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    Method of dynamic temperature control during microcrystalline SI growth
    21.
    发明授权
    Method of dynamic temperature control during microcrystalline SI growth 失效
    微晶SI生长过程中动态温度控制方法

    公开(公告)号：US07687300B2

    公开(公告)日：2010-03-30

    申请号：US11876130

    申请日：2007-10-22

    申请人： Yong Kee Chae ,  Soo Young Choi

    发明人： Yong Kee Chae ,  Soo Young Choi

    IPC分类号： H01L21/00

    CPC分类号： H01L31/1824 ,  C23C16/24 ,  C23C16/46 ,  Y02E10/545 ,  Y02P70/521

    摘要： The present invention generally comprises a method for dynamically controlling the temperature of a solar cell substrate during microcrystalline silicon deposition. In amorphous silicon/microcrystalline tandem solar cells, microcrystalline silicon may be deposited using a higher power density and to a greater thickness than amorphous silicon. The higher the power density applied, the faster the deposition may occur, but the temperature of the deposition may also increase. At high temperatures, the likelihood of dopant diffusing into the intrinsic layer of the solar cell and damaging the cell is greater. By dynamically controlling the temperature of the susceptor, the substrate and hence, the dopant can be maintained at a substantially constant temperature below the value at which the dopant may diffuse into the intrinsic layer. The dynamic temperature control permits the microcrystalline silicon to be deposited at a high power density without damaging the solar cell.

    摘要翻译： 本发明通常包括在微晶硅沉积期间动态地控制太阳能电池基板的温度的方法。 在非晶硅/微晶串联太阳能电池中，可以使用比非晶硅更高的功率密度和更大的厚度来沉积微晶硅。 施加的功率密度越高，沉积可能发生的越快，但沉积的温度也可能增加。 在高温下，掺杂剂扩散到太阳能电池的本征层并损坏电池的可能性更大。 通过动态地控制基座的温度，衬底和因此掺杂剂可以保持在低于掺杂剂可以扩散到本征层的值的基本上恒定的温度。 动态温度控制允许以高功率密度沉积微晶硅而不损坏太阳能电池。

    METHODS FOR FORMING A DOPED AMORPHOUS SILICON OXIDE LAYER FOR SOLAR CELL DEVICES
    25.
    发明申请
    METHODS FOR FORMING A DOPED AMORPHOUS SILICON OXIDE LAYER FOR SOLAR CELL DEVICES 审中-公开
    用于形成用于太阳能电池装置的掺杂的非晶硅氧化物层的方法

    公开(公告)号：US20130112264A1

    公开(公告)日：2013-05-09

    申请号：US13291288

    申请日：2011-11-08

    申请人： Dapeng Wang ,  Yong Kee Chae

    发明人： Dapeng Wang ,  Yong Kee Chae

    IPC分类号： H01L31/0376 ,  H01L21/20

    CPC分类号： H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/03762 ,  H01L31/076 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

    摘要： Embodiments of the present invention relate to methods for forming a doped amorphous silicon oxide layer utilized in thin film solar cells. In one embodiment, a method for forming a doped p-type amorphous silicon containing layer on a substrate includes providing a substrate in a processing chamber, supplying a gas mixture having a hydrogen-based gas, a silicon-based gas and a carbon and oxygen containing gas into the processing chamber, the gas mixture having a volumetric flow ratio of the hydrogen-based gas to the silicon-based gas between about 5 and about 15, wherein a volumetric flow ratio of the carbon and oxygen containing gas to the total combined flow of hydrogen-based gas and the silicon-based gas is between about 10 percent and about 50 percent; and maintaining a process pressure of the gas mixture within the processing chamber at between about 1 Torr and about 10 Torr while forming a doped p-type amorphous silicon containing layer.

    摘要翻译： 本发明的实施例涉及用于形成薄膜太阳能电池中使用的掺杂的非晶氧化硅层的方法。 在一个实施例中，在衬底上形成掺杂的p型非晶硅层的方法包括在处理室中提供衬底，提供具有氢基气体，硅基气体和碳和氧的气体混合物 所述气体混合物具有约5至约15的所述氢基气体与所述硅基气体的体积流量比，其中所述含碳和含氧气体的体积流量比与所述总体组合 氢基气体和硅基气体的流动在约10％至约50％之间; 以及在处理室内的气体混合物的处理压力保持在约1托和约10托之间，同时形成掺杂的p型非晶硅含硅层。