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21.发明授权公开(公告)号：US11634628B2
公开(公告)日：2023-04-25
申请号：US16519188
申请日：2019-07-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jihyun Min , Seon-Yeong Kim , Eun Joo Jang , Hyo Sook Jang , Soo Kyung Kwon , Yong Wook Kim
Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.
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22.发明授权公开(公告)号：US11563143B2
公开(公告)日：2023-01-24
申请号：US16998262
申请日：2020-08-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Seok Han , Sung Woo Kim , Jin A Kim , Tae Hyung Kim , Kun Su Park , Yuho Won , Jeong Hee Lee , Eun Joo Jang , Hyo Sook Jang
Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.
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公开(公告)号：US11512252B2
公开(公告)日：2022-11-29
申请号：US15251643
申请日：2016-08-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Garam Park , Eun Joo Jang , Yongwook Kim , Jihyun Min , Hyo Sook Jang , Shin Ae Jun , Taekhoon Kim , Yuho Won
Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.
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公开(公告)号：US11193062B2
公开(公告)日：2021-12-07
申请号：US16825293
申请日：2020-03-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Garam Park , Tae Gon Kim , Nayoun Won , Shin Ae Jun , Soo Kyung Kwon , Seon-Yeong Kim , Shang Hyeun Park , Jooyeon Ahn , Yuho Won , Eun Joo Jang , Hyo Sook Jang
IPC: C09K11/88 , C09K11/62 , C09K11/70 , C09K11/56 , C09K11/02 , H01L27/32 , F21V8/00 , G02F1/1335 , G02F1/13357 , H05B33/14 , A61B6/06 , A61B6/00 , G01T7/00 , G21K1/02 , B82Y20/00 , B82Y40/00 , A61B6/02
Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.
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25.发明授权公开(公告)号：US10590340B2
公开(公告)日：2020-03-17
申请号：US16245728
申请日：2019-01-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Hyo Sook Jang , Yuho Won , Sungwoo Hwang , Ji Yeong Kim , Eun Joo Jang
IPC: C09K11/08 , C08L57/10 , G02F1/1335 , H01L51/50 , H01L27/32 , C09D133/00 , C08F220/06 , C09D133/02 , B82Y20/00 , B82Y40/00
Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.
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Patent Agency Ranking
公开(公告)号：US10191326B2
公开(公告)日：2019-01-29
申请号：US15366579
申请日：2016-12-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Chul Ho Jung , Hyun A Kang , Soo Kyung Kwon , Won Joo Lee , Eun Joo Jang , Hyo Sook Jang , Shin Ae Jun , Oul Cho , In Taek Han
IPC: G02F1/13357 , G02F1/1335 , F21V8/00
Abstract: A film for a backlight unit including a semiconductor nanocrystal-polymer composite film including a semiconductor nanocrystal and a matrix polymer in which the semiconductor nanocrystal is dispersed, wherein the matrix polymer is a polymer produced by a polymerization of a multifunctional photo-curable oligomer, a mono-functional photo-curable monomer, and a multifunctional photo-curable cross-linking agent, the multifunctional photo-curable oligomer has an acid value of less than or equal to about 0.1 mg of KOH/g, and a content (A1) of a first structural unit derived from the multifunctional photo-curable oligomer, a content (A2) of a second structural unit derived from the mono-functional photo-curable monomer, and a content (A3) of a third structural unit derived from the multifunctional photo-curable cross-linking agent satisfy Equation 1: A1
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公开(公告)号：US12187942B2
公开(公告)日：2025-01-07
申请号：US18297033
申请日：2023-04-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Wook Kim , Eun Joo Jang , Hyo Sook Jang , Soo Kyung Kwon , Seon-Yeong Kim , Ji-Yeong Kim
IPC: C09K11/88 , C09K11/02 , C09K11/08 , C09K11/56 , F21V8/00 , G02F1/13357 , H10K59/12 , H10K59/38 , B82Y20/00 , B82Y40/00
Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.
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28.发明授权公开(公告)号：US12187939B2
公开(公告)日：2025-01-07
申请号：US18130453
申请日：2023-04-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jihyun Min , Seon-Yeong Kim , Eun Joo Jang , Hyo Sook Jang , Soo Kyung Kwon , Yong Wook Kim
Abstract: A quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core and does not include cadmium, wherein the core includes a Group III-V compound, the quantum dot has a maximum photoluminescence peak in a green light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than about 50 nanometers (nm), and a difference between a wavelength of the maximum photoluminescence peak and a first absorption peak wavelength of the quantum dot is less than or equal to about 25 nanometers, and a production method thereof.
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公开(公告)号：US12016241B2
公开(公告)日：2024-06-18
申请号：US17171008
申请日：2021-02-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Won Sik Yoon , Moon Gyu Han , Kwanghee Kim , Heejae Lee , Eun Joo Jang , Tae Hyung Kim , Hyo Sook Jang
IPC: H10K85/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H10K50/11 , H10K50/115 , H10K50/16 , H10K50/17 , H10K71/00 , H10K101/40 , H10K102/00
CPC classification number: H10K85/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , H10K50/11 , H10K50/115 , H10K50/167 , H10K50/171 , H10K71/00 , H10K2101/40 , H10K2102/331
Abstract: A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the quantum dot layer and the second electrode and including first inorganic nanoparticles and a first organic material, and an electron injection layer disposed between the electron transport layer and the second electrode and including second inorganic nanoparticles and a second organic material, wherein a ratio by weight of an amount of the second organic material to a total amount of the second inorganic nanoparticles and the second organic material in the electron injection layer is less than a ratio by weight of an amount of the first organic material to a total amount of the first inorganic nanoparticles and the first organic material in the electron transport layer. An electronic device including the quantum dot device.
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公开(公告)号：US11746289B2
公开(公告)日：2023-09-05
申请号：US17407260
申请日：2021-08-20
Inventor： Yong Wook Kim , Yong Ju Kwon , Sungjee Kim , Jihyun Min , Yuho Won , Eun Joo Jang , Hyo Sook Jang , Eunjae Lee , Kyuhyun Bang , Anastasia Agnes , Jeongmin Kim
CPC classification number: C09K11/72 , C01B25/087 , C09K11/0883 , C09K11/70 , B82Y20/00 , B82Y40/00 , C01P2002/54 , C01P2002/72 , C01P2004/04 , C01P2004/50 , C01P2004/64
Abstract: The invention relates to InP-based nanoclusters that include indium and phosphorus and further include zinc, chlorine, or a combination thereof, and to a method of preparing the InP-based nanoparticles including heating the InP-based nanoclusters in the presence of zinc, chlorine, or a combination thereof.
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