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    INTEGRATED DEVICE AND NEUROMORPHIC DEVICE
    21.
    发明申请
    INTEGRATED DEVICE AND NEUROMORPHIC DEVICE 有权

    公开(公告)号：US20220005866A1

    公开(公告)日：2022-01-06

    申请号：US17207236

    申请日：2021-03-19

    Applicant: TDK CORPORATION

    Inventor： Shogo YAMADA ,  Tatsuo SHIBATA ,  Tomoyuki SASAKI

    IPC: H01L27/22 ,  G06N3/063 ,  G06N3/08 ,  H01L43/02 ,  H01L43/08

    Abstract: An integrated device includes: a substrate; and a laminated structural body. The substrate has a plurality of switching elements. The laminated structural body has a plurality of magnetic elements having a first element group disposed in a first hierarchical layer and a second element group disposed in a second hierarchical layer. Each of the plurality of magnetic elements includes a conductive layer and a laminated body including a ferromagnetic layer. The plurality of switching elements include a plurality of first switching elements connected to first ends of the conductive layers and a plurality of second switching elements connected to second ends of the conductive layers. A first switching element connected to a second magnetic element belonging to a second element group which is present between a first switching element and a second switching element connected to a first magnetic element belonging to a first element group.

    MAGNETIC DOMAIN WALL MOVEMENT ELEMENT AND MAGNETIC RECORDING ARRAY
    22.
    发明申请
    MAGNETIC DOMAIN WALL MOVEMENT ELEMENT AND MAGNETIC RECORDING ARRAY 有权

    公开(公告)号：US20210098690A1

    公开(公告)日：2021-04-01

    申请号：US17039244

    申请日：2020-09-30

    Applicant: TDK CORPORATION

    Inventor： Takuya ASHIDA ,  Tatsuo SHIBATA

    IPC: H01L43/02 ,  G11C11/16 ,  H01L27/22

    Abstract: A magnetic domain wall movement element includes a wiring layer containing a ferromagnetic material, a non-magnetic layer in contact with the first surface of the wiring layer, a first conductive layer connected to the first surface of the wiring layer and containing a ferromagnetic material; and a second conductive layer connected to the wiring layer at a distance from the first conductive layer. A first part of the connection face of the first conductive layer is directly connected to the wiring layer, and a second part of the connection face other than the first part is connected to the wiring layer via the non-magnetic layer.

    PRODUCT-SUM OPERATION DEVICE, NEUROMORPHIC DEVICE, AND METHOD FOR USING PRODUCT-SUM OPERATION DEVICE
    23.
    发明申请
    PRODUCT-SUM OPERATION DEVICE, NEUROMORPHIC DEVICE, AND METHOD FOR USING PRODUCT-SUM OPERATION DEVICE 审中-公开

    公开(公告)号：US20200334017A1

    公开(公告)日：2020-10-22

    申请号：US16957359

    申请日：2018-12-12

    Applicant: TDK CORPORATION

    Inventor： Tatsuo SHIBATA

    IPC: G06F7/544 ,  G06N3/063

    Abstract: A product-sum operation device, a neuromorphic device, and a method for using the product-sum operation device are provided which can, when applied to a neural network, curb the possibility that the performance of the neural network may be greatly impaired. The product-sum operation device includes a product operator and a sum operator. The product operator includes a plurality of product operation elements, each of which is a resistance change element. The sum operator includes an output detector that detects the sum of outputs from the plurality of product operation elements and the resistance change element includes a fuse portion which is disconnected when a malfunction which increases an output current from the resistance change element has occurred in the resistance change element.

    RESERVOIR ELEMENT AND NEUROMORPHIC ELEMENT
    24.
    发明申请
    RESERVOIR ELEMENT AND NEUROMORPHIC ELEMENT 审中-公开

    公开(公告)号：US20200083434A1

    公开(公告)日：2020-03-12

    申请号：US16566003

    申请日：2019-09-10

    Applicant: TDK CORPORATION

    Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA

    IPC: H01L43/02 ,  H01L43/10 ,  G06N3/063 ,  G06N3/08

    Abstract: A reservoir element of the first aspect of the present disclosure includes: a first ferromagnetic layer; a plurality of second ferromagnetic layers positioned in a first direction with respect to the first ferromagnetic layer and spaced apart from each other in a plan view from the first direction; and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layers.

    MAGNETIC DOMAIN WALL DISPLACEMENT TYPE MAGNETIC RECORDING ELEMENT AND MAGNETIC RECORDING ARRAY
    25.
    发明申请
    MAGNETIC DOMAIN WALL DISPLACEMENT TYPE MAGNETIC RECORDING ELEMENT AND MAGNETIC RECORDING ARRAY 审中-公开

    公开(公告)号：US20200044141A1

    公开(公告)日：2020-02-06

    申请号：US16191893

    申请日：2018-11-15

    Applicant: TDK CORPORATION

    Inventor： Shogo YAMADA ,  Tomoyuki SASAKI ,  Yukio TERASAKI ,  Tatsuo SHIBATA

    IPC: H01L43/02 ,  H01L27/22

    Abstract: A magnetic domain wall displacement type magnetic recording element which comprises: a first magnetization fixed part which is stacked in a first direction, a magnetic recording layer which includes a magnetic domain wall and extends in a second direction which crosses with the first direction, a non-magnetic layer which is provided between the first magnetization fixed part and the magnetic recording layer, and a first via part which is electrically connected to the magnetic recording layer, wherein at least a part of the first via part is located at a position which is apart from the first magnetization fixed part in the second direction in planar view observed from the first direction, the magnetic recording layer includes a first part which has a position where the first magnetization fixed part overlaps with the magnetic recording layer in planar view observed from the first direction, and a width of the first via part in a third direction which is orthogonal to the second direction is larger than a width of said position of the first part of the magnetic recording layer.

    SPIN-CURRENT MAGNETIZATION ROTATIONAL ELEMENT AND ELEMENT ASSEMBLY
    27.
    发明申请
    SPIN-CURRENT MAGNETIZATION ROTATIONAL ELEMENT AND ELEMENT ASSEMBLY 审中-公开

    公开(公告)号：US20190058111A1

    公开(公告)日：2019-02-21

    申请号：US16079800

    申请日：2017-07-25

    Applicant: TDK CORPORATION

    Inventor： Tatsuo SHIBATA ,  Tomoyuki SASAKI ,  Tohru OIKAWA

    IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22

    Abstract: A spin-current magnetization rotational element includes: a ferromagnetic metal layer; and a spin-orbit torque wiring that extends in a first direction intersecting a stacking direction of the ferromagnetic metal layer and is bonded to the ferromagnetic metal layer. A direction of a spin injected into the ferromagnetic metal layer from the spin-orbit torque wiring intersects a magnetization direction of the ferromagnetic metal layer. The ferromagnetic metal layer has shape anisotropy and has a demagnetizing field distribution caused by the shape anisotropy. The demagnetizing field distribution generates an easy magnetization rotational direction in which the magnetization of the ferromagnetic metal layer is most easily reversed. The easy magnetization rotational direction intersects the first direction in a plan view seen from the stacking direction.

    SPIN CURRENT MAGNETIZATION REVERSAL ELEMENT, ELEMENT ASSEMBLY, AND METHOD FOR PRODUCING SPIN CURRENT MAGNETIZATION REVERSAL ELEMENT
    29.
    发明申请
    SPIN CURRENT MAGNETIZATION REVERSAL ELEMENT, ELEMENT ASSEMBLY, AND METHOD FOR PRODUCING SPIN CURRENT MAGNETIZATION REVERSAL ELEMENT 审中-公开

    公开(公告)号：US20180033953A1

    公开(公告)日：2018-02-01

    申请号：US15642003

    申请日：2017-07-05

    Applicant: TDK CORPORATION

    Inventor： Tomoyuki SASAKI ,  Tatsuo SHIBATA ,  Tohru OIKAWA

    IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10

    CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: This spin current magnetization reversal element includes a magnetoresistance effect element having a first ferromagnetic metal layer having a fixed magnetization direction, a second ferromagnetic metal layer having a variable magnetization direction, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a first direction that intersects the stacking direction of the magnetoresistance effect element, and contacts the surface of the magnetoresistance effect element on the side facing the second ferromagnetic metal layer, wherein at least one surface of the second ferromagnetic metal layer in the stacking direction has an inclined surface that is inclined in the first direction, and the direction of magnetization of the second ferromagnetic metal layer is inclined due to the inclined surface.

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