公开(公告)号：US11934701B2

公开(公告)日：2024-03-19

申请号：US17722780

申请日：2022-04-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun Kang ,  Youngdeok Seo ,  Hyuna Kim ,  Hyunkyo Oh ,  Donghoo Lim

IPC: G06F3/06 ,  G11C7/10

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0679 ,  G11C7/1051

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes outputting a first command including a request for on-chip valley search (OVS) count data of a memory region of the non-volatile memory device to the non-volatile memory device, wherein the OVS count data includes a first count value and a second count value of a first read voltage and a third count value and a fourth count value of a second read voltage, receiving the OVS count data from the non-volatile memory device, determining a distribution type of the memory region to be a predicted distribution type, from among a plurality of distribution types, based on the OVS count data, and determining a subsequent operation, based on the predicted distribution type.

公开(公告)号：US20240012569A1

公开(公告)日：2024-01-11

申请号：US18184319

申请日：2023-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woohyun Kang ,  Su Chang Jeon ,  Suhyun Kim ,  Hyuna Kim ,  Youngdeok Seo ,  Hyunkyo Oh ,  Donghoo Lim ,  Byungkwan Chun

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/0659 ,  G06F3/0679

Abstract: Disclosed is a method of operating a storage controller which communicates with a non-volatile memory device. The method includes providing a read command to the non-volatile memory device, receiving first read data and first distribution information corresponding to the read command from the non-volatile memory device, determining whether an error of the first read data is uncorrectable, and updating offset information of a history table in the storage controller based on the first distribution information, in response to determining that the error of the first read data is correctable.

公开(公告)号：US11868647B2

公开(公告)日：2024-01-09

申请号：US17522578

申请日：2021-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngdeok Seo ,  Jinyoung Kim ,  Sehwan Park ,  Ilhan Park

IPC: G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/0604 ,  G06F3/0679

Abstract: A nonvolatile memory device includes a memory block including a memory area, an on-chip valley search (OVS) circuit performing an OVS sensing operation on the memory block, and a buffer memory storing at least one variation table including variation information of a threshold voltage of memory cells, obtained from the OVS sensing operation. A reading operation including an OVS sensing operation and a main sensing operation on the memory area is performed in response to a read command applied by a memory controller, the OVS sensing operation is performed at an OVS sensing level, and the main sensing operation is performed at a main sensing level reflecting the variation information. In the nonvolatile memory device, correction accuracy for deterioration of a word line threshold voltage may be improved, and a burden on a memory controller may be reduced.

公开(公告)号：US11763903B2

公开(公告)日：2023-09-19

申请号：US17498832

申请日：2021-10-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sehwan Park ,  Jinyoung Kim ,  Youngdeok Seo ,  Dongmin Shin

IPC: G11C16/34 ,  G11C7/10 ,  G11C11/54 ,  G11C16/04 ,  G11C16/10 ,  G11C16/14 ,  G11C16/26

CPC classification number: G11C16/3459 ,  G11C7/1057 ,  G11C7/1084 ,  G11C11/54 ,  G11C16/0433 ,  G11C16/102 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3445 ,  G11C16/3495

Abstract: A nonvolatile memory device includes; a memory cell array including a meta data region storing chip-level information, control logic identifying a target cell in response to a command, machine learning (ML) logic inferring an optimum parameter based on the chip-level information and physical information associated with the target cell applied as inputs to an artificial neural network model, and a buffer memory configured to store weight parameters of the artificial neural network model.

公开(公告)号：US11556415B2

公开(公告)日：2023-01-17

申请号：US17397321

申请日：2021-08-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sehwan Park ,  Jinyoung Kim ,  Ilhan Park ,  Youngdeok Seo

IPC: G06F11/10 ,  G06F11/07 ,  G06F11/30 ,  G06F11/14 ,  G06F3/06 ,  G11C16/04 ,  G11C16/26

Abstract: A memory device may determine cell count information from a threshold voltage distribution of memory cells and may determine a detection case based on the cell count information when an error in read data, received from the memory device performing a read operation is not corrected. A memory controller may control the memory device to execute a read operation using a development time determined in consideration of an offset voltage of a read voltage corresponding to the detection case. When an error in the read data is successfully corrected, the memory controller may update a table, stored in the memory controller, using a dynamic offset voltage obtained by inputting the cell count information to a machine learning model.

公开(公告)号：US11537842B2

公开(公告)日：2022-12-27

申请号：US16448636

申请日：2019-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunkyo Oh ,  Youngdeok Seo ,  Jinbaek Song ,  Sanghyun Choi

IPC: G06N3/04 ,  G06N5/04 ,  G11C16/26 ,  G11C16/04

Abstract: A storage device includes a non-volatile memory including a plurality of blocks, a buffer memory that stores a plurality of on-cell counts, which are generated by reading memory cells connected to a plurality of reference word lines of the plurality of blocks by using a read level, and an artificial neural network model, and a controller that inputs an on-cell count corresponding to a target block among the plurality of on-cell counts and a number of a target word line of the target block to the artificial neural network model, and infers a plurality of read levels for reading data of memory cells connected to the target word line using the artificial neural network model.

公开(公告)号：US11409441B2

公开(公告)日：2022-08-09

申请号：US16999201

申请日：2020-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yeonji Kim ,  Youngdeok Seo ,  Chanha Kim ,  Kangho Roh ,  Hyunkyo Oh ,  Heewon Lee

IPC: G06F3/06 ,  G06N20/00 ,  G06F11/10

Abstract: An operation method of a storage controller which includes a nonvolatile memory device, the method including: collecting a first parameter indicating a degradation factor of a first memory area of the nonvolatile memory device and a second parameter indicating a degree of degradation occurring at the first memory area, in an initial driving period; selecting a first function model of a plurality of function models based on the first parameter and the second parameter and predicting a first error tendency of the first memory area based on the first function model; determining a first reliability interval based on the first error tendency; and performing a first reliability operation on the first memory area of the nonvolatile memory device based on the first reliability interval.