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    Method of preparing graphene shell and graphene shell prepared using the method
    21.
    发明授权
    Method of preparing graphene shell and graphene shell prepared using the method 有权
    使用该方法制备石墨烯壳和石墨烯壳的方法

    公开(公告)号：US08663591B2

    公开(公告)日：2014-03-04

    申请号：US12131703

    申请日：2008-06-02

    申请人： Seon-mi Yoon ,  Jae-young Choi ,  Hyeon-Jin Shin

    发明人： Seon-mi Yoon ,  Jae-young Choi ,  Hyeon-Jin Shin

    IPC分类号： C01B31/00 ,  C01B31/04 ,  D01C5/00 ,  D01F9/12 ,  B05D3/02

    CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B3/0021 ,  C01B32/15 ,  C01B32/18 ,  C01B32/184 ,  C01B2204/02 ,  C01B2204/04 ,  Y02E60/325

    摘要： Provided are a method of preparing a graphene shell and a graphene shell prepared using the method. A first heat treatment is performed on a mixture of an organic solvent and a graphitization catalyst so as to carburize the graphitization catalyst with carbon decomposed from the organic solvent. The graphitization catalyst is in the form of particles. A second heat treatment process is performed on the carburized graphitization catalyst in an inert or reductive gas atmosphere to thereby form graphene shells on surfaces of the carburized graphitization catalyst.

    摘要翻译： 提供了一种制备石墨烯壳和使用该方法制备的石墨烯壳的方法。 对有机溶剂和石墨化催化剂的混合物进行第一次热处理，以便用有机溶剂分解的碳对石墨化催化剂进行渗碳。 石墨化催化剂是颗粒的形式。 在惰性或还原性气体气氛中对渗碳石墨化催化剂进行第二热处理工艺，从而在渗碳石墨化催化剂的表面上形成石墨烯壳。

    Method of forming nano dots, method of fabricating the memory device including the same, charge trap layer including the nano dots and memory device including the same
    28.
    发明授权
    Method of forming nano dots, method of fabricating the memory device including the same, charge trap layer including the nano dots and memory device including the same 有权
    形成纳米点的方法，制造包括该纳米点的存储器件的方法，包括纳米点的电荷陷阱层和包括其的存储器件

    公开(公告)号：US08748968B2

    公开(公告)日：2014-06-10

    申请号：US12081357

    申请日：2008-04-15

    申请人： Jae-young Choi ,  Hyeon-jin Shin ,  Seon-mi Yoon

    发明人： Jae-young Choi ,  Hyeon-jin Shin ,  Seon-mi Yoon

    IPC分类号： H01L21/336

    CPC分类号： H01L29/42332 ,  B82Y10/00 ,  G11C11/5671 ,  G11C2216/06 ,  H01L21/28273 ,  H01L29/1606 ,  H01L29/7781 ,  H01L29/7881 ,  Y10T428/26

    摘要： Provided are a method of forming nano dots, method of fabricating a memory device including the same, charge trap layer including the nano dots and memory device including the same. The method of forming the nano dots may include forming cores, coating surfaces of the cores with a polymer, and forming graphene layers covering the surfaces of the cores by thermally treating the cores coated with the polymer. Also, the cores may be removed after forming the graphene layers. In addition, the surfaces of the cores may be coated with a graphitization catalyst material before coating the cores with the polymer. Also, the cores may include metal particles that trap charges and may also function as a graphitization catalyst.

    摘要翻译： 提供了形成纳米点的方法，制造包括该纳米点的存储器件的方法，包括纳米点的电荷陷阱层和包括该纳米点的存储器件。 形成纳米点的方法可以包括形成芯，用聚合物涂覆芯的表面，并且通过热处理涂覆有聚合物的芯，形成覆盖芯的表面的石墨烯层。 此外，可以在形成石墨烯层之后去除芯。 此外，在用聚合物涂覆芯之前，芯的表面可以涂覆有石墨化催化剂材料。 此外，芯可以包括捕获电荷的金属颗粒，并且还可以用作石墨化催化剂。