公开(公告)号：US09478551B2

公开(公告)日：2016-10-25

申请号：US14081543

申请日：2013-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Hun Kim ,  Ju-Youn Kim ,  Koung-Min Ryu ,  Jong-Mil Youn ,  Jong-Ho Lee

IPC: H01L21/70 ,  H01L29/76 ,  H01L27/11 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L27/1104 ,  H01L21/823807 ,  H01L27/092 ,  H01L29/1029

Abstract: A semiconductor device includes a channel layer over an active region, first and second field regions adjacent the active region, and a gate structure over the channel layer and portions of the first and second field regions. The first and second field regions include grooves adjacent respective sidewalls of the channel layer, and bottom surfaces of the grooves are below a bottom surface of the channel layer.

Abstract translation: 半导体器件包括在有源区上的沟道层，与有源区相邻的第一和第二场区以及沟道层上的栅极结构以及第一和第二场区的部分。 第一和第二场区域包括与沟道层的相应侧壁相邻的沟槽，并且沟槽的底表面在沟道层的底表面下方。

公开(公告)号：US09391158B2

公开(公告)日：2016-07-12

申请号：US14728018

申请日：2015-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Young-Hun Kim

IPC: H01L29/51 ,  H01L27/088 ,  H01L21/02 ,  H01L29/49 ,  H01L21/28 ,  H01L27/11 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L29/517 ,  H01L21/02 ,  H01L21/28088 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/823857 ,  H01L27/088 ,  H01L27/092 ,  H01L27/1104 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/78

Abstract: A semiconductor device having high-k gate insulation films and a method of fabricating the semiconductor device are provided. The semiconductor device includes a first gate insulation film on a substrate and the first gate insulation film includes a material selected from the group consisting of HfO2, ZrO2, Ta2O5, TiO2, SrTiO3 and (Ba,Sr)TiO3, and lanthanum (La). Additionally, the semiconductor device includes a first barrier film on the first gate insulation film, a first gate electrode on the first barrier film, and n-type source/drain regions in the substrate at both sides of the first gate electrode.

Abstract translation: 提供了具有高k栅极绝缘膜的半导体器件和制造半导体器件的方法。 半导体器件包括在衬底上的第一栅极绝缘膜，第一栅极绝缘膜包括选自HfO 2，ZrO 2，Ta 2 O 5，TiO 2，SrTiO 3和（Ba，Sr）TiO 3和镧（La）的材料。 此外，半导体器件包括第一栅极绝缘膜上的第一阻挡膜，第一阻挡膜上的第一栅极电极和第一栅电极两侧的基板中的n型源极/漏极区域。

公开(公告)号：US20140287755A1

公开(公告)日：2014-09-25

申请号：US14223176

申请日：2014-03-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyu-Hyun LIM ,  Young-Hun Kim ,  Jae-Hwan Lee

IPC: H04W36/00

CPC classification number: H04W36/0083 ,  H04W84/045

Abstract: A method and apparatus are provided for setting a neighbor in a Radio Network Controller (RNC) of a mobile communication system. The method includes receiving, from a Node B, a message indicating that a radio link is released; storing source cell information, when restoration of the radio link fails; receiving, from a User Equipment (UE), an RRC cell update message; storing target cell information included in the RRC cell update message; determining whether a neighbor of a source cell and a target cell is set, based on the source cell information and the target cell information; and setting the neighbor by using the source cell information and the target cell information if the neighbor is not set.

Abstract translation: 提供了一种用于在移动通信系统的无线电网络控制器（RNC）中设置邻居的方法和装置。 该方法包括从节点B接收指示无线电链路被释放的消息; 存储源小区信息，当无线链路恢复失败时; 从用户设备（UE）接收RRC小区更新消息; 存储所述RRC小区更新消息中包含的目标小区信息; 基于所述源小区信息和所述目标小区信息来确定源小区和目标小区的邻居是否被设置; 并且如果没有设置邻居，则使用源小区信息和目标小区信息来设置邻居。