公开(公告)号：US20140097470A1

公开(公告)日：2014-04-10

申请号：US13910417

申请日：2013-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-seob KIM ,  Kyoung-yeon KIM ,  Joon-yong KIM ,  Jai-kwang SHIN ,  Jae-joon OH ,  Hyuk-soon CHOI ,  Jong-bong HA ,  Sun-kyu HWANG ,  In-jun HWANG

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786

Abstract: According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply layer may have a higher energy bandgap than the channel layer. The p-type semiconductor structure may have an energy bandgap that is different than the channel supply layer. The p-type semiconductor structure may include a hole injection layer (HIL) on the channel supply layer and be configured to inject holes into at least one of the channel layer and the channel supply in an on state. The p-type semiconductor structure may include a depletion forming layer on part of the HIL. The depletion forming layer may have a dopant concentration that is different than the dopant concentration of the HIL.

Abstract translation: 根据示例性实施例，HEMT包括在沟道层上的沟道供应层，沟道供应层上的p型半导体结构，p型半导体结构上的栅电极以及与两侧隔开的源极和漏极 的栅电极。 通道供应层可以具有比沟道层更高的能量带隙。 p型半导体结构可以具有与沟道供给层不同的能量带隙。 p型半导体结构可以包括在沟道供应层上的空穴注入层（HIL），并且被配置为在导通状态下将空穴注入至少一个沟道层和沟道电源。 p型半导体结构可以在HIL的一部分上包括耗尽形成层。 耗尽形成层可以具有不同于HIL的掺杂剂浓度的掺杂剂浓度。

公开(公告)号：US20140091363A1

公开(公告)日：2014-04-03

申请号：US13874920

申请日：2013-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-chul JEON ,  Young-hwan PARK ,  Jae-joon OH ,  Kyoung-yeon KIM ,  Joon-yong KIM ,  Ki-yeol PARK ,  Jai-kwang SHIN ,  Sun-kyu HWANG

IPC: H01L29/778

CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/7786

Abstract: According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.

Abstract translation: 根据示例性实施例，常关高电子迁移率晶体管（HEMT）包括：具有第一氮化物半导体的沟道层，沟道层上的沟道供应层，沟道供应层侧面的源电极和漏电极 沟道供应层上的耗尽形成层，耗尽型层上的栅极绝缘层和栅极绝缘层上的栅电极。 沟道供给层包括第二氮化物半导体，并且被配置为在沟道层中诱导二维电子气（2DEG）。 耗尽形成层被配置为具有至少两个厚度，并且被配置为在2DEG的至少部分区域中形成耗尽区。 栅电极与耗尽形成层接触。

公开(公告)号：US20140091311A1

公开(公告)日：2014-04-03

申请号：US13921466

申请日：2013-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-chul JEON ,  Baik-woo LEE ,  Jai-kwang SHIN ,  Jae-joon OH

IPC: H01L29/205

CPC classification number: H01L29/205 ,  H01L21/2654 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0629 ,  H01L28/10 ,  H01L28/20 ,  H01L29/0642 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/86 ,  H01L29/94

Abstract: A nitride semiconductor based power converting device includes a nitride semiconductor based power transistor, and at least one nitride semiconductor based passive device. The passive device and the power transistor respectively include a channel layer including a first nitride semiconductor material, and a channel supply layer on the channel layer including a second nitride semiconductor material to induce a 2-dimensional electron gas (2DEG) at the channel layer. The passive device may be a resistor, an inductor, or a capacitor.

Abstract translation: 一种基于氮化物半导体的功率转换器件包括基于氮化物半导体的功率晶体管和至少一个氮化物半导体的无源器件。 无源器件和功率晶体管分别包括包括第一氮化物半导体材料的沟道层和在沟道层上的沟道供应层，该沟道层包括在沟道层处引起二维电子气（2DEG）的第二氮化物半导体材料。 无源器件可以是电阻器，电感器或电容器。

公开(公告)号：US20140049296A1

公开(公告)日：2014-02-20

申请号：US13789884

申请日：2013-03-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-chul JEON ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH

IPC: H03K3/012

CPC classification number: H03K3/012 ,  H03K17/6871 ,  H03K2017/6875

Abstract: An electronic device may include a first transistor having a normally-on characteristic; a second transistor connected to the first transistor and having a normally-off characteristic; a constant voltage application unit configured to apply a constant voltage to a gate of the first transistor; and a switching unit configured to apply a switching signal to the second transistor. The first transistor may be a high electron mobility transistor (HEMT). The second transistor may be a field-effect transistor (FET). The constant voltage application unit may include a diode connected to the gate of the first transistor; and a constant current source connected to the diode.

Abstract translation: 电子设备可以包括具有常开特性的第一晶体管; 连接到第一晶体管并具有常关特性的第二晶体管; 恒电压施加单元，被配置为向所述第一晶体管的栅极施加恒定电压; 以及切换单元，被配置为向第二晶体管施加切换信号。 第一晶体管可以是高电子迁移率晶体管（HEMT）。 第二晶体管可以是场效应晶体管（FET）。 恒压施加单元可以包括连接到第一晶体管的栅极的二极管; 和连接到二极管的恒流源。

公开(公告)号：US20140021511A1

公开(公告)日：2014-01-23

申请号：US13804188

申请日：2013-03-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-chul JEON ,  Kyoung-yeon KIM ,  Jong-seob KIM ,  Joon-yong KIM ,  Ki-yeol PARK ,  Young-hwan PARK ,  Jai-kwang SHIN ,  Jae-joon OH ,  Hyuk-soon CHOI ,  Jong-bong HA ,  Sun-kyu HWANG ,  In-jun HWANG

IPC: H01L29/778 ,  H01L29/66

CPC classification number: H01L29/778 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/475 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/872

Abstract: A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.

Abstract translation: 根据示例实施例的高电子迁移率晶体管（HEMT）包括沟道层，沟道层上的沟道供应层，沟道层和沟道供应层中的至少一个上的源电极和漏电极，栅电极 源极电极和漏极电极之间，肖特基电极与沟道供给层形成肖特基接触。 通道供应层的上表面可以限定肖特基电极调节单元。 肖特基电极的至少一部分可以在肖特基电极调节单元中。 肖特基电极电连接到源电极。