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    SEMICONDUCTOR PACKAGE
    21.
    发明申请
    SEMICONDUCTOR PACKAGE 有权

    公开(公告)号：US20220115333A1

    公开(公告)日：2022-04-14

    申请号：US17319232

    申请日：2021-05-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Junghoon HAN ,  Jongmin LEE

    IPC: H01L23/00 ,  H01L23/31 ,  H01L23/13 ,  H01L23/498 ,  H01L21/48 ,  H01L21/56

    Abstract: A semiconductor package includes an upper conductive pattern and a redistribution layer on a first surface of a substrate, a semiconductor chip facing the first surface of the substrate, the semiconductor chip being spaced apart from the first surface of the substrate, a conductive bump bonding between the semiconductor chip and the upper conductive pattern, the conductive bump electrically connecting the semiconductor chip and the upper conductive pattern, and an upper passivation layer on the redistribution layer, a portion of the upper passivation layer facing an edge of a lower surface of the semiconductor chip.

    THERMAL PAD, SEMICONDUCTOR CHIP INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SEMICONDUCTOR CHIP
    24.
    发明申请
    THERMAL PAD, SEMICONDUCTOR CHIP INCLUDING THE SAME AND METHOD OF MANUFACTURING THE SEMICONDUCTOR CHIP 有权

    公开(公告)号：US20250054916A1

    公开(公告)日：2025-02-13

    申请号：US18931874

    申请日：2024-10-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jimin CHOI ,  Jeonil LEE ,  Jongmin LEE ,  Juik LEE

    IPC: H01L25/065 ,  H01L23/367 ,  H01L23/42 ,  H01L23/48

    Abstract: A thermal pad of a semiconductor chip, a semiconductor chip including the thermal pad, and a method of manufacturing the semiconductor chip, the thermal pad including a thermal core in a trench at a lower surface of a semiconductor substrate, the thermal core being configured to receive heat generated from a through silicon via (TSV) vertically extending through the semiconductor substrate; a thermal head connected to the thermal core and protruding from the lower surface of the semiconductor substrate, the thermal head being configured to dissipate the heat in the thermal core; a first insulation layer between an inner surface of the trench and the thermal core; and a second insulation layer between the first insulation layer and the thermal core.

    OUTDOOR UNIT OF AIR CONDITIONER
    25.
    发明申请
    OUTDOOR UNIT OF AIR CONDITIONER 有权

    公开(公告)号：US20250020340A1

    公开(公告)日：2025-01-16

    申请号：US18659618

    申请日：2024-05-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chungwan YUK ,  Jeonguk KOH ,  Woong SUN ,  Kwangnam SHIN ,  Jungho YU ,  Jongmin LEE

    IPC: F24F1/22 ,  F24F13/20

    Abstract: An outdoor unit of an air conditioner comprises: a case; a board frame configured to move relative to the case and on which a printed circuit board is mounted; and a frame guide disposed inside the case and configured to support the board frame. The board frame is configured to slide between a first frame position with respect to the frame guide and a second frame position with respect to the frame guide, and to allow a sliding movement of the board frame to be guided by the frame guide. In response to the board frame being at the second frame position with respect to the frame guide, the board frame is configured to rotate about a rotation axis passing through the frame guide.

    SEMICONDUCTOR DEVICES
    27.
    发明公开
    SEMICONDUCTOR DEVICES 审中-公开

    公开(公告)号：US20230146151A1

    公开(公告)日：2023-05-11

    申请号：US17944407

    申请日：2022-09-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jongmin LEE

    IPC: H01L27/108

    CPC classification number: H01L27/10897 ,  H01L27/10814 ,  H01L27/10894

    Abstract: A semiconductor device includes gate structures, bit line structures, contact plug structures, first capacitors, and second capacitors. The gate structures are formed in a substrate including a cell region and a peripheral circuit region, and each of the gate structures extends in a first direction. The bit line structures are formed on the cell region of the substrate, and each of the bit line structures extends in a second direction. The contact plug structures are disposed in the second direction between the bit line structures on the substrate. The first capacitors are formed on the contact plug structures, respectively. The conductive pad is formed on the peripheral circuit region of the substrate, and is electrically insulated from the substrate. The second capacitors are formed on the conductive pad, and are disposed in the first and second directions.

    SEMICONDUCTOR DEVICE
    28.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20230034533A1

    公开(公告)日：2023-02-02

    申请号：US17726370

    申请日：2022-04-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jongmin LEE ,  Hoonmin KIM

    IPC: H01L27/108 ,  H01L49/02

    Abstract: A semiconductor device may include lower electrodes on a substrate, a first upper support layer pattern on upper sidewalls of the lower electrodes, and a dielectric layer and an upper electrode on surfaces of the lower electrodes and the first upper support layer pattern. The lower electrodes may be in a honeycomb pattern with the lower electrodes are at vertexes and center of a hexagon. The first upper support layer pattern may be a first plate shape including openings exposing some of all the lower electrodes. The lower electrodes may form rows in a first direction, the rows arranged in a second direction perpendicular to the first direction. Each opening may expose portions of upper sidewalls of at least four lower electrodes in two adjacent rows. Each of the openings may have a longitudinal direction in the first direction. In semiconductor devices, defects from bending stresses may be decreased.

    COMPOSITION, PATTERNED FILM, AND ELECTRONIC DEVICE INCLUDING THE SAME
    29.
    发明申请
    COMPOSITION, PATTERNED FILM, AND ELECTRONIC DEVICE INCLUDING THE SAME 审中-公开

    公开(公告)号：US20200017765A1

    公开(公告)日：2020-01-16

    申请号：US16507461

    申请日：2019-07-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Taekhoon KIM ,  Seonmyeong CHOI ,  Jongmin LEE ,  Tae Gon KIM ,  Young Seok PARK ,  Shin Ae JUN

    IPC: C09K11/88 ,  C09K11/08 ,  G03F7/004 ,  G03F7/032 ,  G03F7/029 ,  H01L27/32 ,  G02F1/1335

    Abstract: A photosensitive composition including a quantum dot; a binder polymer including a carboxylic acid group; a photopolymerizable monomer including a carbon-carbon double bond; and a photoinitiator, a patterned film produced therefrom and a display device including the same. The quantum dot includes a seed including a first semiconductor nanocrystal, a quantum well including a second semiconductor nanocrystal, the quantum well surrounding the seed and a shell disposed on the quantum well, the shell including a third semiconductor nanocrystal and not including cadmium, the second semiconductor nanocrystal has a different composition from each of the first semiconductor nanocrystal and the third semiconductor nanocrystal, and an energy bandgap of the second semiconductor nanocrystal is smaller than an energy bandgap of the first semiconductor nanocrystal and an energy bandgap of the third semiconductor nanocrystal.

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