公开(公告)号：US10553625B2

公开(公告)日：2020-02-04

申请号：US16026742

申请日：2018-07-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： In Kyung Yoo ,  Chong Sup Chang ,  Dong Hyun Yang

IPC: H01L21/32 ,  H01L27/12 ,  H01L21/3213

Abstract: A method of manufacturing a display device, includes providing a substrate including a first stepped part, forming a metal layer on the substrate and the first stepped part, forming an organic layer pattern on the metal layer at a position corresponding to a sidewall of the stepped part, forming a photosensitive layer on the metal layer and the organic layer pattern, patterning the photosensitive layer to form a photosensitive layer pattern adjacent to the organic layer pattern, and forming a metal line by removing the organic layer pattern and an exposed portion of the metal layer through an etching process using the photosensitive layer pattern as a mask.

公开(公告)号：US09841676B2

公开(公告)日：2017-12-12

申请号：US15139037

申请日：2016-04-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hoon Kang ,  Bum Soo Kam ,  Se Yoon Oh ,  Chong Sup Chang

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/302 ,  H01L21/461 ,  G03F7/00 ,  G03F7/20 ,  G03F7/32 ,  H01L31/18 ,  H01L29/41 ,  H01L51/44 ,  C23F1/02 ,  H01L21/3213

CPC classification number: G03F7/0007 ,  C23F1/02 ,  G02F1/133512 ,  G02F1/13439 ,  G03F7/2002 ,  G03F7/32 ,  H01L21/32134 ,  H01L21/467 ,  H01L29/413 ,  H01L31/1884 ,  H01L31/1888 ,  H01L51/442

Abstract: A method for manufacturing a display device includes forming a plurality of light blocking patterns on a first surface of a transparent substrate, wherein a first light blocking pattern of the plurality of light blocking patterns has a different line width than a second light blocking pattern of the plurality of light blocking patterns. An insulating layer is formed on the first surface of the transparent substrate and the light blocking patterns. A conductive layer is formed on the insulating layer. A photo-resist layer is formed on the conductive layer. The photo-resist layer is exposed with ultraviolet rays through a second surface of the transparent substrate, wherein the first and second surfaces of the transparent substrate are opposite to each other. The photo-resist layer is developed. The conductive layer is etched using the photo-resist layer as a mask. The photo-resist layer is removed.

公开(公告)号：US11621305B2

公开(公告)日：2023-04-04

申请号：US16904715

申请日：2020-06-18

Applicant: Samsung Display Co., Ltd.

Inventor： Sang Jin Park ,  Hyun Ae Kim ,  Hee Ra Kim ,  Ha Na Seo ,  Chong Sup Chang ,  Eui Kang Heo

IPC: H01L27/32 ,  H01L33/58 ,  H01L51/52 ,  H01L25/075 ,  H01L33/50 ,  H01L33/20 ,  H01L25/16

Abstract: A display device includes a first display substrate and a second display substrate. The first display substrate includes a first base, a first electrode disposed on the first base, a second electrode spaced apart from the first electrode, and a light emitting element disposed between the first electrode and the second electrode. The second display substrate faces the first display substrate and is configured to receive light emitted from the light emitting element. The second display substrate includes a second base, a first color filter disposed on a surface of the second base, and a first wavelength conversion pattern disposed on the first color filter. The first wavelength conversion pattern includes a first surface facing the first display substrate, and a second surface facing the first surface and the first color filter. The first surface includes a curved surface portion recessed toward the second surface.

公开(公告)号：US11349054B2

公开(公告)日：2022-05-31

申请号：US16910962

申请日：2020-06-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Chong Sup Chang ,  Hyun Ae Kim ,  Eui Kang Heo

IPC: H01L33/62 ,  H01L25/075 ,  H01L29/786 ,  H01L27/12

Abstract: A display device includes a substrate, a first electrode and a second electrode which are spaced apart from each other on the substrate, a first insulating pattern on the substrate to cover at least a portion of each of the first electrode and the second electrode, a light emitting element between the first electrode and the second electrode on the first insulating pattern, a first contact electrode in contact with the first electrode and one end portion of the light emitting element, a second contact electrode in contact with the second electrode and another end portion of the light emitting element, and a second insulating pattern on the light emitting element and of which at least a portion is in contact with each of the first contact electrode and the second contact electrode, wherein the second insulating pattern includes a first upper surface not in contact with the first contact electrode or the second contact electrode.

公开(公告)号：US20210217895A1

公开(公告)日：2021-07-15

申请号：US17115470

申请日：2020-12-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang ,  Dae Ho Kim ,  Jae Neung Kim ,  Myoung Geun Cha ,  Sang Gap Kim ,  Yu-Gwang Jeong

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US20210066561A1

公开(公告)日：2021-03-04

申请号：US16910962

申请日：2020-06-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Chong Sup Chang ,  Hyun Ae Kim ,  Eui Kang Heo

IPC: H01L33/62 ,  H01L25/075 ,  H01L27/12 ,  H01L29/786

Abstract: A display device includes a substrate, a first electrode and a second electrode which are spaced apart from each other on the substrate, a first insulating pattern on the substrate to cover at least a portion of each of the first electrode and the second electrode, a light emitting element between the first electrode and the second electrode on the first insulating pattern, a first contact electrode in contact with the first electrode and one end portion of the light emitting element, a second contact electrode in contact with the second electrode and another end portion of the light emitting element, and a second insulating pattern on the light emitting element and of which at least a portion is in contact with each of the first contact electrode and the second contact electrode, wherein the second insulating pattern includes a first upper surface not in contact with the first contact electrode or the second contact electrode.

公开(公告)号：US10192992B2

公开(公告)日：2019-01-29

申请号：US15704063

申请日：2017-09-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang ,  Dae Ho Kim ,  Jae Neung Kim ,  Myoung Geun Cha ,  Sang Gab Kim ,  Yu-Gwang Jeong

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417 ,  H01L27/32

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US20180095362A1

公开(公告)日：2018-04-05

申请号：US15831547

申请日：2017-12-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hoon Kang ,  Bum Soo Kam ,  Se Yoon Oh ,  Chong Sup Chang

IPC: G03F7/00 ,  H01L51/44 ,  H01L31/18 ,  H01L29/41 ,  H01L21/3213 ,  G02F1/1343 ,  C23F1/02 ,  G03F7/32 ,  G03F7/20 ,  G02F1/1335 ,  H01L21/467

Abstract: A method for manufacturing a display device includes forming a plurality of light blocking patterns on a first surface of a transparent substrate, wherein a first light blocking pattern of the plurality of light blocking patterns has a different line width than a second light blocking pattern of the plurality of light blocking patterns. An insulating layer is formed on the first surface of the transparent substrate and the light blocking patterns. A conductive layer is formed on the insulating layer. A photo-resist layer is formed on the conductive layer. The photo-resist layer is exposed with ultraviolet rays through a second surface of the transparent substrate, wherein the first and second surfaces of the transparent substrate are opposite to each other. The photo-resist layer is developed. The conductive layer is etched using the photo-resist layer as a mask. The photo-resist layer is removed.

公开(公告)号：US09837446B2

公开(公告)日：2017-12-05

申请号：US15427696

申请日：2017-02-08

Applicant: Samsung Display Co., Ltd.

Inventor： Do-Hyun Kim ,  Yoon Ho Khang ,  Dong-Hoon Lee ,  Sang Ho Park ,  Se Hwan Yu ,  Cheol Kyu Kim ,  Yong-Su Lee ,  Sung Haeng Cho ,  Chong Sup Chang ,  Dong Jo Kim ,  Jung Kyu Lee

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/45 ,  H01L29/7869

Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.

公开(公告)号：US09589998B2

公开(公告)日：2017-03-07

申请号：US15010497

申请日：2016-01-29

Applicant: Samsung Display Co., Ltd.

Inventor： Do-Hyun Kim ,  Yoon Ho Khang ,  Dong-Hoon Lee ,  Sang Ho Park ,  Se Hwan Yu ,  Cheol Kyu Kim ,  Yong-Su Lee ,  Sung Haeng Cho ,  Chong Sup Chang ,  Dong Jo Kim ,  Jung Kyu Lee

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/45

CPC classification number: H01L27/124 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/45 ,  H01L29/7869

Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.

Abstract translation: 薄膜晶体管阵列面板包括：设置在基板上的栅极布线层; 设置在所述栅极布线层上的氧化物半导体层; 以及数据布线层，其设置在所述氧化物半导体层上，所述数据布线层包括包含铜的主布线层和设置在所述主布线层上并包括铜合金的覆盖层。