号：US14292291
申请日：2014-05-30
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Jun-ichi Hashimoto , Michio Murata
CPC classification number: H01S5/227 , H01S5/02461 , H01S5/2224 , H01S5/3402 , H01S5/4087 , H01S2301/176
Abstract: A quantum cascade laser includes a semiconductor substrate including a principal surface; a mesa waveguide disposed on the principal surface of the semiconductor substrate, the mesa waveguide including a light emitting region and an upper cladding layer disposed on the light emitting region, the mesa waveguide extending in a direction orthogonal to a reference direction; and a current blocking layer formed on a side surface of the mesa waveguide. The light emitting region includes a plurality of core regions and a plurality of buried regions. The core regions and the buried regions are alternately arranged in the reference direction. The core region at a central portion of the mesa waveguide has a width smaller than a width of the core region at a peripheral portion of the mesa waveguide in the reference direction.
Abstract translation: 量子级联激光器包括：包括主表面的半导体衬底; 设置在所述半导体衬底的主表面上的台面波导，所述台面波导包括发光区域和设置在所述发光区域上的上覆层，所述台面波导在与基准方向正交的方向上延伸; 以及形成在台面波导的侧表面上的电流阻挡层。 发光区域包括多个芯区域和多个掩埋区域。 核心区域和埋入区域沿参考方向交替布置。 台面波导的中心部分的芯部区域的宽度小于台面波导在基准方向的周边部分的芯部区域的宽度。
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公开(公告)号：US20190334320A1
公开(公告)日：2019-10-31
申请号：US16297215
申请日：2019-03-08
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Jun-ichi Hashimoto
Abstract: A quantum cascade laser having a laser structure that includes a semiconductor mesa, a first end surface, a second end surface, and a first electrode provided on the semiconductor mesa. The laser structure includes a first region having the first end surface and a second region located between the second end surface and the first region. The semiconductor mesa includes a first mesa portion and a second mesa portion that are respectively included in the first region and the second region. The semiconductor mesa includes a first superlattice layer, a second superlattice layer, and a conductive semiconductor region. The first superlattice layer extends from the first end surface in the second axis direction and is included in the first mesa portion and the second mesa portion, and the second superlattice layer is provided in one of the first mesa portion and the second mesa portion.
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Patent Agency Ranking
公开(公告)号：US10404038B2
公开(公告)日：2019-09-03
申请号：US16011869
申请日：2018-06-19
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Jun-ichi Hashimoto
Abstract: A quantum cascade laser includes: a semiconductor device portion having a substrate, a semiconductor laminate, and a semiconductor insulating portion, the semiconductor laminate having a principal surface, the substrate having a back surface and a substrate end face, the semiconductor laminate having a laminate end face, the semiconductor insulating portion and the substrate being arranged along a reference plane intersecting the second direction, the semiconductor device portion having a front end face and a rear end face, the front end face and the rear end face being arranged in the second direction, the rear end face including the substrate end face, and the substrate end face extending along the reference plane; a first electrode disposed on the semiconductor laminate; and a metal film disposed on the rear end face, the semiconductor insulating portion and the second electrode, the metal film being apart from the first electrode.
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公开(公告)号：US10038308B2
公开(公告)日：2018-07-31
申请号：US15834706
申请日：2017-12-07
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Jun-ichi Hashimoto
CPC classification number: H01S5/3402 , B82Y20/00 , H01S5/02469 , H01S5/0281 , H01S5/0282 , H01S5/0287 , H01S5/0425 , H01S5/1082 , H01S5/12 , H01S5/2224 , H01S5/227 , H01S5/3401 , H01S5/34313 , H01S2301/176
Abstract: A quantum cascade semiconductor laser includes: a semiconductor mesa having a core layer extending in a direction of a first axis, and an end face extending in a direction of a second axis intersecting the direction of the first axis, and the semiconductor mesa being disposed on a principal surface of a substrate; and a reflective layer disposed on the end face of the semiconductor mesa, the reflective layer including a first semiconductor film in contact with the core layer, the core layer having a superlattice structure, the superlattice structure including a quantum well layer and a barrier layer, and the first semiconductor film of the reflective layer having a bandgap equal to or smaller than that of the quantum well layer.
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公开(公告)号：US20170141542A1
公开(公告)日：2017-05-18
申请号：US15352159
申请日：2016-11-15
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Hiroyuki YOSHINAGA , Tsukuru Katsuyama , Jun-ichi Hashimoto
CPC classification number: H01S5/3401 , H01S5/02276 , H01S5/026 , H01S5/028 , H01S5/0425 , H01S5/12 , H01S5/125 , H01S5/22 , H01S5/4087
Abstract: A quantum cascade laser includes a laser structure including laser waveguide structures and a first terrace region; first electrodes; pad electrodes; and wiring metal conductors. The laser structure includes first, second and third regions arranged in a direction of a first axis. The third region is disposed between the first and second regions. The first region has a first end facet disposed at a boundary between the first and third regions. The first end facet extends in a direction intersecting with the first axis. The second region has a second end facet disposed at a boundary between the second and third regions. The second region includes the laser structure. The pad electrodes are disposed on the first terrace region. The first electrodes are disposed on the laser waveguide structures. Each of the pad electrodes is connected to one of the first electrodes through one of the wiring metal conductors.
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公开(公告)号：US09356429B2
公开(公告)日：2016-05-31
申请号：US14194054
申请日：2014-02-28
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Jun-ichi Hashimoto
CPC classification number: H01S5/22 , B82Y20/00 , H01S5/0208 , H01S5/0422 , H01S5/0425 , H01S5/2224 , H01S5/3402 , H01S2301/176
Abstract: A quantum cascade laser includes a substrate having first, second, third, and fourth regions; a stacked semiconductor layer including n-type lower and upper conductive layers, a core layer having a mesa structure, and a cladding layer; first and second buried layers disposed on side surfaces of the core layer and above the substrate; a first electrode disposed on the upper conductive layer above the first region; and a second electrode disposed on the lower conductive layer above the fourth region. The core layer is disposed on the lower conductive layer above the second region. The upper conductive layer is disposed on the first buried layer and the core layer. The cladding layer is disposed on the upper conductive layer above the second region. The substrate and the cladding layer are formed of an undoped or semi-insulating semiconductor. The first and second buried layers are formed of a semi-insulating semiconductor.
Abstract translation: 量子级联激光器包括具有第一，第二，第三和第四区域的衬底; 包括n型下和上导电层的堆叠半导体层，具有台面结构的芯层和包层; 第一和第二掩埋层，设置在芯层的侧表面和衬底上; 第一电极，其设置在所述第一区域上方的所述上导电层上; 以及设置在第四区域上方的下导电层上的第二电极。 芯层设置在第二区域上方的下导电层上。 上导电层设置在第一掩埋层和芯层上。 包覆层设置在第二区域上方的上导电层上。 衬底和覆层由未掺杂或半绝缘半导体形成。 第一和第二埋层由半绝缘半导体形成。
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公开(公告)号：US09240675B2
公开(公告)日：2016-01-19
申请号：US14292250
申请日：2014-05-30
Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Inventor： Jun-ichi Hashimoto , Michio Murata
CPC classification number: H01S5/3401 , B82Y20/00 , H01S5/12 , H01S5/2213 , H01S5/2224 , H01S5/2275 , H01S5/3402 , H01S5/34313 , H01S5/4031 , H01S5/4068 , H01S5/4087
Abstract: A quantum cascade laser includes a semiconductor substrate including a principal surface; a mesa waveguide disposed on the principal surface of the semiconductor substrate, the mesa waveguide including a light emitting region and an upper cladding layer disposed on the light emitting region, the mesa waveguide extending in a direction orthogonal to a reference direction; and a current blocking layer formed on a side surface of the mesa waveguide. The light emitting region includes a plurality of core regions and a plurality of buried regions. The core regions and the buried regions are alternately arranged in the reference direction. The core region at a central portion of the mesa waveguide has a width larger than a width of the core region at a peripheral portion of the mesa waveguide in the reference direction.
Abstract translation: 量子级联激光器包括：包括主表面的半导体衬底; 设置在所述半导体衬底的主表面上的台面波导，所述台面波导包括发光区域和设置在所述发光区域上的上覆层，所述台面波导在与基准方向正交的方向上延伸; 以及形成在台面波导的侧表面上的电流阻挡层。 发光区域包括多个芯区域和多个掩埋区域。 核心区域和埋入区域沿参考方向交替布置。 台面波导的中心部分的芯部区域的宽度大于台面波导在参考方向的周边部分的纤芯区域的宽度。
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