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    Apparatus for polishing wafer and process for polishing wafer
    21.
    发明申请
    Apparatus for polishing wafer and process for polishing wafer 审中-公开
    用于抛光晶片的装置和用于抛光晶片的工艺

    公开(公告)号：US20060264158A1

    公开(公告)日：2006-11-23

    申请号：US11433843

    申请日：2006-05-11

    申请人： Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

    发明人： Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

    IPC分类号： B24B7/30 ,  B24B29/00

    CPC分类号： B24B37/20 ,  B24B37/042

    摘要： An apparatus for polishing wafers and a process for polishing wafers are provided. The apparatus for polishing a wafer which polishes the wafer W held by a carrier plate which rotates around an axis, by pressing and rubbing the wafer to a polishing pad disposed to a polishing platen 12 which rotates around another axis which differs from said axis, in which the polishing pad 11 is equipped with plural areas including a first area 11a and a second area 11b having hardness different from each other, each of the first 11a area and second area 11b being formed at a distribution and/or an area ratio such that the rate of the time or distance that the wafer W passes through the first area 11a during polishing to the time or distance that the wafer W passes through the second area 11b during polishing becomes a predetermined value.

    摘要翻译： 提供了抛光晶片的装置和抛光晶圆的工艺。 用于抛光晶片W抛光的装置，通过将晶片按压和摩擦将晶片W保持在由承载板保持的晶片W上，抛光垫设置在与所述轴不同的另一轴线上旋转的研磨台板12上， 其中抛光垫11配备有多个区域，包括具有彼此不同硬度的第一区域11a和第二区域11b，多个第一区域和第二区域11b分别形成分布和/或 使得晶片W在抛光期间通过第一区域11a的时间或距离的速度在晶片W在抛光期间通过第二区域11b的时间或距离成为预定值。

    Method for etching single wafer
    22.
    发明授权
    Method for etching single wafer 有权
    蚀刻单晶片的方法

    公开(公告)号：US08466071B2

    公开(公告)日：2013-06-18

    申请号：US12162829

    申请日：2007-01-24

    申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    IPC分类号： H01L21/302

    CPC分类号： H01L21/30604 ,  H01L21/02019 ,  H01L21/6708

    摘要： An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.

    摘要翻译： 本发明的目的是提供一种用于蚀刻单晶片的方法，其有效地实现了晶片的高平坦度和生产率的提高。 在用于蚀刻单个晶片的方法中，旋转从硅单晶锭切片的单个薄盘状晶片，并且用提供给其的蚀刻溶液蚀刻晶片的前表面。 在该方法中，分别在晶片的径向的不同部分分别在晶片的正面上方设置多个供给喷嘴， 然后改变选自多个供应喷嘴的蚀刻溶液的温度，种类和供给流量的一个或多个条件。

    Single wafer etching method
    23.
    发明授权
    Single wafer etching method 失效
    单晶片蚀刻方法

    公开(公告)号：US07906438B2

    公开(公告)日：2011-03-15

    申请号：US11669431

    申请日：2007-01-31

    申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/6708 ,  H01L21/02019 ,  H01L21/30604

    摘要： An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching apparatus, a single thin disk-like wafer sliced from a silicon single crystal ingot is mounted on a wafer chuck and spun thereon, and an overall front surface of the wafer is etched with an etching solution supplied thereto by centrifugal force generated by spinning the wafer 11. The singe wafer etching apparatus includes a plurality of supply nozzles 26, 27 capable of discharging the etching solution 14 from discharge openings 26a, 27a onto the front surface of the wafer 11, nozzle-moving devices each capable of independently moving the plurality of supply nozzles 28, 29, and an etching solution supplying device 30 for supplying the etching solution 14 to each of the plurality of supply nozzles and discharging the etching solution 14 from each of the discharge openings to the front surface of the wafer 11.

    摘要翻译： 本发明的目的是提供一种实现晶片的高平坦度和提高其生产率的单晶片蚀刻装置。 在单晶片蚀刻装置中，将从硅单晶锭切片的单个薄片状晶片安装在晶片卡盘上并在其上纺丝，并且用通过离心力供给的蚀刻溶液蚀刻晶片的整个前表面 单晶晶片蚀刻装置包括能够将蚀刻溶液14从排出口26a，27a排出到晶片11的前表面上的多个供给喷嘴26,27，各喷嘴移动装置 独立地移动多个供给喷嘴28,29，以及用于将蚀刻液14供给到多个供给喷嘴中的每一个的蚀刻液供给装置30，将蚀刻液14从各喷出口排出到 晶片11。

    Process for producing silicon wafer
    25.
    发明授权
    Process for producing silicon wafer 有权
    硅晶片生产工艺

    公开(公告)号：US07648890B2

    公开(公告)日：2010-01-19

    申请号：US11504969

    申请日：2006-08-15

    申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L21/6708 ,  H01L21/02019 ,  H01L21/30604

    摘要： A process for producing a silicon wafer comprising a single-wafer etching step of performing an etching by supplying an etching solution through a supplying-nozzle to a surface of a single and a thin-discal wafer obtained by slicing a silicon single crystal ingot and rotating the wafer to spread the etching solution over all the surface of the wafer; and a grinding step of grinding the surface of the wafer, in this order, wherein the etching solution used in the single-wafer etching step is an aqueous acid solution which contains hydrogen fluoride, nitric acid, and phosphoric acid in an amount such that the content of which by weight % at a mixing rate of fluoric acid:nitric acid:phosphoric acid is 0.5 to 40%:5 to 50%:5 to 70%, respectively.

    摘要翻译： 1.一种硅晶片的制造方法，其特征在于，具有通过将供给喷嘴供给蚀刻液的蚀刻液进行蚀刻的单晶片蚀刻工序，所述蚀刻液通过将硅单晶锭切片而得到的单晶片和薄片晶片的表面旋转， 晶片将蚀刻溶液铺展在晶片的所有表面上; 以及按照该顺序研磨晶片的表面的研磨步骤，其中在单晶片蚀刻步骤中使用的蚀刻溶液是含有氟化氢，硝酸和磷酸的酸性水溶液，其含量使得 其含量以氟酸：硝酸：磷酸的混合比例为0.5〜40％：5〜50％：5〜70％。

    Manufacturing method of silicon wafer
    26.
    发明授权
    Manufacturing method of silicon wafer 有权
    硅晶片的制造方法

    公开(公告)号：US07645702B2

    公开(公告)日：2010-01-12

    申请号：US10562236

    申请日：2004-10-28

    申请人： Sakae Koyata ,  Kazushige Takaishi

    发明人： Sakae Koyata ,  Kazushige Takaishi

    IPC分类号： H01L21/302

    CPC分类号： H01L21/30604 ,  H01L21/02019

    摘要： The manufacturing method of the present invention provides a silicon wafer, both sides of the wafer having a highly accurate flatness and small surface roughness, which is a single surface mirror-polished wafer with the front and rear surfaces of the wafer identifiable by visual observation, and excellent in flatness when held by a stepper chuck and the like. The manufacturing method of the present invention includes an etching process, a lapping process, and a double surface polishing process to simultaneously polish the front and rear surfaces of a wafer after the etching process. The polishing removal depth (A) of the wafer front surface is 5 to 10 μm in the double surface simultaneous polishing process, and the polishing removal depth (B) in the rear surface is 2 to 6 μm, and a difference between the polishing removal depth A and the polishing removal depth B is 3 to 4 μm.

    摘要翻译： 本发明的制造方法提供了一种硅晶片，其晶片的两侧具有高度精确的平坦度和小的表面粗糙度，其是通过目视观察可以确定晶片的前表面和后表面的单面镜面抛光晶片， 并且由步进卡盘等保持时的平坦度优异。 本发明的制造方法包括蚀刻工艺，研磨工艺和双面抛光工艺，以在蚀刻工艺之后同时抛光晶片的前表面和后表面。 在双面同时抛光工艺中，晶片正面的抛光去除深度（A）为5〜10μm，后表面的研磨去除深度（B）为2〜6μm，抛光去除 深度A和抛光去除深度B为3〜4μm。

    Method for Etching Single Wafer
    27.
    发明申请
    Method for Etching Single Wafer 有权
    蚀刻单晶片的方法

    公开(公告)号：US20090004876A1

    公开(公告)日：2009-01-01

    申请号：US12162829

    申请日：2007-01-24

    申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

    IPC分类号： H01L21/306

    CPC分类号： H01L21/30604 ,  H01L21/02019 ,  H01L21/6708

    摘要： An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.

    摘要翻译： 本发明的目的是提供一种用于蚀刻单晶片的方法，其有效地实现了晶片的高平坦度和生产率的提高。 在用于蚀刻单个晶片的方法中，旋转从硅单晶锭切片的单个薄盘状晶片，并且用提供给其的蚀刻溶液蚀刻晶片的前表面。 在该方法中，分别在晶片的径向的不同部分分别在晶片的正面上方设置多个供给喷嘴， 然后改变选自多个供应喷嘴的蚀刻溶液的温度，种类和供给流量的一个或多个条件。

    Processing Method of Silicon Wafer
    29.
    发明申请
    Processing Method of Silicon Wafer 审中-公开
    硅晶片的加工方法

    公开(公告)号：US20070267387A1

    公开(公告)日：2007-11-22

    申请号：US10561821

    申请日：2004-10-28

    申请人： Sakae Koyata ,  Kazushige Takaishi

    发明人： Sakae Koyata ,  Kazushige Takaishi

    IPC分类号： C03C15/00 ,  C03C25/68

    CPC分类号： H01L21/30608 ,  H01L21/02019 ,  H01L21/30604

    摘要： The processing method of a silicon wafer of the present invention includes an etching process (13) in which acid etching solution and alkali etching solution are stored in plural etching tanks, respectively and a wafer having degraded superficial layers gone through a cleaning process (12) subsequent to a lapping process (11) is immersed into the acid etching solution and the alkali etching solution in order, a front surface mirror-polishing process (18) to mirror-polish one surface of the etched wafer, and a cleaning process (19) to clean the front surface mirror-polished wafer, wherein the etching process is performed by the alkali etching after the acid etching, and wherein the acid etching solution contains phosphoric acid equal to or more than 30 percent by weight in the acid aqueous water solution 100 percent by weight mainly composed of hydrofluoric acid and nitric acid. The processing method of the present invention maintains the flatness after lapping, and at the same time, can reduce the surface roughness. Further, in the wafer in which the front surface is mirror-polished, a good flatness is obtained, and moreover, the rear surface roughness becomes small.

    摘要翻译： 本发明的硅晶片的处理方法包括：蚀刻工艺（13），其中酸蚀刻溶液和碱蚀刻溶液分别存储在多个蚀刻槽中，并且具有劣化的表面层的晶片经过清洁过程（12） 在研磨过程（11）之后，依次浸入酸腐蚀溶液和碱蚀刻溶液中，对被蚀刻的晶片的一个表面进行镜面抛光的前表面镜面抛光工艺（18）和清洁处理（19） ）清洗前表面镜面抛光晶片，其中通过在酸蚀刻之后的碱蚀刻进行蚀刻处理，并且其中酸蚀刻溶液在酸性水溶液中含有等于或大于30重量％的磷酸 100重量％主要由氢氟酸和硝酸组成。 本发明的加工方法保持研磨后的平整度，同时可以降低表面粗糙度。 此外，在前表面被镜面抛光的晶片中，获得良好的平坦度，而且后表面粗糙度变小。