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    Organic transistor and active matrix display
    23.
    发明授权
    Organic transistor and active matrix display 有权
    有机晶体管和有源矩阵显示

    公开(公告)号：US07999253B2

    公开(公告)日：2011-08-16

    申请号：US12067657

    申请日：2007-07-19

    申请人： Takumi Yamaga ,  Ikue Kawashima ,  Yoshikazu Akiyama

    发明人： Takumi Yamaga ,  Ikue Kawashima ,  Yoshikazu Akiyama

    IPC分类号： H01L51/00

    CPC分类号： H01L51/105 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0545

    摘要： An organic transistor is disclosed that has an organic semiconductor layer patterned with high resolution. The organic transistor includes a gate electrode, a gate insulting film, a source electrode, a drain electrode, and an organic semiconductor layer formed of an organic semiconductor material. The gate electrode, the gate insulting film, the source electrode, the drain electrode, and the organic semiconductor layer are formed on a substrate. At least one of the source electrode and the drain electrode has an opening.

    摘要翻译： 公开了一种具有以高分辨率图案化的有机半导体层的有机晶体管。 有机晶体管包括栅电极，栅极绝缘膜，源电极，漏电极和由有机半导体材料形成的有机半导体层。 在基板上形成栅电极，栅极绝缘膜，源电极，漏电极和有机半导体层。 源电极和漏电极中的至少一个具有开口。

    ORGANIC TRANSISTOR AND ACTIVE MATRIX DISPLAY
    24.
    发明申请
    ORGANIC TRANSISTOR AND ACTIVE MATRIX DISPLAY 有权
    有机晶体管和有源矩阵显示

    公开(公告)号：US20090272966A1

    公开(公告)日：2009-11-05

    申请号：US12067657

    申请日：2007-07-19

    申请人： Takumi Yamaga ,  Ikue Kawashima ,  Yoshikazu Akiyama

    发明人： Takumi Yamaga ,  Ikue Kawashima ,  Yoshikazu Akiyama

    IPC分类号： H01L51/52 ,  H01L51/10

    CPC分类号： H01L51/105 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0545

    摘要： An organic transistor is disclosed that has an organic semiconductor layer patterned with high resolution. The organic transistor includes a gate electrode, a gate insulting film, a source electrode, a drain electrode, and an organic semiconductor layer formed of an organic semiconductor material. The gate electrode, the gate insulting film, the source electrode, the drain electrode, and the organic semiconductor layer are formed on a substrate. At least one of the source electrode and the drain electrode has an opening.

    摘要翻译： 公开了一种具有以高分辨率图案化的有机半导体层的有机晶体管。 有机晶体管包括栅电极，栅极绝缘膜，源电极，漏电极和由有机半导体材料形成的有机半导体层。 在基板上形成栅电极，栅极绝缘膜，源电极，漏电极和有机半导体层。 源电极和漏电极中的至少一个具有开口。

    Method of producing thin film transistor
    28.
    发明授权
    Method of producing thin film transistor 失效
    制造薄膜晶体管的方法

    公开(公告)号：US4883766A

    公开(公告)日：1989-11-28

    申请号：US269452

    申请日：1988-11-10

    申请人： Mamoru Ishida ,  Shunichi Inaki ,  Yoshikazu Akiyama ,  Mitsuhiro Kohata

    发明人： Mamoru Ishida ,  Shunichi Inaki ,  Yoshikazu Akiyama ,  Mitsuhiro Kohata

    IPC分类号： H01L27/12 ,  H01L21/30 ,  H01L21/324 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

    CPC分类号： H01L29/66757 ,  H01L21/3003 ,  Y10S438/909

    摘要： A method of producing a thin film transistor comprises the steps of preparing a structure having a substrate, an active layer and a diffusion layer formed on the substrate, and a gate electrode formed on the active layer, forming on the structure an interlayer insulator layer made of a silicon oxide hydrate (SiO.sub.x H.sub.y) having a predetermined composition, forming contact holes in the interlayer insulator layer, forming a wiring layer on the interlayer insulator layer, and carrying out a thermal process thereby diffusing hydrogen atoms within the interlayer insulator layer into at least the active layer and the diffusion layer.

    摘要翻译： 制造薄膜晶体管的方法包括以下步骤：制备具有衬底，形成在衬底上的有源层和扩散层的结构以及形成在有源层上的栅电极，在该结构上形成层间绝缘体层 的具有预定组成的氧化硅水合物（SiO x H y），在层间绝缘体层中形成接触孔，在层间绝缘体层上形成布线层，并进行热处理，从而使层间绝缘体层内的氢原子至少 有源层和扩散层。