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29 条记录 (耗时 0.026 秒)

    Electro-optical device with inverted transparent substrate and method for making same
    22.
    发明授权
    Electro-optical device with inverted transparent substrate and method for making same 失效
    带反转透明基板的电光装置及其制造方法

    公开(公告)号：US5115286A

    公开(公告)日：1992-05-19

    申请号：US663056

    申请日：1991-02-27

    申请人： Michael D. Camras ,  Louis W. Cook ,  Virginia M. Robbins

    发明人： Michael D. Camras ,  Louis W. Cook ,  Virginia M. Robbins

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0025 ,  H01L33/0062

    摘要： An electro-optical device with a transparent substrate is produced by epitaxially first growing the active device layers, followed by growth of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The active device layers have dopants with sufficiently low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. When a epitaxial layer is oxidizable, a non-oxidizable cap is temporarily grown on it in between growths and during the temperature heat up periods. The cap is subsequently removed by melting back at an elevated temperature just prior to the growth of a next layer. The technique may also be used for growing a transparent substrate which is lattice mismatched with the active deivce layers.

    摘要翻译： 通过外延地生长有源器件层，然后在不透明晶片上生长透明衬底层，制造具有透明衬底的电光器件。 随后去除不透明晶片。 有源器件层具有足够低的扩散性的掺杂剂，使得它们的电子特性在透明衬底层的生长过程中长时间暴露于高温下不会受到不利影响。 在液相外延（LPE）方法中，使用重复的温度循环技术，其中每次冷却后温度重复升高，以提供用于生长足够厚的基底层或一系列器件层的大的冷却范围。 在生长和温度升温期之间，装置储存在LPE反应器内。 当外延层可氧化时，在生长之间和在升温期间暂时在其上生长不可氧化的盖。 随后在下一层生长之前在升高的温度下将盖除去。 该技术还可用于生长与活性活性层晶格失配的透明衬底。

    Electro-optical device with inverted transparent substrate and method for making same
    24.
    发明授权
    Electro-optical device with inverted transparent substrate and method for making same 失效
    带反转透明基板的电光装置及其制造方法

    公开(公告)号：US4912532A

    公开(公告)日：1990-03-27

    申请号：US237797

    申请日：1988-08-26

    申请人： Louis W. Cook ,  Michael D. Camras

    发明人： Louis W. Cook ,  Michael D. Camras

    IPC分类号： H01L21/208 ,  H01L33/00

    CPC分类号： H01L33/0025 ,  H01L33/0062

    摘要： An electro-optical device with a transparent substrate is produced by epitaxially first growing the device layers, followed by that of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The device layers have dopants with sufficient low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised up each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. In other embodimens, the device is either temporarily removed from the LPE reactor or is transferred to another reactor. When a epitaxial layer is oxidizable, a non-oxidizable cap is temporarily grown on it in between growths and during the temperature heat-up periods. The cap is subsequently removed by melting back at an elevated temperature just prior to the growth of a next layer.

    Epitaxial growth method
    25.
    发明授权
    Epitaxial growth method 失效
    外延生长法

    公开(公告)号：US5185288A

    公开(公告)日：1993-02-09

    申请号：US464275

    申请日：1990-01-12

    申请人： Louis W. Cook ,  Michael D. Camras

    发明人： Louis W. Cook ,  Michael D. Camras

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0025 ,  H01L33/0062 ,  Y10S148/101 ,  Y10S438/902

    摘要： An electro-optical device with a transparent substrate is produced by epitaxially first growing the device layers, followed by that of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The device layers have dopants with sufficient low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised up each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. In other embodiments, the device is either temporarily removed from the LPE reactor or is transferred to another reactor. When a epitaxial layer is oxidizable, a non-oxidizable cap is temporarily grown on it in between growths and during the temperature heat-up periods. The cap is subsequently removed by melting back at an elevated temperature just prior to the growth of a next layer.

    摘要翻译： 通过外延地第一次生长器件层，然后在不透明晶片上的透明衬底层的电极上制造具有透明衬底的电光器件。 随后去除不透明晶片。 器件层具有足够低的扩散性的掺杂剂，使得它们的电子特性在透明衬底层的生长过程中长时间暴露于升高的温度下不受不利影响。 在液相外延（LPE）方法中，使用重复的温度循环技术，其中每次冷却后温度重复升高，以提供用于生长足够厚的基底层或一系列器件层的大的冷却范围。 在生长和温度升温期之间，装置储存在LPE反应器内。 在其它实施方案中，将该装置暂时从LPE反应器中移出或转移至另一个反应器。 当外延层可氧化时，在生长之间和温度加热期间暂时在其上生长不可氧化的盖。 随后在下一层生长之前在升高的温度下将盖除去。

    Forming an optical element on the surface of a light emitting device for improved light extraction
    28.
    发明授权
    Forming an optical element on the surface of a light emitting device for improved light extraction 有权

    公开(公告)号：US06987613B2

    公开(公告)日：2006-01-17

    申请号：US09823841

    申请日：2001-03-30

    申请人： Douglas W. Pocius ,  Michael D. Camras ,  Gloria E. Hofler

    发明人： Douglas W. Pocius ,  Michael D. Camras ,  Gloria E. Hofler

    IPC分类号： G02B27/44

    CPC分类号： H01L33/20 ,  G02B5/32 ,  H01L33/44

    摘要： Provided is a light emitting device including a Fresnel lens and/or a holographic diffuser formed on a surface of a semiconductor light emitter for improved light extraction, and a method for forming such light emitting device. Also provided is a light emitting device including an optical element stamped on a surface for improved light extraction and the stamping method used to form such device. An optical element formed on the surface of a semiconductor light emitter reduces reflective loss and loss due to total internal reflection, thereby improving light extraction efficiency. A Fresnel lens or a holographic diffuser may be formed on a surface by wet chemical etching or dry etching techniques, such as plasma etching, reactive ion etching, and chemically-assisted ion beam etching, optionally in conjunction with a lithographic technique. In addition, a Fresnel lens or a holographic diffuser may be milled, scribed, or ablated into the surface. Stamping, an alternative method for forming an optical element, can also be used to form a Fresnel lens or a holographic diffuser on the surface of a semiconductor light emitter. Stamping includes pressing a stamping block against the surface of a light emitting diode. The stamping block has a shape and pattern that are the inverse of the desired optical element. Optionally, stamping can be done before, after, or concurrently with wafer-bonding. Alternatively, a material can be stamped and later bonded to the semiconductor light emitter.

    Increasing the brightness of III-nitride light emitting devices
    29.
    发明授权
    Increasing the brightness of III-nitride light emitting devices 有权

    公开(公告)号：US06576932B2

    公开(公告)日：2003-06-10

    申请号：US09797770

    申请日：2001-03-01

    申请人： Reena Khare ,  Werner K. Goetz ,  Michael D. Camras

    发明人： Reena Khare ,  Werner K. Goetz ,  Michael D. Camras

    IPC分类号： H01L3300

    CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/02433 ,  H01L21/02458 ,  H01L33/007 ,  H01L33/16

    摘要： LEDs employing a III-Nitride light emitting active region deposited on a base layer above a substrate show improved optical properties with the base layer grown on an intentionally misaligned substrate with a thickness greater than 3.5 &mgr;m. Improved brightness, improved quantum efficiency, and a reduction in the current at which maximum quantum efficiency occurs are among the improved optical properties resulting from use of a misaligned substrate and a thick base layer. Illustrative examples are given of misalignment angles in the range from 0.05° to 0.50°, and base layers in the range from 6.5 to 9.5 &mgr;m although larger values of both misalignment angle and base layer thickness can be used. In some cases, the use of thicker base layers provides sufficient structural support to allow the substrate to be removed from the device entirely.