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公开(公告)号：US4902732A
公开(公告)日：1990-02-20
申请号：US928654
申请日：1986-11-05
摘要： The present invention provides a novel epoxy resin-based curable composition suitable for use as an encapsulating resin composition for semiconductor devices capable of being highly resistant against crack formation with low internal stress by curing and yet having very high heat conductivity and maintaining high glass transition temperature. The inventive composition comprises (a) 100 parts by weight of a curable epoxy resin blend which is a mixture of an epoxy resin and a curing agent therefor, (b) from 5 to 100 parts by weight of a block copolymer composed of at least one segment of an aromatic polymeric moiety, phenyl novolac, and at least one segment of an organopolysiloxane moiety having 30 to 200 silicon atoms and bonded to the aromatic polymeric moiety through a carbon-to-silicon linkage, and optionally (c) an inorganic filler which is preferably a silica filler such as powdered quartz in an amount not exceeding 1000 parts by weight.
摘要翻译： 本发明提供一种适用于半导体器件的封装树脂组合物的新型环氧树脂类固化性组合物，能够通过固化而具有低内应力的高裂纹形成，并具有非常高的导热性和保持高的玻璃化转变温度 。 本发明的组合物包含（a）100重量份作为环氧树脂和其固化剂的混合物的可固化环氧树脂共混物，（b）5至100重量份的由至少一种 芳族聚合物部分的段，苯基酚醛清漆和至少一个具有30-200个硅原子的有机聚硅氧烷部分，并通过碳 - 硅键连接到芳族聚合物部分，和任选地（c）无机填料， 优选为不超过1000重量份的二氧化硅填料，例如石英粉末。
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公开(公告)号：US4755554A
公开(公告)日：1988-07-05
申请号：US32648
申请日：1987-03-31
摘要： A silicone rubber composition suitable for hot-air vulcanization under normal pressure without the disadvantages of surface tackiness and internal voids in the cured rubber products and also free from the problems of corrosiveness to metals and toxicity to workers, which comprises, as the curing agent for the organopolysiloxane, a peroxide derivative of dibenzoyl peroxide which is substituted on each of the benzene nuclei with substituted silyl, e.g. trimethyl silyl, group or a silyl-substituted methyl, e.g. trimethylsilyl methyl, group.
摘要翻译： 一种适用于常压下热风硫化的硅橡胶组合物，不存在固化的橡胶制品中的表面粘性和内部空隙的缺点，并且也没有金属腐蚀性和对工作人员毒性的问题，其中包括作为 有机聚硅氧烷，在取代的甲硅烷基的每个苯核上被取代的过氧化二苯甲酰的过氧化物衍生物，例如 三甲基甲硅烷基，基团或甲硅烷基取代的甲基，例如 三甲基甲硅烷基甲基。
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公开(公告)号：US4729941A
公开(公告)日：1988-03-08
申请号：US785518
申请日：1985-10-08
申请人： Kunio Itoh , Kimio Watabe , Masahiro Shiozaki
发明人： Kunio Itoh , Kimio Watabe , Masahiro Shiozaki
摘要： A photoresist processing solution includes a 2-hydroxyethyl-(mono-or polyoxyethyl) trialkyl ammonium hydroxide and is used in a process for development of photoresists having a solubility in aqueous alkaline solution which is a function of exposure to light.
摘要翻译： 光致抗蚀剂处理溶液包括2-羟乙基 - （单 - 或聚氧乙基）三烷基氢氧化铵，并用于显影具有在暴露于光的功能的碱性水溶液中的溶解度的光致抗蚀剂的方法中。
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公开(公告)号：US4716571A
公开(公告)日：1987-12-29
申请号：US886763
申请日：1986-07-16
申请人： Ken Hamada , Masaru Wada , Kunio Itoh
发明人： Ken Hamada , Masaru Wada , Kunio Itoh
IPC分类号： H01L21/308 , H01L21/208 , H01S5/00 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234
摘要： A semiconductor substrate having a groove with a dove-tail-shaped cross section is used as a substrate and thereon, several epitaxial layers including an active layer are formed and a current injection region is formed immediately above the groove; the semiconductor laser attains a high power lasing with the fundamental transverse mode.
摘要翻译： 使用具有鸽尾形截面的凹槽的半导体衬底作为衬底，并且在其上形成包括有源层的几个外延层，并且在凹槽的正上方形成电流注入区域; 半导体激光器实现了具有基本横向模式的高功率激光。
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25.发明授权Method for forming a surface film of cured organosilicon polymer on a substrate surface 失效在基材表面上形成固化的有机硅聚合物的表面膜的方法
公开(公告)号：US4678688A
公开(公告)日：1987-07-07
申请号：US834906
申请日：1986-02-28
申请人： Kunio Itoh , Shohei Kozakai , Yoshinori Hida , Hiroshige Okinoshima , Fumio Okada , Toshio Oba , Hisashi Shimizu , Yuji Hinoto , Hiroshi Yoshioka
发明人： Kunio Itoh , Shohei Kozakai , Yoshinori Hida , Hiroshige Okinoshima , Fumio Okada , Toshio Oba , Hisashi Shimizu , Yuji Hinoto , Hiroshi Yoshioka
IPC分类号： C08G77/54 , C09D183/14 , B05D3/02
CPC分类号： C08J7/047 , C08G77/54 , C09D183/14 , C08J2483/00
摘要： The inventive method for forming a cured film on a substrate surface comprises coating the surface with a room temperature curable organosiloxazane polymer comprising, in a molecule, (a) at least one organosiloxane unit represented by the unit formula (a) at least one organosiloxane unit represented by the unit formulaR.sup.1.sub.a SiO.sub.(4-a)/2,and (b) at least one organosilazane unit represented by the unit formulaR.sup.2.sub.b Si(NR.sup.3).sub.(4-b)/2,in which R.sup.1, R.sup.2 and R.sup.3 are each a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group, not all of them being simultaneously hydrogen atoms, and the subscripts a and b are each a positive integer of 1, 2 or 3 with the proviso that a and b cannot be simultaneously equal to 3, in a molecule and subjecting the coating film to exposure to a moisture-containing atmosphere. The method is useful for forming a surface-protecting film or for imparting surface releasability.
摘要翻译： 用于在基材表面上形成固化膜的本发明方法包括用室温可固化的有机硅氮烷聚合物涂覆表面，所述室温可固化的有机硅氮烷聚合物在分子中包含（a）至少一个由式（a）表示的有机硅氧烷单元，至少一个有机硅氧烷单元 由式R1aSiO（4-a）/ 2表示的至少一种有机硅氮烷单元，（b）由单元式R2bSi（NR3）（4-b）/ 2表示的至少一种有机硅氮烷单元，其中R1，R2和R3各自为 氢原子或取代或未取代的一价烃基，并不全部同时为氢原子，下标a和b各自为正整数1,2或3，条件是a和b不能同时为3 在分子中并使涂膜暴露于含水气氛。 该方法可用于形成表面保护膜或赋予表面剥离性。
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公开(公告)号：US4520485A
公开(公告)日：1985-05-28
申请号：US357086
申请日：1982-03-11
申请人： Takashi Sugino , Kunio Itoh , Masaru Wada , Hirokazu Shimizu
发明人： Takashi Sugino , Kunio Itoh , Masaru Wada , Hirokazu Shimizu
CPC分类号： H01S5/2232 , H01S5/10 , H01S5/1014 , H01S5/1064 , H01S5/2234 , H01S5/2237 , H01S5/50
摘要： On a semiconductor laser substrate, a groove of tapered width is formed, and at least one crystal layer is formed on the substrate. The crystal layer is usable as a waveguide with two light input ends l.sub.1 and l.sub.2 and one light output end l.sub.3 as shown in FIG. 4(C).
摘要翻译： 在半导体激光基板上形成锥形宽度的槽，并且在基板上形成至少一个结晶层。 晶体层可用作具有两个光输入端11和12的波导和一个光输出端13，如图1所示。 4（C）。
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公开(公告)号：US4432092A
公开(公告)日：1984-02-14
申请号：US270351
申请日：1981-06-04
申请人： Iwao Teramoto , Takashi Sugino , Kunio Itoh
发明人： Iwao Teramoto , Takashi Sugino , Kunio Itoh
CPC分类号： H01S5/22 , H01S5/20 , H01S5/2059 , H01S5/2202 , H01S5/2231
摘要： A very narrow current injection region (16") is made by means of terrace-shaping of the surface of the current limiting layer (13) forming a step thereon, the current limiting layer being on the epitaxially grown double hetero structure layers (10, 11 and 12) including the active layer (11). By so terrace-shaping, when Zn as a p-type impurity to form the current injection region (16) is diffused from the surface of the current limiting layer (13), the diffused region is formed to have a deeper part (16") and a shallower part (16'), and the deeper part (16") can be made very narrow by selecting the position of the stripe-shaped diffused region with respect to the step (14).
摘要翻译： 通过对在其上形成台阶的限流层（13）的表面进行露台成形来制造非常窄的电流注入区域（16“），限流层位于外延生长的双异质结构层（10” ，11和12），包括有源层（11）。 通过这样的露台成形，当形成电流注入区域（16）的作为p型杂质的Zn从限流层（13）的表面扩散时，扩散区域形成为具有较深部分（16' '）和较浅部分（16'），并且通过相对于台阶（14）选择条形扩散区域的位置，可以使较深部分（16“）非常窄。
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公开(公告)号：US4383319A
公开(公告)日：1983-05-10
申请号：US183413
申请日：1980-09-02
申请人： Hirokazu Shimizu , Masaru Wada , Takashi Sugino , Kunio Itoh
发明人： Hirokazu Shimizu , Masaru Wada , Takashi Sugino , Kunio Itoh
IPC分类号： H01L21/208 , H01S5/00 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32308 , H01S5/3201
摘要： In a laser comprising a GaAs substrate, an active layer of GaAlAs put between a first and a second clad layers, a buffer layer is disposed between said first clad layer and said substrate, and thermal expansion coefficient of the buffer layer is selected smaller than that of said active layer; thereby an internal stress of the active layer is released and lifetime of the laser is very much prolonged.
摘要翻译： 在包括GaAs衬底的激光器中，GaAlAs的有源层放置在第一和第二覆盖层之间，缓冲层设置在所述第一覆盖层和所述衬底之间，并且缓冲层的热膨胀系数被选择为小于 的所述活性层; 从而释放有源层的内部应力，并且激光器的寿命非常长。
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公开(公告)号：US4358850A
公开(公告)日：1982-11-09
申请号：US185921
申请日：1980-09-10
申请人： Takashi Sugino , Masaru Wada , Hirokazu Shimizu , Kunio Itoh
发明人： Takashi Sugino , Masaru Wada , Hirokazu Shimizu , Kunio Itoh
CPC分类号： H01S5/2238
摘要： In a semiconductor laser comprising a terrace-shaped semiconductor substrate, a first clad layer formed on the semiconductor substrate, an active layer formed on the first clad layer and having two discontinuity places at bending portions of the first clad layer, a second clad layer formed on the active layer, and a current injection electrode above a lasing region in the active layer, the improvement is that a stable fundamental transverse lasing mode and a circular laser beam are obtainable from the lasing region definitely separated by two discontinuity places in the active layer.
摘要翻译： 在包括平台状半导体衬底的半导体激光器中，形成在半导体衬底上的第一覆盖层，形成在第一覆盖层上的有源层，并且在第一覆盖层的弯曲部分处具有两个不连续位置，形成第二覆盖层 在有源层上的激光层和激光层上方的电流注入电极，改进之处在于可以从有源层中的两个不连续位置明确分离的激光区域获得稳定的基本横向激光模式和圆形激光束 。
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