公开(公告)号：US20060261335A1

公开(公告)日：2006-11-23

申请号：US11360589

申请日：2006-02-24

申请人： Tadaki Nakahori ,  Yuusuke Uchida ,  Kensuke Nagayama ,  Nobuaki Ishiga

发明人： Tadaki Nakahori ,  Yuusuke Uchida ,  Kensuke Nagayama ,  Nobuaki Ishiga

IPC分类号： H01L29/04

CPC分类号： G02F1/136227 ,  G02F1/133555 ,  G02F1/13439 ,  H01L27/14621

摘要： An object of the present invention is to provide a liquid crystal display device that is capable of preventing anomalous growth of a protective insulating film when the protective insulating film is formed to cover a conductive film that was formed by patterning an amorphous conductive film into given shape with a certain etchant. A liquid crystal display device according to an example of the present invention includes a glass substrate having a thin film transistor formed on its upper surface, a color filter substrate having an opposing electrode formed on its upper surface, and a liquid crystal sandwiched between the glass substrate and the color filter substrate. A pixel electrode is connected to the drain electrode of a thin film transistor. Also, the pixel electrode is covered by a protective insulating film having transparency. The pixel electrode contains an oxide compound containing In and Zn.

摘要翻译： 本发明的目的是提供一种液晶显示装置，其能够防止当形成保护绝缘膜以覆盖通过将非晶导电膜图案化为给定形状而形成的导电膜时的保护绝缘膜的异常生长 有一定的蚀刻剂。 根据本发明的实施例的液晶显示装置包括：玻璃基板，其上表面形成有薄膜晶体管;滤色器基板，其上表面形成有相对的电极;夹在玻璃板之间的液晶 基板和滤色器基板。 像素电极连接到薄膜晶体管的漏电极。 此外，像素电极被具有透明性的保护绝缘膜覆盖。 像素电极含有含有In和Zn的氧化物。

公开(公告)号：US08546804B2

公开(公告)日：2013-10-01

申请号：US13232251

申请日：2011-09-14

申请人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

发明人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  G02F1/136

CPC分类号： H01L29/458 ,  H01L29/42384 ,  H01L29/66765

摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

摘要翻译： 本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。 半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上 插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。 在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

公开(公告)号：US20100078816A1

公开(公告)日：2010-04-01

申请号：US12523550

申请日：2008-02-04

申请人： Takumi Nakahata ,  Kazunori Inoue ,  Koji Oda ,  Naoki Nakagawa ,  Nobuaki Ishiga

发明人： Takumi Nakahata ,  Kazunori Inoue ,  Koji Oda ,  Naoki Nakagawa ,  Nobuaki Ishiga

IPC分类号： H01L23/532 ,  H01L21/283

CPC分类号： G02F1/13439 ,  G02F1/133555 ,  G02F1/136227 ,  G02F2001/136295 ,  G02F2201/40 ,  G02F2202/06 ,  H01L27/124 ,  H01L29/458

摘要： A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.

摘要翻译： 显示装置包括形成在基板上的金属导电层，形成在基板上并与金属导电层接合的透明电极膜和隔离金属导电层和透明导电膜的层间绝缘膜。 金属导电层具有由铝或铝合金制成的较低铝层，由含有杂质的铝或铝合金制成的中间杂质含有层，形成在下铝层的大致整个上表面上，铝层由铝制成 或铝合金，并形成在中间杂质含有层上。 在层间绝缘膜和上部铝层中，接触孔穿过其中并局部暴露中间杂质含有层，并且透明电极膜与从接触孔露出的中间杂质含有层中的金属导电层接合。

公开(公告)号：US20090065942A1

公开(公告)日：2009-03-12

申请号：US12206187

申请日：2008-09-08

申请人： Kazunori INOUE ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata ,  Kazumasa Kawase

发明人： Kazunori INOUE ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata ,  Kazumasa Kawase

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： H01L21/2855 ,  H01L23/53223 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.

摘要翻译： 半导体器件包括以硅为主要成分的膜，以及与以硅为主要成分的膜直接连接的诸如源电极和漏电极的铝合金膜，例如欧姆低电阻 Si膜，并且在接合界面附近至少含有Al，Ni和N。 当直接连接到含硅作为主要成分的膜而不具有由高熔点金属形成的阻挡层时，铝合金膜具有良好的接触特性。

公开(公告)号：US07400365B2

公开(公告)日：2008-07-15

申请号：US10900607

申请日：2004-07-28

申请人： Fumihiro Gotoh ,  Nobuaki Ishiga ,  Toshio Araki ,  Kazunori Inoue ,  Hiroyasu Itoh ,  Eiji Shibata ,  Masanao Nabeshima

发明人： Fumihiro Gotoh ,  Nobuaki Ishiga ,  Toshio Araki ,  Kazunori Inoue ,  Hiroyasu Itoh ,  Eiji Shibata ,  Masanao Nabeshima

IPC分类号： G02F1/136 ,  G02F1/1345

CPC分类号： H01L29/66765 ,  G02F1/1368 ,  G02F2001/136295 ,  H01L27/12 ,  H01L29/4908

摘要： A method for manufacturing thin film transistor array substrate for a liquid crystal display device-includes:—(a) forming a first metal thin film layer on a insulating substrate and forming a gate wiring and a gate electrode by a first photolithography. (b) forming a gate insulating film layer, a semiconductor film layer, an ohmic contact film layer and a second metal thin film layer, and forming the thin film transistor by a second photolithography, (c) forming an interlayer insulating film, and forming a pixel contact hole, a first contact hole and a second contact hole by a third photolithography, and (d) forming a transparent conductive film, and forming a pixel electrode by a fourth photolithography. The first metal thin film has a two-layered structure comprising a first layer made of aluminum or aluminum alloy and a second layer located on said first layer, and the second metal thin film is formed of an alloy mainly containing molybdenum.

摘要翻译： 一种用于制造液晶显示装置的薄膜晶体管阵列基板的方法，包括：（a）在绝缘基板上形成第一金属薄膜层，并通过第一光刻形成栅极布线和栅电极，（b） 形成栅极绝缘膜层，半导体膜层，欧姆接触膜层和第二金属薄膜层，通过第二光刻法形成薄膜晶体管，（c）形成层间绝缘膜，形成像素接触 孔，第一接触孔和第二接触孔，以及（d）形成透明导电膜，并通过第四光刻形成像素电极。 第一金属薄膜具有包括由铝或铝合金制成的第一层和位于所述第一层上的第二层的第二金属薄膜的二层结构，第二金属薄膜由主要含有钼的合金形成。

公开(公告)号：US08558248B2

公开(公告)日：2013-10-15

申请号：US12234371

申请日：2008-09-19

申请人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata

发明人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata

IPC分类号： H01L33/00

CPC分类号： H01L23/53219 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/12438 ,  H01L2924/00

摘要： In accordance with one aspect of the present invention, an Al alloy film contains a first additive element composed of Ni, and at least one type of second additive element selected from the group consisting of Group 2A alkaline earth metals and Groups 3B and 4B metalloids in Period 2 or 3 of the periodic table of the elements. Furthermore, the composition ratio of the first additive element is 0.5-5 at %, and the composition ratio of the second additive element is 0.1-3 at %.

摘要翻译： 根据本发明的一个方面，Al合金膜含有由Ni组成的第一添加元素，以及选自2A族碱土金属和3B族和4B族金属中的至少一种第二添加元素 元素周期表的周期2或3。 此外，第一添加元素的组成比为0.5〜5原子％，第二添加元素的组成比为0.1〜3原子％。

公开(公告)号：US08040054B2

公开(公告)日：2011-10-18

申请号：US12358744

申请日：2009-01-23

申请人： Kensuke Nagayama ,  Kazunori Inoue ,  Nobuaki Ishiga

发明人： Kensuke Nagayama ,  Kazunori Inoue ,  Nobuaki Ishiga

IPC分类号： H05B33/00

CPC分类号： H01L51/105 ,  H01L27/3244 ,  H01L51/5218 ,  H01L2251/308

摘要： An organic electroluminescence type display apparatus according to an aspect of the present invention includes: a thin film transistor formed on an insulating substrate; and an organic EL device connected to the thin film transistor and including at least an anode, an electroluminescence layer, and a cathode stacked on each other in this order. The anode includes: an Al alloy film having conductivity and including at least one kind of Group 8 3d transition metals, and oxygen, the at least one kind of the Group 8 3d transition metals and the oxygen being added to aluminum; and an amorphous ITO film formed on the Al alloy film.

摘要翻译： 根据本发明的一个方面的有机电致发光型显示装置包括：形成在绝缘基板上的薄膜晶体管; 以及连接到薄膜晶体管并且至少包括依次堆叠的阳极，电致发光层和阴极的有机EL器件。 阳极包括：具有导电性且包括至少一种第8族3d过渡金属的Al合金膜和氧，所述至少一种第8族3d过渡金属和氧被添加到铝中; 以及在Al合金膜上形成的非晶ITO膜。

公开(公告)号：US07910053B2

公开(公告)日：2011-03-22

申请号：US11741193

申请日：2007-04-27

申请人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Kazumasa Kawase

发明人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Kazumasa Kawase

IPC分类号： H01L23/48

CPC分类号： H01L29/4908 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/458

摘要： A semiconductor device includes a semiconductor layer, an Al alloy film electrically connected to the semiconductor layer, and a transparent electrode layer directly contacting with the Al alloy film at least over an insulating substrate. The Al alloy film includes one or more kinds of elements selected from Fe, Co and Ni in total of 0.5 to 10 mol %, and a remaining substantially comprises Al.

摘要翻译： 半导体器件包括半导体层，与半导体层电连接的Al合金膜，以及至少在绝缘基板上与Al合金膜直接接触的透明电极层。 Al合金膜包括选自Fe，Co和Ni中的一种或多种元素，总计为0.5至10mol％，其余基本上包含Al。

公开(公告)号：US07816693B2

公开(公告)日：2010-10-19

申请号：US11526768

申请日：2006-09-26

申请人： Kazunori Inoue ,  Harumi Murakami ,  Toshio Araki ,  Nobuaki Ishiga

发明人： Kazunori Inoue ,  Harumi Murakami ,  Toshio Araki ,  Nobuaki Ishiga

IPC分类号： H01L29/18 ,  H01L27/15 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339

CPC分类号： G02F1/1341 ,  G02F1/1345 ,  G02F1/136213 ,  G02F2201/121 ,  H01L27/124 ,  H01L27/1248

摘要： According to an aspect of the present invention, there is provided a display apparatus including a TFT array substrate on which TFTs are formed in an array, a counter substrate disposed so as to face the TFT array substrate, and a sealing pattern for adhering the TFT array substrate and the counter substrate to each other, wherein the counter substrate comprises a counter electrode, and the TFT array substrate comprises a first conductive layer, a first insulating film formed on the first conductive layer, a second conductive layer disposed so as to intersect the first conductive layer via the first insulating film, a second insulating film formed on the second conductive layer and having at least two layers, and common electrode wiring provided below the sealing pattern and electrically connected to the counter electrode by the sealing pattern, and the sealing pattern overlaps the second conductive layer via the second insulating film.

摘要翻译： 根据本发明的一个方面，提供一种显示装置，包括：阵列中形成有TFT的TFT阵列基板;与TFT阵列基板相对配置的对置基板;以及用于将TFT 阵列基板和对置基板彼此相对，其中所述对向基板包括对电极，并且所述TFT阵列基板包括第一导电层，形成在所述第一导电层上的第一绝缘膜，设置成相交的第二导电层 通过第一绝缘膜的第一导电层，形成在第二导电层上并具有至少两层的第二绝缘膜，以及设置在密封图案下方并通过密封图案电连接到对电极的公共电极布线，以及 密封图案经由第二绝缘膜与第二导电层重叠。

公开(公告)号：US07420215B2

公开(公告)日：2008-09-02

申请号：US11767217

申请日：2007-06-22

申请人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Toru Takeguchi ,  Kazumasa Kawase

发明人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Toru Takeguchi ,  Kazumasa Kawase

IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L31/0376 ,  H01L31/20 ,  H01L31/00 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01J29/28 ,  G02F1/13439 ,  G02F1/13458 ,  H01L27/3244 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5234 ,  H01L2227/323

摘要： A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.

摘要翻译： 基本上由In 2 N 3 O 3，SnO 2和ZnO组成的透明导电膜，其具有In /（In + Sn + Zn ）为0.65〜0.8，Sn / Zn的摩尔比为1以下：透明导电膜与由Al或Al合金膜形成的电极或线具有良好的电接触性。 此外，具有由透明导电膜制成的电极或线的半导体器件具有高的可靠性和生产率。