Abstract:
A photosensitive cell includes an anode and a cathode; a donor-type organic material and an acceptor-type organic material forming a donor-acceptor junction connected between the anode and the cathode; and an exciton blocking layer connected between the acceptor-type organic material of the donor-acceptor junction and the cathode, the blocking layer consisting essentially of a material that has a hole mobility of at least 10−7 cm2NV-sec or higher, where a HOMO of the blocking layer is higher than or equal to a HOMO of the acceptor-type material.
Abstract:
The present invention relates to OLEDs utilizing direct injection to the triplet state. The present invention also relates to OLEDs utilizing resonant injection and/or stepped energy levels.
Abstract:
A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.
Abstract:
An organic semiconductor device is provided. The device has a first electrode and a second electrode, with an organic semiconductor layer disposed between the first and second electrodes. An electrically conductive grid is disposed within the organic semiconductor layer, which has openings in which the organic semiconductor layer is present. At least one insulating layer is disposed adjacent to the electrically conductive grid, preferably such that the electrically conductive grid is completely separated from the organic semiconductor layer by the insulating layer. Methods of fabricating the device, and the electrically conductive grid in particular, are also provided. In one method, openings are formed in an electrically conductive layer with a patterned die, which is then removed. In another method, an electrically conductive layer and a first insulating layer are etched through the mask to expose portions of a first electrode. In yet another method, a patterned die is pressed into a first organic semiconductor layer to create texture in the surface of the first organic semiconductor layer, and then removed. An electrically conductive material is then deposited onto the first organic semiconductor layer from an angle to form a grid having openings as a result of the textured surface and the angular deposition. In each of the methods, insulating layers are preferably deposited or otherwise formed during the process to completely separate the electrically conductive layer from previously and subsequently deposited organic semiconductor layers.
Abstract:
Organic photosensitive optoelectronic devices (“OPODs”) are disclosed which include an exciton blocking layer to enhance device efficiency. Single heterostructure, stacked and wave-guide type embodiments are disclosed. Photodetector OPODs having multilayer structures and an exciton blocking layer are also disclosed. Guidelines for selection of exciton blocking layers are provided.
Abstract:
An organic device is provided, having a first electrode and a second electrode. A first organic layer is disposed between the first electrode and the second electrode. The first organic layer includes a first organic material, with a concentration of at least 50% molar, and a second organic material, with a concentration less than 50% molar. A second organic layer is also disposed between the first electrode and the second electrode. The second organic layer includes the second organic material, with a concentration of at least 50% molar, and the first organic material, with a concentration less than 50% molar. The first organic material may act as an n-dopant in the second organic layer, and the second organic material may act as a p-dopant in the first organic layer. Alternately, the first organic material may act as a p-dopant in the second organic layer, and the second organic material may act as an n-dopant in the first organic layer. Exemplary materials for the first and second organic materials include PTCDA and BTQBT. Devices that may be fabricated include organic light emitting devices, organic transistors, and organic photosensitive devices. Preferably, the electron affinity of the first organic material is within about 0.4 eV of the ionization potential of the second organic material, and more preferably within about 0.2 eV. The first and second organic layers may also be used in separate devices fabricated on the same substrate. A method of fabricating devices is provided, by co-depositing the first and second organic materials at different concentrations in different layers, such that a different material is the host in different layers.
Abstract:
The present invention is directed to multi-layer organic devices having improved stability, wherein at least one layer of the device comprises a host material that is morphologically unstable and a dopant material that provides improved morphological properties to the layer. The layer may be incorporated into, for example, OLEDs, organic phototransistors, organic photovoltaic cells, and organic photodetectors.
Abstract:
Organic photosensitive optoelectronic devices are disclosed. The devises are thin-film crystalline organic optoelectronic devices capable of generating a voltage when exposed to light, and prepared by a method including the steps of: depositing a first organic layer over a first electrode; depositing a second organic layer over the first organic layer; depositing a confining layer over the second organic layer to form a stack; annealing the stack; and finally depositing a second electrode over the second organic layer.
Abstract:
A film clamping mechanism for use in connection with film wrapping apparatus comprises a pair of film clamping fingers or members which are movable between first and second CLOSED and OPENED states for respectively clamping and releasing a leading end portion of a wrapping film, and between first and second RAISED and LOWERED states for respectively clamping the leading end portion of the wrapping film at the commencement of the film wrapping operation and for maintaining the leading end portion of the wrapping film during the film wrapping operation. In this manner, since the clamping fingers are disposed at their LOWERED state during the film wrapping operation, such clamping fingers or members do not pose any interference with the carriage assembly upon which the supply of wrapping film is disposed whereby the carriage assembly can be disposed at its lower-most position in order to securely wrap loads having relatively small height dimensions as well as to shorten the film wrapping operation as well as to reduce the amount of wrapping film required for a particular film wrapping operation.
Abstract:
A device includes a three-dimensionally curved substrate, a patterned metal layer disposed on the curved substrate, and an array of optoelectronic devices, each optoelectronic device including an optoelectronic structure supported by the curved substrate. Each optoelectronic structure includes an inorganic semiconductor stack. The device further includes a set of contact stripes extending across the curved substrate, each optoelectronic structure being coupled to a respective contact stripe of the set of contact stripes. The array of optoelectronic devices is secured to the curved substrate via a bond between the patterned metal layer and the set of contact stripes.