MAGNETORESISTIVE EFFECT DEVICE
    21.
    发明申请

    公开(公告)号:US20180309046A1

    公开(公告)日:2018-10-25

    申请号:US15764826

    申请日:2016-06-02

    Abstract: Magnetoresistive effect device including magnetoresistive effect element which high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including magnetization fixed, spacer, and magnetization free layer wherein magnetization direction is changeable; first and second ports; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. Closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed. Magnetoresistive effect element is arranged wherein direct current input from direct-current input terminal flows through magnetoresistive effect element in direction from magnetization fixed layer to magnetization free layer.

    MAGNETIC ELEMENT
    22.
    发明申请
    MAGNETIC ELEMENT 有权
    磁性元件

    公开(公告)号:US20150228394A1

    公开(公告)日:2015-08-13

    申请号:US14613852

    申请日:2015-02-04

    Abstract: A magnetic element including a magnetoresistive effect film (MEF). Magnetic element includes an MEF and nonmagnetic spacer layer, first and second ferromagnetic layers, wherein layers being disposed with nonmagnetic spacer layer interposed therebetween, pair of electrodes disposed with MEF interposed therebetween in stacking direction of MEF at least two first soft magnetic layers, coil, and second soft magnetic layer magnetically connected to coil, wherein second soft magnetic layer has ring-like shape, spacing distance between second soft magnetic layer and MEF is larger than first soft magnetic layer and MEF, film thickness of second soft magnetic layer is larger than first soft magnetic layer, part of the two first soft magnetic layers overlaps a part of second soft magnetic layer in stacking direction of MEF, first and second soft magnetic layers are magnetically coupled to each other, and MEF is disposed between respective fore ends of two first soft magnetic layers.

    Abstract translation: 包括磁阻效应膜(MEF)的磁性元件。 磁性元件包括MEF和非磁性间隔层,第一和第二铁磁层,其中设置有介于其间的非磁性间隔层的层间设置有MEF的一对电极,MEF的堆叠方向在MEF的堆叠方向上至少两个第一软磁性层,线圈, 和第二软磁层磁性地连接到线圈,其中第二软磁层具有环形形状,第二软磁层与MEF之间的间隔距离大于第一软磁层和MEF,第二软磁层的膜厚度大于 第一软磁层,两个第一软磁层的一部分在MEF的堆叠方向上与第二软磁层的一部分重叠,第一和第二软磁层彼此磁耦合,并且MEF设置在两个的相应前端之间 第一软磁层。

    OPTICAL DEVICE AND OPTICAL SYSTEM
    25.
    发明公开

    公开(公告)号:US20230301196A1

    公开(公告)日:2023-09-21

    申请号:US18108046

    申请日:2023-02-10

    CPC classification number: H10N50/10 H10N50/85

    Abstract: This optical device includes a light-emitting unit that is configured to emit a light; a first magnetic element; and a circuit, wherein the first magnetic element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a reflected light reflected by an object to be irradiated with the light is applied to the first magnetic element, a first signal corresponding to an emission of the light from the light-emitting unit is input to the circuit, and a second signal corresponding to an application of the reflected light to the first magnetic element is input from the first magnetic element to the circuit.

    PHOTODETECTION ELEMENT AND RECEIVER

    公开(公告)号:US20220068537A1

    公开(公告)日:2022-03-03

    申请号:US17508570

    申请日:2021-10-22

    Abstract: A photodetection element includes: a first ferromagnetic layer configured to be irradiated with light; a second ferromagnetic layer; and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer includes a first region in contact with the spacer layer and a second region disposed in a position farther from the space layer than the first region, the first region is made of CoFeB alloy, and the second region is a magnetic material containing Fe and Gd as major constituent elements.

    PATCH ANTENNA
    28.
    发明申请
    PATCH ANTENNA 审中-公开

    公开(公告)号:US20190165475A1

    公开(公告)日:2019-05-30

    申请号:US16202086

    申请日:2018-11-28

    Inventor: Tetsuya SHIBATA

    Abstract: Disclosed herein is a patch antenna that includes a first dielectric layer in which a patch conductor is provided, a second dielectric layer in which a signal line extending in a direction parallel to the patch conductor is provided, a feed conductor provided perpendicularly to the patch conductor so as to connect one end of the signal line and a feed point for the patch conductor, a first ground pattern provided between the patch conductor and the signal line, and a second ground pattern provided on an opposite side to the first ground pattern with respect to the signal line. The first dielectric layer has a dielectric constant lower than that of the second dielectric layer.

    MAGNETORESISTIVE EFFECT DEVICE
    30.
    发明申请

    公开(公告)号:US20180040666A1

    公开(公告)日:2018-02-08

    申请号:US15662697

    申请日:2017-07-28

    Abstract: A magnetoresistive effect device includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port, a second port, a signal line, and a direct-current input terminal. The first port, the first magnetoresistive effect element, and the second port are connected in series to each other in this order via the signal line. The second magnetoresistive effect element is connected to the signal line in parallel with the second port. The first magnetoresistive effect element and the second magnetoresistive effect element are formed so that the relationship between the direction of direct current that is input from the direct-current input terminal and that flows through the first magnetoresistive effect element and the order of arrangement of a magnetization fixed layer, a spacer layer, and a magnetization free layer in the first magnetoresistive effect element is opposite to the above relationship in the second magnetoresistive effect element.

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