公开(公告)号：US10121961B2

公开(公告)日：2018-11-06

申请号：US15479653

申请日：2017-04-05

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Xueti Tang ,  Hong-Sik Jung ,  Roman Chepulskyy

IPC: H01L21/00 ,  H01L43/08 ,  H01F10/32 ,  H01F10/12 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory including a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer is described. Each of the magnetic junctions includes a pinned layer, a free layer and a nonmagnetic spacer layer between reference and free layers. The free layer has at least one of a tilted easy axis and a high damping constant. The tilted easy axis is at a nonzero acute angle from a direction perpendicular-to-plane. The high damping constant is at least 0.02. The at least one SO active layer is adjacent to the free layer and carries a current in-plane. The at least one SO active layer exerts a SO torque on the free layer due to the current. The free layer is switchable using the SO torque.

公开(公告)号：US20180309049A1

公开(公告)日：2018-10-25

申请号：US16005617

申请日：2018-06-11

Applicant: Samsung Electronics Co., LTD.

Inventor： Roman Chepulskyy ,  Dmytro Apalkov

IPC: H01L43/10 ,  H01L27/22 ,  H01F10/32 ,  G11C11/16 ,  H01F41/30

CPC classification number: H01L43/10 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

Abstract: A magnetic device and method for providing the magnetic device are described. The magnetic device includes magnetic junctions and spin-orbit interaction (SO) active layer(s). The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer has a free layer perpendicular magnetic anisotropy (PMA) energy greater than a free layer out-of-plane demagnetization energy. The free layer also includes a diluted magnetic layer that has a PMA greater than its out-of-plane demagnetization energy. The diluted magnetic layer includes magnetic material(s) and nonmagnetic material(s) and has an exchange stiffness that is at least eighty percent of an exchange stiffness for the magnetic material(s). The SO active layer(s) are adjacent to the free layer. The SO active layer(s) carry a current in-plane and exert a SO torque on the free layer due to the current. The free layer is switchable between stable magnetic states using the SO torque.

公开(公告)号：US20180261762A1

公开(公告)日：2018-09-13

申请号：US15603402

申请日：2017-05-23

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Xueti Tang ,  Vladimir Nikitin ,  Shuxia Wang ,  Gen Feng

IPC: H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a hybrid free layer. The hybrid free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The nonmagnetic spacer layer is between the free layer and the reference layer. The hybrid free layer includes a soft magnetic layer, a hard magnetic layer and an oxide coupling layer between the hard magnetic layer and the soft magnetic layer. The soft magnetic layer has a soft layer magnetic thermal stability coefficient of not more than thirty. The hard magnetic layer has a hard layer magnetic thermal stability coefficient of at least twice the soft layer magnetic thermal stability coefficient.

公开(公告)号：US20180205009A1

公开(公告)日：2018-07-19

申请号：US15445695

申请日：2017-02-28

Applicant: Samsung Electronics Co., LTD.

Inventor： Sebastian Schafer ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Don Koun Lee

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. A first portion of a magnetoresistive stack corresponding to the magnetic junction is provided. Providing this portion of the magnetoresistive stack includes providing at least one layer for a free layer of the magnetic junction. A second portion of the magnetoresistive stack is provided after the step of providing the first portion of the magnetoresistive stack. The magnetoresistive stack is patterned to provide the magnetic junction after the step of providing the second portion of the magnetoresistive stack. An ambient temperature for the magnetoresistive stack and the magnetic junction does not exceed a crystallization temperature of the free layer after the step of providing the free layer through the step of patterning the magnetoresistive stack. The magnetic junction is annealed at an anneal temperature not less than the crystallization temperature after the step of patterning the magnetoresistive stack.

公开(公告)号：US20180190898A1

公开(公告)日：2018-07-05

申请号：US15396296

申请日：2016-12-30

Applicant: Samsung Electronics Co., LTD.

Inventor： Shuxia Wang ,  Dmytro Apalkov ,  Vladimir Nikitin

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22 ,  H01L43/10

CPC classification number: H01L27/226 ,  G11C11/161 ,  G11C11/165 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes a free layer, first and second reference layers, and first and second nonmagnetic spacer layers. The free layer is switchable between stable magnetic states using a current passed through the magnetic junction. The first and second nonmagnetic spacer layers are between the free layer and first and second reference layers. The first and second reference layers have first and second reference layer magnetic lengths. The free layer has a free layer magnetic length less than the first and second reference layer magnetic lengths. The free layer magnetic length has a first end and a second end opposite to the first end. The free layer and the reference layers are oriented such that the first and second reference layer magnetic lengths extend past the first and second ends of the free layer.

公开(公告)号：US09966901B2

公开(公告)日：2018-05-08

申请号：US15067009

申请日：2016-03-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro Apalkov ,  Roman Chepulskyy ,  Vladimir Nikitin

IPC: H03B5/08 ,  H03B15/00 ,  H01L29/82 ,  H01L43/08 ,  G11C11/16 ,  H01L43/10

CPC classification number: H03B15/006 ,  G11C11/16 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

Abstract: A spin-torque oscillator includes: a driving reference layer having a fixed magnetization; a nonmagnetic spacer layer; and a free layer having a changeable magnetization exhibiting an easy-cone magnetic anisotropy, the nonmagnetic spacer layer being between the driving reference layer and the free layer, a magnetic anisotropy energy of the free layer having a local maximum along an axis, a local minimum at an angle from the axis, and a global maximum different from the local maximum, the angle being greater than zero degrees, wherein the spin-torque oscillator is configured such that the changeable magnetization of the free layer precesses around the axis.

公开(公告)号：US09634241B2

公开(公告)日：2017-04-25

申请号：US14809113

申请日：2015-07-24

Applicant: Samsung Electronics Co., LTD.

Inventor： William H. Butler ,  Kamaram Munira ,  Roman Chepulskyy ,  Dmytro Apalkov

IPC: H01L43/08 ,  H01L43/10

CPC classification number: H01L43/08 ,  H01L43/10

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a reference layer and nonmagnetic spacer layer between the free and reference layers. At least one of the free and reference layers includes at least one Heusler multilayer. Each of the at least one Heusler multilayer includes a plurality of Heusler adjoining layers that at least one interface. The Heusler layers include a plurality of Heusler alloys, have a plurality of lattice parameters and have a plurality of coefficients of thermal expansion. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

公开(公告)号：US20160043301A1

公开(公告)日：2016-02-11

申请号：US14809113

申请日：2015-07-24

Applicant: Samsung Electronics Co., LTD.

Inventor： William H. Butler ,  Kamaram Munira ,  Roman Chepulskyy ,  Dmytro Apalkov

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/08 ,  H01L43/10

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a reference layer and nonmagnetic spacer layer between the free and reference layers. At least one of the free and reference layers includes at least one Heusler multilayer. Each of the at least one Heusler multilayer includes a plurality of Heusler adjoining layers that at least one interface. The Heusler layers include a plurality of Heusler alloys, have a plurality of lattice parameters and have a plurality of coefficients of thermal expansion. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁结包括自由层，参考层和在自由层和参考层之间的非磁性间隔层。 游离和参考层中的至少一个包括至少一个Heusler多层。 至少一个Heusler多层中的每一个包括多个Heusler邻接层，至少一个界面。 Heusler层包括多个Heusler合金，具有多个晶格参数并且具有多个热膨胀系数。 磁结被配置为使得当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。

公开(公告)号：US20150294703A1

公开(公告)日：2015-10-15

申请号：US14559536

申请日：2014-12-03

Applicant: Samsung Electronics Co., LTD.

Inventor： Dmytro Apalkov ,  Roman Chepulskyy

IPC: G11C11/16 ,  H01L43/02

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L43/02 ,  H01L43/08

Abstract: A magnetic device usable in electronic devices is described. The magnetic device includes a magnetic junction and at least one smart thermal barrier that is thermally coupled with the magnetic junction. The magnetic junction includes at least one reference layer, at least one nonmagnetic spacer layer and a free layer. The nonmagnetic spacer layer(s) are between the reference layer(s) and the free layer. The free layer is switchable between stable magnetic states when a write current passed through the magnetic junction. The smart thermal barrier has a low heat conductance below a transition temperature range, and a high heat conductance above the transition temperature range.

Abstract translation: 描述可用于电子设备的磁性装置。 磁性装置包括磁结和至少一个与磁结热耦合的智能热障。 磁结包括至少一个参考层，至少一个非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。 智能隔热板具有低于过渡温度范围的低导热系数，高于过渡温度范围的高导热系数。

公开(公告)号：US09076541B2

公开(公告)日：2015-07-07

申请号：US13851274

申请日：2013-03-27

Applicant: Samsung Electronics Co., LTD.

Inventor： Adrian E. Ong ,  Alexey Vasilyevitch Khvalkovskiy ,  Dmytro Apalkov

IPC: G11C11/00 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16

CPC classification number: G11C11/1673 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1653 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18

Abstract: A magnetic memory includes memory array tiles (MATs), intermediate circuitry, global bit lines and global circuitry. Each MAT includes bit lines, word lines, and magnetic storage cells having magnetic junction(s), selection device(s) and at least part of a spin-orbit interaction (SO) active layer adjacent to the magnetic junction(s). The SO active layer exerts a SO torque on the magnetic junction(s) due to a preconditioning current passing through the SO active layer. The magnetic junction(s) are programmable using write current(s) driven through the magnetic junction(s) and the preconditioning current. The bit and word lines correspond to the magnetic storage cells. The intermediate circuitry controls read and write operations within the MATs. Each global bit line corresponds to a portion of the MATs. The global circuitry selects and drivesportions of the global bit lines for read operations and write operations.

Abstract translation: 磁存储器包括存储器阵列瓦片（MATs），中间电路，全局位线和全局电路。 每个MAT包括具有磁结，选择装置的位线，字线和磁存储单元以及与磁结相邻的自旋轨道相互作用（SO）有源层的至少一部分。 SO活性层由于预处理电流通过SO活性层而在磁结上施加SO转矩。 磁结可以使用通过磁结驱动的写入电流和预调节电流进行编程。 位和字线对应于磁存储单元。 中间电路控制MAT内的读写操作。 每个全局位线对应于MAT的一部分。 全局电路选择和驱动全局位线的部分，用于读操作和写操作。