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385 条记录 (耗时 0.046 秒)

    Resist composition and patterning method
    21.
    发明授权
    Resist composition and patterning method 有权
    抗蚀剂组成和图案化方法

    公开(公告)号：US06818148B1

    公开(公告)日：2004-11-16

    申请号：US09401490

    申请日：1999-09-22

    申请人： Satoshi Watanabe ,  Toyohisa Sakurada ,  Yoshitaka Yanagi ,  Shigehiro Nagura ,  Toshinobu Ishihara

    发明人： Satoshi Watanabe ,  Toyohisa Sakurada ,  Yoshitaka Yanagi ,  Shigehiro Nagura ,  Toshinobu Ishihara

    IPC分类号： C09K1300

    CPC分类号： G03F7/0048

    摘要： A resist composition is provided comprising a fluorochemical surfactant which functions to reduce the contact angle of a coating of the resist composition with water or an aqueous base developer as the amount of the fluorochemical surfactant increases. The resist composition forms a coating having a thickness uniformity, free of defects, and wettable with an aqueous base developer when applied onto a substrate, and has a good storage stability in that particles do not increase during storage in solution form.

    摘要翻译： 提供了一种抗蚀剂组合物，其包括含氟化学表面活性剂，其功能是随着含氟表面活性剂的量的增加，抗蚀剂组合物的涂层与水或碱性显影剂水溶液的接触角降低。 抗蚀剂组合物形成具有厚度均匀性，无缺陷的涂层，并且当涂覆在基材上时可用基础显影剂水溶液润湿，并且具有良好的储存稳定性，因为在溶液形式储存期间颗粒不增加。

    Photo acid generator, chemical amplification resist material
    23.
    发明授权
    Photo acid generator, chemical amplification resist material 有权
    照片酸发生器，化学放大抗蚀材料

    公开(公告)号：US07211367B2

    公开(公告)日：2007-05-01

    申请号：US11373925

    申请日：2006-03-13

    申请人： Tomohiro Kobayashi ,  Satoshi Watanabe ,  Tsunehiro Nishi ,  Youichi Ohsawa ,  Katsuhiro Kobayashi

    发明人： Tomohiro Kobayashi ,  Satoshi Watanabe ,  Tsunehiro Nishi ,  Youichi Ohsawa ,  Katsuhiro Kobayashi

    IPC分类号： G03F7/031

    CPC分类号： G03F7/0045 ,  C07D327/06 ,  G03F7/0395 ,  G03F7/0397 ,  G03F7/0758

    摘要： A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer

    摘要翻译： 提供了包含酸产生器的高分辨率抗蚀剂材料，从而获得了300nm以下的高能量射线的高灵敏度和高分辨率，小的线边缘粗糙度，以及热稳定性和储存稳定性方面的优异性。 此外，提供了使用该抗蚀剂材料的图案形成方法。 具体地，下述通式（1）的新化合物; 以及优选含有该化合物作为光酸发生剂的正性抗蚀剂材料和基础树脂; 被提供。 该正性抗蚀剂材料可含有碱性化合物或溶解抑制剂。 此外，本发明提供了一种图案形成方法，包括以下步骤：将该正性抗蚀剂材料涂布在基板上，然后对该材料进行热处理，通过照片将经处理的材料暴露于波长为300nm以下的高能量射线 掩模，任选地热处理暴露的材料，以及使用显影剂显影材料

    Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process
    24.
    发明授权
    Sulfonium salt, polymer, method for producing the polymer, resist composition and patterning process 有权
    锍盐，聚合物，聚合物的制造方法，抗蚀剂组合物和图案化工艺

    公开(公告)号：US08691490B2

    公开(公告)日：2014-04-08

    申请号：US13013506

    申请日：2011-01-25

    申请人： Masaki Ohashi ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Keiichi Masunaga ,  Takeshi Kinsho

    发明人： Masaki Ohashi ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Keiichi Masunaga ,  Takeshi Kinsho

    IPC分类号： G03F7/004 ,  C07C69/54 ,  C07C309/67

    CPC分类号： C07C69/54 ,  C08F220/38 ,  G03F7/004 ,  G03F7/20

    摘要： There is disclosed a sulfonium salt represented by the following general formula (1). In the formula, X and Y each represents a group having a polymerizable functional group; Z represents a divalent hydrocarbon group having 1 to 33 carbon atoms optionally containing a hetero atom; R1 represents a divalent hydrocarbon group having 1 to 36 carbon atoms optionally containing a hetero atom; and R2 and R3 each represents a monovalent hydrocarbon group having 1 to 30 carbon atoms optionally containing a hetero atom or R2 and R3 may be bonded with each other to form a ring together with a sulfur atom in the formula. There can be provided a sulfonium salt usable as a resist composition providing high resolution and excellent in LER in photolithography using a high energy beam such as an ArF excimer laser, an EUV light and an electron beam as a light source, a polymer obtained from the sulfonium salt, a resist composition containing the polymer and a patterning process using the resist composition.

    摘要翻译： 公开了由以下通式（1）表示的锍盐。 在该式中，X和Y各自表示具有聚合性官能团的基团， Z表示任选含有杂原子的碳原子数1〜33的二价烃基; R1表示任选含有杂原子的碳原子数1〜36的二价烃基; R 2和R 3各自表示可以含有杂原子的具有1〜30个碳原子的一价烃基，或者R 2和R 3可以相互结合，与式中的硫原子一起形成环。 可以提供可用作抗蚀剂组合物的锍盐，其使用诸如ArF准分子激光器，EUV光和电子束作为光源的高能束在光刻中提供高分辨率和优异的LER，从 锍盐，含有聚合物的抗蚀剂组合物和使用该抗蚀剂组合物的图案化工艺。

    Chemically-amplified positive resist composition and patterning process thereof
    28.
    发明申请
    Chemically-amplified positive resist composition and patterning process thereof 有权
    化学扩增的正型抗蚀剂组合物及其构图工艺

    公开(公告)号：US20100009286A1

    公开(公告)日：2010-01-14

    申请号：US12457327

    申请日：2009-06-08

    申请人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

    发明人： Takanobu Takeda ,  Satoshi Watanabe ,  Youichi Ohsawa ,  Masaki Ohashi ,  Takeshi Kinsho

    IPC分类号： G03F7/004 ,  G03F7/20

    CPC分类号： G03F7/0395 ,  G03F7/0045 ,  G03F7/0392 ,  Y10S430/114

    摘要： There is disclosed a chemically-amplified positive resist composition comprising, as main components, (A) a base polymer, which contains one or more kinds of a monomer unit represented by the following general formula (1) and the like, and is an alkali-insoluble polymer whose hydroxyl group is partly protected by an acetal group while alkali-soluble when deprotected by an acid catalyst, (B) a sulfonium salt containing a sulfonate anion, (C) a basic component, and (D) an organic solvent. In a lithography technology by a photo resist, an extremely high temporal stability is necessary. In addition, it must give a good pattern profile not dependent on a substrate and have a high resolution power. There can be provided a chemically-amplified positive resist composition which can solve these problems simultaneously, a resist patterning process using the same, and a method for producing a photo mask blank.

    摘要翻译： 公开了一种化学增幅正型抗蚀剂组合物，其包含作为主要成分的（A）基质聚合物，其包含一种或多种由以下通式（1）表示的单体单元等，并且为碱 （B）含有磺酸根阴离子的锍盐，（C）碱性成分和（D）有机溶剂，其羟基部分被缩醛基保护而碱溶性的不溶性聚合物。 在通过光刻胶的光刻技术中，需要非常高的时间稳定性。 另外，它必须给出不依赖于衬底并且具有高分辨率功率的良好图案轮廓。 可以提供能够同时解决这些问题的化学放大正性抗蚀剂组合物，使用其的抗蚀剂图案形成工艺以及制造光掩模坯料的方法。

    Chemically amplified positive resist composition and patterning process
    30.
    发明授权
    Chemically amplified positive resist composition and patterning process 有权
    化学扩增正性抗蚀剂组成和图案化工艺

    公开(公告)号：US07335458B2

    公开(公告)日：2008-02-26

    申请号：US11354204

    申请日：2006-02-15

    申请人： Youichi Ohsawa ,  Kazunori Maeda ,  Satoshi Watanabe

    发明人： Youichi Ohsawa ,  Kazunori Maeda ,  Satoshi Watanabe

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    摘要： A chemically amplified positive resist composition is provided comprising (A) a resin containing acid labile groups other than acetal type which changes its solubility in an alkaline developer as a result of the acid labile groups being eliminated under the action of acid and (B) specific sulfonium salts as a photoacid generator.The composition is improved in resolution and focus latitude, minimized in line width variation and profile degradation even on prolonged PED, improved in pattern profile after development, minimized in pattern feature size variation within the wafer plane by uneven development and thus best suited in the deep-UV lithography.

    摘要翻译： 提供一种化学放大正性抗蚀剂组合物，其包含（A）除了缩醛型以外的酸不稳定基团的树脂，其在酸性作用下由于酸不稳定基团被消除而改变其在碱性显影剂中的溶解度，（B）具体 锍盐作为光致酸发生剂。 组合物在分辨率和对焦纬度方面得到改善，即使在长时间的PED下也减少了线宽变化和轮廓退化，改善了显影后的图案轮廓，通过不平坦的发展使晶片平面内的图案特征尺寸变化最小化，因此最适合于深度 -UV光刻。