公开(公告)号：US20060124929A1

公开(公告)日：2006-06-15

申请号：US11291955

申请日：2005-12-02

申请人： Shigeru Nishimura ,  Seiichi Tamura ,  Hiroshi Yuzurihara

发明人： Shigeru Nishimura ,  Seiichi Tamura ,  Hiroshi Yuzurihara

IPC分类号： H01L31/0376

CPC分类号： H01L27/146 ,  H01L27/14698 ,  H01L31/03682 ,  H01L31/182 ,  Y02P70/521

摘要： A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a thickness of 0.5-2.0, on a rear surface of the pixel area-bearing surface, and having an oxygen concentration of 1.3-1.5E+18 atom/cm3 (old ASTM).

摘要翻译： 一种用于形成像素区域的半导体衬底，其具有多个用于光电转换的像素，所述半导体衬底包括厚度为0.5-2.0的多晶硅膜，在像素区域承载表面的后表面上，并且具有 氧浓度为1.3E18-1.5E18原子/ cm 3（旧ASTM）。

公开(公告)号：US20060208160A1

公开(公告)日：2006-09-21

申请号：US11369819

申请日：2006-03-08

申请人： Ryuichi Mishima ,  Seiichi Tamura ,  Koichi Tazoe

发明人： Ryuichi Mishima ,  Seiichi Tamura ,  Koichi Tazoe

IPC分类号： H01L27/00

CPC分类号： H01L27/14689 ,  H01L27/14601 ,  H04N5/35581 ,  H04N5/37452 ,  H04N5/378

摘要： The solid state image pickup device includes a pixel, the pixel including: a photoelectric conversion region for generating carrier by photoelectric conversion and accumulating the carrier; a carrier holding region for accumulating carrier flowing out from the photoelectric conversion region during the photoelectric conversion region generates and accumulates carrier; a source follower amplifier SF-MOS for amplifying carrier; a transfer MOS transistor Tx-MOS for transferring the carrier accumulated in the photoelectric conversion region to the source follower amplifier SF-MOS; and a transfer MOS transistor Ty-MOS for transferring the carrier accumulated in the carrier holding region to the source follower amplifier SF-MOS. The carrier holding region is formed so as to have a trench structure.

摘要翻译： 固态摄像装置包括像素，该像素包括：光电转换区域，用于通过光电转换产生载体并累积载体; 载流子保持区域，用于在光电转换区域产生并积累载流子的同时积聚从光电转换区域流出的载流子; 用于放大载波的源极跟随器放大器SF-MOS; 用于将积累在光电转换区域中的载流子传送到源极跟随器放大器SF-MOS的转移MOS晶体管Tx-MOS; 以及用于将载波保持区域中累积的载波传送到源极跟随器放大器SF-MOS的转移MOS晶体管Ty-MOS。 载流子保持区域形成为具有沟槽结构。

公开(公告)号：US20090130782A1

公开(公告)日：2009-05-21

申请号：US12266725

申请日：2008-11-07

申请人： Masatsugu Itahashi ,  Kouhei Hashimoto ,  Nobuhiko Sato ,  Seiichi Tamura ,  Hiroshi Yuzurihara

发明人： Masatsugu Itahashi ,  Kouhei Hashimoto ,  Nobuhiko Sato ,  Seiichi Tamura ,  Hiroshi Yuzurihara

IPC分类号： H01L21/66 ,  H01L21/67

CPC分类号： H01L22/12 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is provided for manufacturing a semiconductor device that includes a multilayer wiring structure in which insulating layers and wiring layers each with a plurality of conductor lines are alternately stacked on each other. The method includes steps of forming a first wiring layer on a first insulating layer, detecting a defect in the first wiring layer on the first insulating layer, and determining whether or not the defect is to be irradiated with a focused ion beam, according to a detection result. If it is determined that the defect is to be irradiated, the defect is irradiated with a focused ion beam and then a second insulating layer is formed on the first wiring layer disposed on the first insulating layer. If it is determined that the defect is not to be irradiated with a focused ion beam, the second insulating layer is formed on the first wiring layer disposed on the first insulating layer without irradiating the defect.

摘要翻译： 提供一种用于制造半导体器件的方法，该半导体器件包括多层布线结构，其中每个具有多条导体线的绝缘层和布线层彼此交替堆叠。 该方法包括以下步骤：在第一绝缘层上形成第一布线层，检测第一绝缘层上的第一布线层中的缺陷，以及确定是否要用聚焦离子束照射缺陷，根据 检测结果。 如果确定要照射缺陷，则用聚焦离子束照射缺陷，然后在布置在第一绝缘层上的第一布线层上形成第二绝缘层。 如果确定不用聚焦离子束照射缺陷，则在不照射缺陷的情况下，在布置在第一绝缘层上的第一布线层上形成第二绝缘层。

公开(公告)号：US07205523B2

公开(公告)日：2007-04-17

申请号：US11369819

申请日：2006-03-08

申请人： Ryuichi Mishima ,  Seiichi Tamura ,  Koichi Tazoe

发明人： Ryuichi Mishima ,  Seiichi Tamura ,  Koichi Tazoe

IPC分类号： H01L27/00 ,  H01L31/00

CPC分类号： H01L27/14689 ,  H01L27/14601 ,  H04N5/35581 ,  H04N5/37452 ,  H04N5/378

摘要： The solid state image pickup device includes a pixel, the pixel including: a photoelectric conversion region for generating carrier by photoelectric conversion and accumulating the carrier; a carrier holding region for accumulating carrier flowing out from the photoelectric conversion region during the photoelectric conversion region generates and accumulates carrier; a source follower amplifier SF-MOS for amplifying carrier; a transfer MOS transistor Tx-MOS for transferring the carrier accumulated in the photoelectric conversion region to the source follower amplifier SF-MOS; and a transfer MOS transistor Ty-MOS for transferring the carrier accumulated in the carrier holding region to the source follower amplifier SF-MOS. The carrier holding region is formed so as to have a trench structure.

摘要翻译： 固态摄像装置包括像素，该像素包括：光电转换区域，用于通过光电转换产生载体并累积载体; 载流子保持区域，用于在光电转换区域产生并积累载流子的同时积聚从光电转换区域流出的载流子; 用于放大载波的源极跟随器放大器SF-MOS; 用于将积累在光电转换区域中的载流子传送到源极跟随器放大器SF-MOS的转移MOS晶体管Tx-MOS; 以及用于将载波保持区域中累积的载波传送到源极跟随器放大器SF-MOS的转移MOS晶体管Ty-MOS。 载流子保持区域形成为具有沟槽结构。

公开(公告)号：US08184189B2

公开(公告)日：2012-05-22

申请号：US12623747

申请日：2009-11-23

申请人： Seiichi Tamura

发明人： Seiichi Tamura

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/335 ,  H01L27/14623 ,  H04N5/361

摘要： The image sensing device includes a semiconductor substrate; a light shielding layer that is arranged above the semiconductor substrate and shields an optical black region and a peripheral region from light; a first capacitance element that is arranged between the light shielding layer in the peripheral region and the semiconductor substrate and is used to temporarily hold signals output from effective pixels or optical black pixels; and a second capacitance element that is arranged between the light shielding layer in the optical black region and the semiconductor substrate so as to shield the photoelectric conversion units of the optical black pixels from light.

摘要翻译： 图像感测装置包括半导体衬底; 遮光层，其设置在所述半导体基板的上方，并遮蔽光的黑色区域和周边区域。 布置在外围区域的遮光层和半导体衬底之间的第一电容元件，用于临时保持从有效像素或光学黑色像素输出的信号; 以及布置在所述光学黑色区域中的所述遮光层和所述半导体衬底之间以遮蔽所述光学黑色像素的光电转换单元的光的第二电容元件。

公开(公告)号：US09236410B2

公开(公告)日：2016-01-12

申请号：US13473455

申请日：2012-05-16

申请人： Aiko Kato ,  Kouhei Hashimoto ,  Seiichi Tamura

发明人： Aiko Kato ,  Kouhei Hashimoto ,  Seiichi Tamura

IPC分类号： H01L31/18 ,  H01L31/0216 ,  H01L27/146

CPC分类号： H01L27/14623 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14656 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/357

摘要： In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.

摘要翻译： 在包括光电转换部分，载体保持部分和多个晶体管的像素的固态图像拾取装置中，固态图像拾取装置还包括设置在光电转换部分上的第一绝缘膜， 载流子保持部和所述多个晶体管，布置在所述第一绝缘膜的开口中并且被定位成连接到所述多个晶体管中的一个或多个的源极或漏极的导体，以及设置在所述多个晶体管中的光屏蔽膜 开口或第一绝缘膜的凹部并且定位在载体保持部分上方。

公开(公告)号：US20120300102A1

公开(公告)日：2012-11-29

申请号：US13473460

申请日：2012-05-16

申请人： Seiichi Tamura ,  Mayu Ishikawa ,  Aiko Kato ,  Masatsugu Itahashi ,  Kouhei Hashimoto

发明人： Seiichi Tamura ,  Mayu Ishikawa ,  Aiko Kato ,  Masatsugu Itahashi ,  Kouhei Hashimoto

IPC分类号： H04N5/335 ,  H01L31/18 ,  H01L27/148

CPC分类号： H01L27/14607 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14627

摘要： In a photoelectric conversion apparatus including a plurality of focus detection pixels, each focus detection pixel including a photoelectric conversion element, the photoelectric conversion element having a light receiving surface, and a plurality of wiring layers to read a signal supplied by the photoelectric conversion element, the photoelectric conversion apparatus further includes a light shielding film covering a part of the photoelectric conversion element and having the lower surface positioned closer to a plane, which includes a light receiving surface of the photoelectric conversion element and which is parallel to the light receiving surface, than a lower surface of the lowermost one of the plurality of wiring layers.

摘要翻译： 在包括多个焦点检测像素的光电转换装置中，每个焦点检测像素包括光电转换元件，具有光接收表面的光电转换元件和用于读取由光电转换元件提供的信号的多个布线层， 光电转换装置还包括覆盖光电转换元件的一部分并且具有更靠近平面的下表面的遮光膜，该平面包括光电转换元件的光接收表面并且平行于光接收表面， 而不是多个布线层中的最下面的下表面。

公开(公告)号：US07592579B2

公开(公告)日：2009-09-22

申请号：US12341385

申请日：2008-12-22

申请人： Seiichi Tamura ,  Tetsuya Itano

发明人： Seiichi Tamura ,  Tetsuya Itano

IPC分类号： H01L27/00

CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14689

摘要： A photoelectric conversion device manufacturing method comprises: a first implantation step of implanting impurity ions of a first conductivity type into an underlying substrate via a region of the oxide film exposed by an opening, thereby forming a first semiconductor region having a first thickness in the element region; an the oxidation step of oxidizing the region of the oxide film exposed by the opening, thereby thickening the exposed region; an the exposure step of exposing a region of the oxide film which is not exposed by the opening; a the second implantation step of, after the exposure step, implanting the impurity ions of the first conductivity type into the underlying substrate via a region unthickened in the oxidation step, thereby forming a second semiconductor region having a second thickness larger than the first thickness in the element isolation region; and an the element formation step.

摘要翻译： 一种光电转换装置的制造方法，包括：第一注入工序，通过由开口露出的氧化膜的区域，将第一导电型杂质离子注入到下层基板中，由此在元件中形成具有第一厚度的第一半导体区域 地区; 氧化步骤，氧化由开口暴露的氧化膜的区域，从而使曝光区域变厚; 曝光步骤，曝光所述氧化膜的未被所述开口暴露的区域; 第二注入步骤，在曝光步骤之后，通过在氧化步骤中未被凸起的区域将第一导电类型的杂质离子注入到下面的衬底中，从而形成具有大于第一厚度的第二厚度的第二半导体区域 元件隔离区; 和元件形成步骤。

公开(公告)号：US06382775B1

公开(公告)日：2002-05-07

申请号：US08671368

申请日：1996-06-27

申请人： Masahiko Kubota ,  Hiroshi Sugitani ,  Shigeyuki Matsumoto ,  Masami Ikeda ,  Yasuhiro Naruse ,  Kenji Makino ,  Teruo Ozaki ,  Masaaki Okada ,  Seiichi Tamura

发明人： Masahiko Kubota ,  Hiroshi Sugitani ,  Shigeyuki Matsumoto ,  Masami Ikeda ,  Yasuhiro Naruse ,  Kenji Makino ,  Teruo Ozaki ,  Masaaki Okada ,  Seiichi Tamura

IPC分类号： B41J205

CPC分类号： B41J2/1642 ,  B41J2/14129 ,  B41J2/1604 ,  B41J2/1631 ,  B41J2/1646 ,  B41J2202/13

摘要： A printing head is intended to achieve high reliability and a production method of the printing head is intended to achieve high yield at low cost. A liquid ejecting printing head employs a base body, in which an electrothermal transducer element, a driving functional element for driving the electrothermal transducer element, a wiring electrode connecting between the electrothermal transducer element and the driving functional element, and an insulation layer provided on the wiring electrode are formed on a substrate. The electrothermal transducer element has a heat generating resistor formed of a material selected from the group consisting TaN, HfB2, Poly-Si, Ta—Al, Ta—Ir, Au and Ag. A protective layer above the heat generating body is formed of an insulative compound deposited to be low density to high density in order. The protective layer is formed by depositing the insulative material in the electrothermal transducer element or the wiring electrode with elevating the temperature of the base body from low temperature to high temperature.

摘要翻译： 打印头旨在实现高可靠性，并且打印头的制造方法旨在以低成本实现高产率。 液体喷射打印头采用基体，其中电热转换元件，用于驱动电热转换元件的驱动功能元件，连接在电热换能器元件和驱动功能元件之间的布线电极以及设在其上的绝缘层 布线电极形成在基板上。 电热转换元件具有由选自TaN，HfB 2，Poly-Si，Ta-Al，Ta-Ir，Au和Ag的材料形成的发热电阻体。 发热体上方的保护层由沉积成低密度至高密度的绝缘化合物形成。 通过将基体的温度从低温升高到高温，将绝缘材料沉积在电热换能器元件或布线电极中来形成保护层。

公开(公告)号：US06375312B1

公开(公告)日：2002-04-23

申请号：US08819366

申请日：1997-03-17

申请人： Masami Ikeda ,  Hiroshi Sugitani ,  Shigeyuki Matsumoto ,  Yasuhiro Naruse ,  Kenji Makino ,  Masaaki Izumida ,  Seiichi Tamura

发明人： Masami Ikeda ,  Hiroshi Sugitani ,  Shigeyuki Matsumoto ,  Yasuhiro Naruse ,  Kenji Makino ,  Masaaki Izumida ,  Seiichi Tamura

IPC分类号： B41J205

CPC分类号： B41J2/14072 ,  B41J2/14129 ,  B41J2202/03

摘要： A heat generating resistor comprised of a film composed of a TaN0.8-containing tantalum nitride material which is hardly deteriorated and is hardly varied in terms of the resistance value even upon continuous application of a relatively large quantity of an electric power thereto over a long period of time. A substrate for a liquid jet head comprising a support member and an electrothermal converting body disposed above said support member, said electrothermal converting body including a heat generating resistor layer capable of generating a thermal energy and electrodes being electrically connected to said heat generating resistor layer, said electrodes being capable of supplying an electric signal for demanding to generate said thermal energy to said heat generating resistor layer, characterized in that said heat generating resistor layer comprises a film composed of a TaN0.8-containing tantalum nitride material. A liquid jet head provided with said substrate for a liquid jet head. A liquid jet apparatus provided with said liquid jet head.

摘要翻译： 一种发热电阻器，由由几乎不劣化的含TaN0.8的氮化钽材料构成的膜构成，并且即使长时间连续施加较大量的电力也难以在电阻值方面变化 一段的时间。 一种液体喷射头用基板，其特征在于，包括支撑部件和设置在所述支撑部件上方的电热转换体，所述电热转换体包括能够产生热能的发热电阻层，与所述发热电阻层电连接的电极， 所述电极能够提供用于要求向所述发热电阻层产生所述热能的电信号，其特征在于，所述发热电阻层包括由含TaN0.8的氮化钽材料构成的膜。 一种具有用于液体喷射头的所述基底的液体喷射头。 设有所述喷液头的液体喷射装置。