Semiconductor device and manufacturing method of the same
    21.
    发明申请
    Semiconductor device and manufacturing method of the same 失效
    半导体器件及其制造方法相同

    公开(公告)号:US20050189584A1

    公开(公告)日:2005-09-01

    申请号:US11034920

    申请日:2005-01-14

    申请人: Hajime Matsuda

    发明人: Hajime Matsuda

    摘要: A semiconductor device includes a compound semiconductor substrate, a channel layer provided on the compound semiconductor substrate, a buried layer provided on the channel layer, a first recess formed in the buried layer in an E-mode region, a second recess formed in the first recess in the E-mode region and another second recess formed in the buried layer in a D-mode region, and a gate electrode provided in the second recess in the E-mode region and another gate electrode provided in the second recess in the D-mode region, and a distance between a surface of the buried layer and a bottom of the second recess in the E-mode region is shorter than another distance between another surface of the buried layer and a bottom of said another second recess in the D-mode region.

    摘要翻译: 半导体器件包括化合物半导体衬底,设置在化合物半导体衬底上的沟道层,设置在沟道层上的掩埋层,形成在E模式区域中的掩埋层中的第一凹部,形成在第一 在E模式区域中形成凹陷,在D模式区域中形成在掩埋层中的另一个第二凹槽,以及设置在E模式区域中的第二凹部中的栅极和设置在D模式区域中的第二凹部中的另一个栅电极 并且所述掩埋层的表面与所述E模式区域中的所述第二凹部的底部之间的距离短于所述掩埋层的另一表面与所述另一个第二凹部的D的底部之间的距离 模式区域。

    External illumination apparatus for optical information reading apparatus
    25.
    发明授权
    External illumination apparatus for optical information reading apparatus 有权
    用于光学信息读取装置的外部照明装置

    公开(公告)号:US08714455B2

    公开(公告)日:2014-05-06

    申请号:US13205734

    申请日:2011-08-09

    IPC分类号: G06K7/10

    摘要: There is provided an external illumination apparatus capable of increasing flexibility of illumination, the external illumination apparatus including a CPU and a memory so as to control lighting of a plurality of illumination LEDs with reference to a lighting pattern stored in the memory, wherein this lighting control is executed by a lighting command from an optical information reading apparatus.

    摘要翻译: 提供了一种能够增加照明灵活性的外部照明装置,该外部照明装置包括CPU和存储器,以便参照存储在存储器中的照明模式控制多个照明LED的照明,其中该照明控制 由光信息读取装置的发光指令执行。

    External Illumination Apparatus For Optical Information Reading Apparatus
    26.
    发明申请
    External Illumination Apparatus For Optical Information Reading Apparatus 有权
    用于光学信息读取装置的外部照明装置

    公开(公告)号:US20120068629A1

    公开(公告)日:2012-03-22

    申请号:US13205734

    申请日:2011-08-09

    IPC分类号: H05B37/02

    摘要: There is provided an external illumination apparatus capable of increasing flexibility of illumination, the external illumination apparatus including a CPU and a memory so as to control lighting of a plurality of illumination LEDs with reference to a lighting pattern stored in the memory, wherein this lighting control is executed by a lighting command from an optical information reading apparatus.

    摘要翻译: 提供了一种能够增加照明灵活性的外部照明装置,该外部照明装置包括CPU和存储器,以便参照存储在存储器中的照明模式控制多个照明LED的照明,其中该照明控制 由光信息读取装置的发光指令执行。

    FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME
    27.
    发明申请
    FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME 有权
    场效应晶体管及其制造方法

    公开(公告)号:US20110215383A1

    公开(公告)日:2011-09-08

    申请号:US13104537

    申请日:2011-05-10

    IPC分类号: H01L29/812

    摘要: A method for fabricating a field effect transistor includes: forming an insulating film provided on a semiconductor layer, the insulating film having an opening via which a surface of the semiconductor layer is exposed and including silicon oxide; forming a Schottky electrode on the insulating film and in the opening, the Schottky electrode having an overhang portion and having a first contact layer that is provided in a region contacting the insulating film and contains oxygen, and a second contact layer that is provided on the first contact layer and contains a smaller content of oxygen than that of the first contact layer; and removing the insulating film by a solution including hydrofluoric acid

    摘要翻译: 一种用于制造场效应晶体管的方法,包括:形成设置在半导体层上的绝缘膜,所述绝缘膜具有暴露所述半导体层的表面并且包括氧化硅的开口; 在所述绝缘膜上和所述开口中形成肖特基电极,所述肖特基电极具有突出部分,并且具有设置在与所述绝缘膜接触并包含氧的区域中的第一接触层,以及设置在所述绝缘膜上的第二接触层 第一接触层并且含有比第一接触层的氧更小的氧含量; 并通过包含氢氟酸的溶液除去绝缘膜

    Switch circuit, semiconductor device, and method of manufacturing said semiconductor device
    28.
    发明授权
    Switch circuit, semiconductor device, and method of manufacturing said semiconductor device 有权
    开关电路,半导体器件和制造所述半导体器件的方法

    公开(公告)号:US07821031B2

    公开(公告)日:2010-10-26

    申请号:US11391487

    申请日:2006-03-29

    申请人: Hajime Matsuda

    发明人: Hajime Matsuda

    IPC分类号: H01L29/739

    摘要: A switch circuit includes: a first FET that is connected to one of an input terminal and an output terminal, and performs ON/OFF operation under the control of a gate electrode connected to a control terminal; and a second FET that is connected between the first FET and the other one of the input terminal and the output terminal, and performs ON/OFF operation under the control of a gate electrode connected to the control terminal. The first FET has a higher gate backward breakdown voltage than that of the second FET. Alternatively, the first FET has lower OFF capacitance than that of the second FET.

    摘要翻译: 开关电路包括:第一FET,其连接到输入端子和输出端子之一,并且在连接到控制端子的栅电极的控制下执行ON / OFF操作; 以及第二FET,其连接在第一FET与输入端子和输出端子中的另一个之间,并且在与控制端子连接的栅电极的控制下进行ON / OFF操作。 第一FET具有比第二FET高的栅极反向击穿电压。 或者,第一FET具有比第二FET低的OFF电容。

    High-speed compound semiconductor device having an improved gate structure
    30.
    发明授权
    High-speed compound semiconductor device having an improved gate structure 有权
    具有改进的栅极结构的高速化合物半导体器件

    公开(公告)号:US06329230B1

    公开(公告)日:2001-12-11

    申请号:US09547902

    申请日:2000-04-11

    申请人: Hajime Matsuda

    发明人: Hajime Matsuda

    IPC分类号: H01L21338

    摘要: A semiconductor device includes a gate structure formed on a substrate in which an LDD structure is formed, wherein gate structure includes a Schottky electrode making a Schottky contact with a channel region in the substrate, a low-resistance layer provided above the Schottky electrode, and a stress-relaxation layer interposed between the Schottky electrode and the stress-relaxation layer. The low-resistance layer and said stress-relaxation layer form an overhang structure with respect to the Schottky electrode.

    摘要翻译: 半导体器件包括形成在其中形成LDD结构的衬底上的栅极结构,其中栅极结构包括与衬底中的沟道区肖特基接触的肖特基电极,设置在肖特基电极上方的低电阻层,以及 夹在肖特基电极和应力松弛层之间的应力松弛层。 低电阻层和应力松弛层相对于肖特基电极形成悬垂结构。