公开(公告)号：US20190013293A1

公开(公告)日：2019-01-10

申请号：US16037537

申请日：2018-07-17

Applicant: TDK CORPORATION

Inventor： Makoto ORIKASA ,  Hideyuki SEIKE ,  Yuhei HORIKAWA ,  Hisayuki ABE

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/95 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05655 ,  H01L2224/11005 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/1181 ,  H01L2224/1184 ,  H01L2224/11849 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16148 ,  H01L2224/81002 ,  H01L2224/81014 ,  H01L2224/81022 ,  H01L2224/81035 ,  H01L2224/81047 ,  H01L2224/81048 ,  H01L2224/81065 ,  H01L2224/81143 ,  H01L2224/81815 ,  H01L2224/95146 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/00012 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/01029 ,  H01L2924/01083

Abstract: A method for producing a semiconductor chip is a method for producing a semiconductor chip that includes a substrate, a conductive portion formed on the substrate, and a microbump formed on the conductive portion, which includes a smooth surface formation process of forming a smooth surface on the microbump, and the smooth surface formation process includes a heating process of causing a reducing gas to flow in an inert atmosphere into a space where the semiconductor chips are arranged and heated at or higher than a temperature of a melting point of the microbump, and in the heating process, a pressure application member is mounted on the microbump and among principal surfaces of the pressure application member, a principal surface that contacts the microbump is a flat surface.

公开(公告)号：US20180254255A1

公开(公告)日：2018-09-06

申请号：US15449361

申请日：2017-03-03

Applicant: TDK CORPORATION

Inventor： Makoto ORIKASA ,  Hideyuki SEIKE ,  Yuhei HORIKAWA ,  Hisayuki ABE

IPC: H01L23/00 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05655 ,  H01L2224/11005 ,  H01L2224/11334 ,  H01L2224/1146 ,  H01L2224/1181 ,  H01L2224/1184 ,  H01L2224/11849 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13083 ,  H01L2224/16148 ,  H01L2224/81014 ,  H01L2224/81035 ,  H01L2224/81047 ,  H01L2224/81048 ,  H01L2224/81065 ,  H01L2224/81143 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/00012

Abstract: A method for producing a semiconductor package is a method for producing a semiconductor package in which a plurality of semiconductor chips, each of which includes a substrate, conductive portions formed on the substrate, and microbumps formed on the conductive portions, are laminated, which includes a heating process of causing a reducing gas to flow in an inert atmosphere into a space where the semiconductor chips are arranged and heated at or higher than a temperature of a melting point of the microbump, and in the heating process, a pressure application member is mounted on the microbump.

公开(公告)号：US20160275976A1

公开(公告)日：2016-09-22

申请号：US15071989

申请日：2016-03-16

Applicant: TDK CORPORATION

Inventor： Katsuhiko IGARASHI ,  Makoto ORIKASA ,  Takashi KAWASHIMA ,  Hisayuki ABE

IPC: G11B5/48 ,  G11B5/60

CPC classification number: G11B5/4833 ,  G11B5/4826

Abstract: A magnetic head device with high joint strength in an arm and a suspension is provided. The magnetic head device comprises an arm, a suspension overlapping with a leading end part of the arm, a slider located at a leading end part of the suspension, and a joint part that is located between the leading end part of the arm and the suspension and that joins the arm and the suspension, while the joint part includes Sn.

Abstract translation: 提供了一种在臂和悬架上具有高接合强度的磁头装置。 磁头装置包括臂，与臂的前端部重叠的悬架，位于悬架的前端部的滑块和位于臂的前端部与悬架之间的接合部 并且连接臂和悬架，而接头部分包括Sn。

公开(公告)号：US20160275975A1

公开(公告)日：2016-09-22

申请号：US15071881

申请日：2016-03-16

Applicant: TDK CORPORATION

Inventor： Takashi KAWASHIMA ,  Toru MIZUNO ,  Katsuhiko IGARASHI ,  Makoto ORIKASA ,  Hidetoshi SUZUKI

IPC: G11B5/48 ,  G11B5/60

CPC classification number: G11B5/4833 ,  G11B5/4813 ,  G11B5/4826 ,  G11B5/6005

Abstract: A magnetic head device which has strong joint strength in an arm and a suspension and high accuracy of a size and a shape is provided. The magnetic head device comprises an arm, a suspension overlapping with a leading end part of the arm, a slider located at a leading end part of the suspension, and a first joint part that is placed between the leading end part of the arm and the suspension and that joins the arm and the suspension, the first joint part including Sn or a resin adhesive.

Abstract translation: 提供了一种在臂上具有强的接合强度和悬挂性并且具有高精度的尺寸和形状的磁头装置。 磁头装置包括臂，与臂的前端部重叠的悬架，位于悬架的前端部的滑块，以及设置在臂的前端部和第二接头部之间的第一接合部， 悬挂，并且连接臂和悬架，第一接头部分包括Sn或树脂粘合剂。

公开(公告)号：US20140054769A1

公开(公告)日：2014-02-27

申请号：US13960291

申请日：2013-08-06

Applicant: TDK CORPORATION

Inventor： Kenichi YOSHIDA ,  Makoto ORIKASA ,  Hideyuki SEIKE ,  Yuhei HORIKAWA ,  Hisayuki ABE

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05571 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13017 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A preferred terminal structure comprises a base material; an electrode formed on the base material; an insulating covering layer formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under bump metal layer containing Ni, filling the opening on the electrode; and a dome-shaped bump containing Sn and Ti, covering the under bump metal layer, wherein at least part of the under bump metal layer has a portion sandwiched between the external electrode and the insulating covering layer.

Abstract translation: 优选的端子结构包括基材; 形成在基材上的电极; 绝缘覆盖层，形成在所述基底材料上和所述电极上，并且具有暴露所述电极的至少一部分的开口; 含有Ni的下凸块金属层，填充电极上的开口; 以及包含Sn和Ti的圆顶状凸起，覆盖下凸块状金属层，其中至少部分下凸块金属层具有夹在外部电极和绝缘覆盖层之间的部分。

公开(公告)号：US20130192873A1

公开(公告)日：2013-08-01

申请号：US13678107

申请日：2012-11-15

Applicant: TDK CORPORATION

Inventor： Makoto ORIKASA ,  Hideyuki SEIKE ,  Noboru ITO ,  Kenichi YOSHIDA ,  Yuhei HORIKAWA

IPC: H01B1/00

CPC classification number: H01B1/00 ,  H01B1/026

Abstract: This structure body includes a conductor comprising Cu as a main component, an intermediate layer formed on the conductor, and a protective layer formed on the intermediate layer, the intermediate layer includes at least Cu, Sn, Ni, and P, and the protective layer includes at least Ni and P.

Abstract translation: 该结构体包括以Cu为主要成分的导体，形成在导体上的中间层和形成在中间层上的保护层，中间层至少包括Cu，Sn，Ni和P，保护层 至少包括Ni和P.