公开(公告)号：US20140151683A1

公开(公告)日：2014-06-05

申请号：US13873426

申请日：2013-04-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sang Ho Park ,  Su-Hyoung Kang ,  Yoon Ho Khang ,  Dong Jo Kim ,  Joon Yong Park ,  Sang Won Shin ,  Dong Hwan Shim

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: A thin film transistor includes an oxide semiconductor, in which an oxygen defect content of the oxide semiconductor is no greater than about 0.15 based on an entire oxygen content included in the oxide semiconductor.

Abstract translation: 薄膜晶体管包括氧化物半导体，其中氧化物半导体的氧缺陷含量基于氧化物半导体中包含的全部氧含量不大于约0.15。

公开(公告)号：US11251247B2

公开(公告)日：2022-02-15

申请号：US16843764

申请日：2020-04-08

Applicant: Samsung Display Co., Ltd.

Inventor： Hyung Jun Kim ,  Myoung Hwa Kim ,  Tae Sang Kim ,  Yeon Keon Moon ,  Joon Seok Park ,  Sang Woo Sohn ,  Sang Won Shin ,  Jun Hyung Lim ,  Hye Lim Choi

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L27/32 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L21/4763 ,  H01L21/465 ,  H01L21/4757 ,  H01L27/12

Abstract: A display device and a method for fabricating the same are provided. The display device comprises pixels connected to scan lines, and to data lines crossing the scan lines, each of the pixels including a light emitting element, and a first transistor configured to control a driving current supplied to the light emitting element according to a data voltage applied from the data line, the first transistor including a first active layer having an oxide semiconductor, and a first oxide layer on the first active layer and having a crystalline oxide containing tin (Sn).

公开(公告)号：US10332916B2

公开(公告)日：2019-06-25

申请号：US16013410

申请日：2018-06-20

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dong Min Lee ,  Sang Won Shin ,  Hyun Eok Shin

IPC: H01L21/44 ,  H01L27/12 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  H01L21/285 ,  H01L29/49 ,  H01L29/786

Abstract: A metal line includes a conductive layer containing aluminum (Al) or an aluminum alloy, a first capping layer on the conductive layer, the first capping layer containing titanium nitride (TiNx), and a second capping layer on the first capping layer, the second capping layer containing titanium (Ti).

公开(公告)号：US10067276B2

公开(公告)日：2018-09-04

申请号：US15477719

申请日：2017-04-03

Applicant: Samsung Display Co., Ltd

Inventor： Moon Jung An ,  Jung Gun Nam ,  Su Kyoung Yang ,  Gyung Min Baek ,  Kang Soo Han ,  Joon Yong Park ,  Sang Won Shin ,  Hyun Eok Shin

IPC: G02F1/1333 ,  G02B5/30 ,  G02F1/1335 ,  G02F1/1368

CPC classification number: G02B5/3058 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133528 ,  G02F1/1368 ,  G02F2001/133548 ,  G02F2201/123 ,  G02F2201/50

Abstract: Provided is a polarizer. The polarizer includes a base layer and a wire grid layer which is disposed on the base layer and which include a plurality of wire metal patterns extending along a first direction and spaced apart from each other along a second direction crossing the first direction, wherein the wire grid layer is made of an aluminum (Al) alloy containing nickel (Ni) and lanthanum (La).

公开(公告)号：US20180069128A1

公开(公告)日：2018-03-08

申请号：US15686415

申请日：2017-08-25

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Eok Shin ,  Sang Won Shin ,  Dong Min Lee ,  Ju Hyun Lee ,  Shin Il Choi

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78633 ,  G02F1/136209 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3276 ,  H01L2227/323 ,  H01L2251/5315 ,  H01L2251/533

Abstract: A display device according to an exemplary embodiment of the present invention includes: a substrate; a gate line and a data line that are provided on the substrate and are insulated from each other; a thin film transistor that is connected with the gate line and the data line; and a pixel electrode that is connected with the thin film transistor, in which at least one of the gate line and the data line includes a metal layer and a blocking layer that contacts the metal layer, and the blocking layer includes a first metal from a first group including molybdenum (Mo) and tungsten (W), a second metal from a second group including vanadium (V), niobium (Nb), zirconium (Zr), and tantalum (Ta), and oxygen (O).

公开(公告)号：US09722089B2

公开(公告)日：2017-08-01

申请号：US14482413

申请日：2014-09-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yeon Keon Moon ,  Sang Woo Sohn ,  Katsushi Kishimoto ,  Takayuki Fukasawa ,  Sang Won Shin

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  C23C14/08 ,  C23C14/34

CPC classification number: H01L29/7869 ,  C23C14/083 ,  C23C14/086 ,  C23C14/3464 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02581 ,  H01L21/02631 ,  H01L29/66969

Abstract: A thin film transistor array panel includes a substrate and a gate line disposed on the substrate. The gate line includes a gate electrode. A gate insulating layer is disposed on the gate line. An oxide semiconductor layer is disposed on the gate insulating layer. The oxide semiconductor layer at least partially overlaps the gate electrode. A data line is disposed on the oxide semiconductor layer. The data line includes a source electrode and a drain electrode facing the source electrode. The oxide semiconductor layer includes tungsten, indium, zinc, or tin.

公开(公告)号：US09627548B2

公开(公告)日：2017-04-18

申请号：US14841559

申请日：2015-08-31

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Ju Kang ,  Dong Hee Lee ,  Gwang Min Cha ,  Sang Won Shin ,  Sang Woo Sohn

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/45 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/47635 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76855 ,  H01L21/76867 ,  H01L23/53233 ,  H01L23/53238 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor array panel that includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed on the substrate; a gate insulating layer disposed between the gate electrode and the semiconductor layer; a source electrode disposed on the semiconductor layer and a drain electrode facing the source electrode; a metal oxide layer covering the source electrode and the drain electrode; and a passivation layer covering the source electrode, the drain electrode, and the metal oxide layer, wherein the source electrode and the drain electrode include a first material and a second material which is added to the first material and metal included in the metal oxide layer is formed by diffusing the second material.

公开(公告)号：US20150255611A1

公开(公告)日：2015-09-10

申请号：US14487916

申请日：2014-09-16

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： KATSUSHI KISHIMOTO ,  Yoshinori Tanaka ,  Yeon Keon Moon ,  Sang Woo Sohn ,  Sang Won Shin ,  Takayuki Fukasawa

IPC: H01L29/786 ,  H01L29/26 ,  H01J37/34

CPC classification number: H01L29/7869 ,  C23C14/3414 ,  H01J37/3429 ,  H01J37/3491 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78693

Abstract: An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.

Abstract translation: 氧化物溅射靶包括铟（In），锌（Zn），锡（Sn）和镓（Ga）以及钨（W）中的至少一种，其量为0.005mol％至1mol％。