公开(公告)号：US20210006226A1

公开(公告)日：2021-01-07

申请号：US16591862

申请日：2019-10-03

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Ran Hee SHIN ,  Jin Suk SON ,  Je Hong KYOUNG

IPC: H03H9/13 ,  H03H9/02 ,  H03H9/17

Abstract: A bulk-acoustic wave resonator may include: a substrate; a resonance portion; a first electrode disposed on the substrate; a piezoelectric layer disposed on the first electrode in the resonance portion; a second electrode disposed on the piezoelectric portion in the resonance portion; and a seed layer disposed in a lower portion of the first electrode. The seed layer may be formed of titanium (Ti) having a hexagonal close packed (HCP) structure, or an alloy of Ti having the HCP structure. The seed layer may have a thickness greater than or equal to 300 Å and less than or equal to 1000 Å, or may be thinner than the first electrode.

公开(公告)号：US20200266795A1

公开(公告)日：2020-08-20

申请号：US16449561

申请日：2019-06-24

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Je Hong KYOUNG ,  Sung Sun KIM ,  Jin Suk SON ,  Ran Hee SHIN ,  Hwa Sun LEE

IPC: H03H9/02 ,  H03H9/17

Abstract: A bulk-acoustic wave resonator comprises a substrate, a resonant portion comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, and further comprising a center portion and an extension portion that is disposed along a periphery of the center portion, and an insertion layer that is disposed in the extension portion between the first electrode and the piezoelectric layer, and the insertion layer is formed of an aluminum alloy containing scandium (Sc).

公开(公告)号：US20190013792A1

公开(公告)日：2019-01-10

申请号：US15972694

申请日：2018-05-07

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Sung Sun KIM ,  Sang Kee YOON ,  Chang Hyun LIM ,  Jin Suk SON ,  Ran Hee SHIN ,  Je Hong KYOUNG

IPC: H03H9/17 ,  H03H9/13 ,  H03H3/02 ,  H01L41/047 ,  H01L41/314 ,  H01L41/29

Abstract: An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.

公开(公告)号：US20180278232A1

公开(公告)日：2018-09-27

申请号：US15992606

申请日：2018-05-30

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Sung HAN ,  Hwa Sun LEE ,  Seung Joo SHIN ,  Ran Hee SHIN

IPC: H03H9/13 ,  H03H9/02 ,  H03H9/17 ,  H03H9/54

CPC classification number: H03H9/13 ,  H03H9/02149 ,  H03H9/173 ,  H03H9/54

Abstract: A bulk acoustic wave resonator includes a substrate, a first electrode and a second electrode disposed on the substrate, and a piezoelectric layer disposed between the first electrode and the second electrode. At least one of the first electrode and the second electrode includes an alloy of molybdenum and tantalum.

公开(公告)号：US20180262180A1

公开(公告)日：2018-09-13

申请号：US15808662

申请日：2017-11-09

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Jin Suk SON ,  Sung Sun KIM ,  Je Hong KYOUNG ,  Hwa Sun LEE ,  Ran Hee SHIN

IPC: H03H9/17 ,  H01L41/16 ,  H01L41/18 ,  H01L41/29 ,  H01L41/39

CPC classification number: H03H9/17 ,  H01L41/16 ,  H01L41/183 ,  H01L41/187 ,  H01L41/29 ,  H01L41/39 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/173 ,  H03H2003/021

Abstract: A film bulk acoustic resonator includes: a first electrode disposed on a substrate; a piezoelectric body disposed on the first electrode and including AlN to which a dopant is added; and a second electrode disposed on the piezoelectric body and facing the first electrode such that the piezoelectric body is interposed between the second electrode and the first electrode, wherein the dopant includes either one of 0.1 to 24 at % of Ta and 0.1 to 23 at % of Nb.

公开(公告)号：US20180183407A1

公开(公告)日：2018-06-28

申请号：US15795337

申请日：2017-10-27

Applicant: Samsung Electro-Mechanics Co., LTD.

Inventor： Tae Kyung LEE ,  Je Hong KYOUNG ,  Jin Suk SON ,  Hwa Sun LEE ,  Ran Hee SHIN

IPC: H03H9/54 ,  H03H9/17

CPC classification number: H03H9/54 ,  H03H3/02 ,  H03H9/02086 ,  H03H9/13 ,  H03H9/171 ,  H03H9/173 ,  H03H2003/021

Abstract: A bulk acoustic wave resonator includes a substrate; and a resonator including a first electrode, a piezoelectric layer, and a second electrode sequentially disposed on the substrate. Either one or both of the first electrode and the second electrode includes an alloy of molybdenum (Mo) and tantalum (Ta).

公开(公告)号：US20180041189A1

公开(公告)日：2018-02-08

申请号：US15392068

申请日：2016-12-28

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  In Young KANG ,  Ran Hee SHIN ,  Jin Suk SON

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/54

CPC classification number: H03H9/171 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/173 ,  H03H9/54

Abstract: A bulk acoustic resonator includes a substrate, a first electrode disposed above the substrate, a piezoelectric body disposed on the first electrode and including a plurality of piezoelectric layers each including aluminum nitride with a doping material, and a second electrode disposed on the piezoelectric body, where at least one of the piezoelectric layers is a compressive piezoelectric layer formed under compressive stress.