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    INFORMATION TERMINAL
    21.
    发明申请
    INFORMATION TERMINAL 有权

    公开(公告)号：US20210280152A1

    公开(公告)日：2021-09-09

    申请号：US17186268

    申请日：2021-02-26

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuki Okamoto

    IPC: G09G5/10 ,  G09G3/36 ,  H01L27/32 ,  G02F1/1335 ,  G02F1/1368 ,  G09G3/3233 ,  H01L51/00

    Abstract: An information terminal capable of automatically adjusting the brightness of a display portion in accordance with bending of the display portion is provided. The information terminal includes a display portion that includes a first pixel, a second pixel, and a sensor element. The first pixel includes a liquid crystal element. The second pixel includes a light-emitting element. The sensor element includes a first bend sensor whose resistance is changed in accordance with bending of the display portion in a convex direction and a second bend sensor whose resistance is changed in accordance with bending of the display portion in a concave direction. The luminance of the light-emitting element is controlled in accordance with an output of the sensor element.

    Operation method of electronic device
    22.
    发明授权
    Operation method of electronic device 有权

    公开(公告)号：US10482833B2

    公开(公告)日：2019-11-19

    申请号：US15805589

    申请日：2017-11-07

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuki Okamoto

    IPC: G09G3/36 ,  G09G3/32 ,  G09G3/30 ,  G09G3/20

    Abstract: An operation method of a display device with high visibility is to be provided. The display device is an electronic device including a first display element, a second display element, an optical sensor, and a gain calculation circuit. In the electronic device, the illuminance of external light is obtained with the optical sensor, and depending on the illuminance, images displayed using the first display element and the second display element are corrected. The gain calculation circuit obtains the illuminance and calculates a gain value depending on the illuminance. In particular, the gain value is calculated for each of the first display element and the second display element. Furthermore, the gain calculation circuit performs dimming and toning on image data displayed using the first display element and the second display element by multiplying the image data by the gain values or values corresponding to the gain values.

    Information terminal
    23.
    发明授权
    Information terminal 有权

    公开(公告)号：US10380956B2

    公开(公告)日：2019-08-13

    申请号：US15627497

    申请日：2017-06-20

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Yuki Okamoto

    IPC: H01L29/78 ,  H01L27/12 ,  G09G3/36 ,  G09G3/3233 ,  H01L27/32 ,  H01L29/786

    Abstract: An information terminal capable of switching display and non-display of images by strain. The information terminal includes a display portion and a strain sensor. The display portion includes a liquid crystal element, a light-emitting element, and a first and a second transistors. The strain sensor includes a strain sensor element and a resistor. The first transistor has a function of controlling current flowing into the light-emitting element. The strain sensor element has a function as a variable resistor. A first terminal of the strain sensor element is electrically connected to a first terminal of the resistor. A gate of the first transistor is electrically connected to a first terminal of the strain sensor element via the second transistor.

    Data comparison circuit and semiconductor device
    24.
    发明授权
    Data comparison circuit and semiconductor device 有权

    公开(公告)号：US10305460B2

    公开(公告)日：2019-05-28

    申请号：US15432002

    申请日：2017-02-14

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuki Okamoto ,  Yoshiyuki Kurokawa

    IPC: H03K5/22 ,  H03K5/24 ,  G11C11/401 ,  G11C15/04 ,  H03M1/66

    Abstract: A semiconductor device that enables a memory size reduction is provided. The semiconductor device includes a converter circuit, a memory circuit, and a detection circuit. The converter circuit has a function of converting first data that includes a digital voltage value to second data that includes an analog current value. The memory circuit has a function of storing third data that includes an analog current value. The detection circuit has a function of generating data that indicates whether the analog current values of the second and third data match.

    Semiconductor device, electronic component, and electronic device
    26.
    发明授权
    Semiconductor device, electronic component, and electronic device 有权

    公开(公告)号：US09876499B2

    公开(公告)日：2018-01-23

    申请号：US15279594

    申请日：2016-09-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Munehiro Kozuma ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Takeshi Aoki ,  Yuki Okamoto

    IPC: H03K19/177 ,  H03K19/00 ,  H03K19/0948

    CPC classification number: H03K19/0013 ,  H03K19/0948 ,  H03K19/17728 ,  H03K19/1776

    Abstract: A semiconductor device suitable for low-voltage driving. The semiconductor device includes a first transistor, a second transistor, a power supply line, a circuit, and a memory circuit. The first transistor controls electrical continuity between the circuit and the power supply line. The memory circuit stores data for setting a gate potential of the first transistor. The second transistor controls electrical continuity between an output node of the memory circuit and a gate of the first transistor. The second transistor is a transistor with an ultralow off-state current, for example, an oxide semiconductor transistor. In a period for operating the circuit, a first potential is input to the power supply line and the second transistor is turned off. In a period for updating the gate potential of the first transistor, a second potential is input to the power supply line. The second potential is higher than the first potential.

    Semiconductor device
    27.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US09793905B2

    公开(公告)日：2017-10-17

    申请号：US14925161

    申请日：2015-10-28

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuki Okamoto ,  Yoshiyuki Kurokawa

    IPC: H03L7/099 ,  H03K3/03 ,  H01L27/1156

    CPC classification number: H03L7/099 ,  H01L27/1156 ,  H03K3/0315

    Abstract: An object of the present invention is to provide a semiconductor device including an oscillator circuit including a circuit between inverters. In the circuit, a sum of the length (a1) of a wiring path between a terminal A and a terminal C1 and a length (b1) of a wiring path between a terminal D1 and a terminal B is substantially equal to a sum of the length (a2) of a wiring path between the terminal A and a terminal C2 and the length (b2) of a wiring path between a terminal D2 and the terminal B.

    Imaging device and electronic device
    28.
    发明授权
    Imaging device and electronic device 有权
    成像设备和电子设备

    公开(公告)号：US09576994B2

    公开(公告)日：2017-02-21

    申请号：US14837040

    申请日：2015-08-27

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiroki Inoue ,  Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Yuki Okamoto

    IPC: H01L27/146 ,  H01L29/786 ,  H01L29/10

    CPC classification number: H01L27/14612 ,  H01L27/14632 ,  H01L27/14643 ,  H01L29/7869

    Abstract: An imaging device capable of obtaining high-quality imaging data is provided. The imaging device includes a first circuit and a second circuit. The first circuit includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, a first capacitor, a second capacitor, and a third capacitor. The second circuit includes an eighth transistor. Variation in threshold voltage of an amplifier transistor (the fifth transistor) included in the first circuit can be compensated.

    Abstract translation: 提供能够获得高质量成像数据的成像装置。 成像装置包括第一电路和第二电路。 第一电路包括光电转换元件，第一晶体管，第二晶体管，第三晶体管，第四晶体管，第五晶体管，第六晶体管，第七晶体管，第一电容器，第二电容器和第三电容器。 第二电路包括第八晶体管。 可以补偿包括在第一电路中的放大器晶体管（第五晶体管）的阈值电压的变化。

    Semiconductor device, electronic component, and electronic device
    29.
    发明授权
    Semiconductor device, electronic component, and electronic device 有权
    半导体装置，电子部件和电子装置

    公开(公告)号：US09461646B2

    公开(公告)日：2016-10-04

    申请号：US15007350

    申请日：2016-01-27

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Munehiro Kozuma ,  Takayuki Ikeda ,  Yoshiyuki Kurokawa ,  Takeshi Aoki ,  Yuki Okamoto

    IPC: H03K19/177 ,  H03K19/00 ,  H03K19/0948

    CPC classification number: H03K19/0013 ,  H03K19/0948 ,  H03K19/17728 ,  H03K19/1776

    Abstract: A semiconductor device suitable for low-voltage driving. The semiconductor device includes a first transistor, a second transistor, a power supply line, a circuit, and a memory circuit. The first transistor controls electrical continuity between the circuit and the power supply line. The memory circuit stores data for setting a gate potential of the first transistor. The second transistor controls electrical continuity between an output node of the memory circuit and a gate of the first transistor. The second transistor is a transistor with an ultralow off-state current, for example, an oxide semiconductor transistor. In a period for operating the circuit, a first potential is input to the power supply line and the second transistor is turned off. In a period for updating the gate potential of the first transistor, a second potential is input to the power supply line. The second potential is higher than the first potential.

    Abstract translation: 适用于低压驱动的半导体器件。 半导体器件包括第一晶体管，第二晶体管，电源线，电路和存储器电路。 第一个晶体管控制电路和电源线之间的电气连续性。 存储电路存储用于设置第一晶体管的栅极电位的数据。 第二晶体管控制存储电路的输出节点和第一晶体管的栅极之间的电连续性。 第二晶体管是具有超低截止电流的晶体管，例如氧化物半导体晶体管。 在用于操作电路的时段中，第一电位被输入到电源线并且第二晶体管被截止。 在用于更新第一晶体管的栅极电位的时段中，第二电位被输入到电源线。 第二个潜力高于第一个潜力。

    Semiconductor device and method for driving semiconductor device
    30.
    发明授权
    Semiconductor device and method for driving semiconductor device 有权

    公开(公告)号：US12223904B2

    公开(公告)日：2025-02-11

    申请号：US18569779

    申请日：2022-06-23

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuki Okamoto ,  Tatsuya Onuki ,  Hidetomo Kobayashi ,  Munehiro Kozuma ,  Takanori Matsuzaki ,  Susumu Kawashima ,  Yutaka Okazaki

    IPC: G09G3/3233 ,  H01L27/088 ,  H01L27/12

    Abstract: The invention of the application is the invention regarding a semiconductor device and a method for driving the semiconductor device. The semiconductor device includes first and second transistors, first to fifth switches, first to third capacitors, and a display element. The first transistor (M2) comprises a back gate, a gate of the first transistor is electrically connected to the first switch (M1), the second switch (M3) and the first capacitor (C1) are positioned between the gate of the first transistor and a source of the first transistor, the back gate of the first transistor is electrically connected to the third switch (M4), the second capacitor (C2) is positioned between the back gate of the first transistor and the source of the first transistor, the source of the first transistor is electrically connected to the fourth switch (M6) and a drain of the second transistor (M5), a gate of the second transistor is electrically connected to the fifth switch (M7), the third capacitor (C3) is positioned between the gate of the second transistor and a source of the second transistor, and the source of the second transistor is electrically connected to the display element (61).

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