Abstract:
A short circuit detection circuit includes a current terminal, a sense resistor, an amplifier, and a resistor-capacitor ladder. The sense resistor is coupled to the current terminal, and is configured to develop a sense voltage proportional to a current through the current terminal. The amplifier is coupled to the sense resistor, and is configured to generate a scaled current proportional to the sense voltage. The resistor-capacitor ladder is coupled to the amplifier, and is configured to generate a measurement voltage that represents a surface temperature rise due to the current through the current terminal.
Abstract:
Methods, apparatus, systems and articles of manufacture to trim temperature sensors are disclosed. An example method includes: sampling a first value indicative of a temperature of a first die of a multi-chip module (MCM) with a first temperature sensor, the first die including a first transistor having a channel including a first material; and calibrating a second temperature sensor configured to sample a second value indicative of a temperature of a second die including a second transistor have a second channel including a second material, the calibrating based on the first value.
Abstract:
Methods, systems, and apparatus to facilitate a fault triggered diode emulation mode of a transistor. An example apparatus includes a driver to output a control signal to a gate terminal of a transistor of a power converter; and a diode emulation control circuit to, in response to determining a fault corresponding to the transistor, enable the transistor when current flows in a direction from a source terminal of the transistor to a drain terminal of the transistor.
Abstract:
A first branch group circuit includes a first branch circuit receiving a first RF input signal and first control information; and a second branch circuit receiving the first input signal and second control information. Each of the first and second branch circuits includes a power amplifier. The second control information enables the second branch circuit to be switched on or off while the first branch circuit remains on. A second branch group circuit includes: a third branch circuit receiving a second RF input signal and third control information; and a fourth branch circuit receiving the second input signal and fourth control information. Each of the third and fourth branch circuits includes a power amplifier. The fourth control information enables the fourth branch circuit to be switched on or off while the third branch circuit remains on. A combiner combines output signals of the power amplifiers to produce an output signal.
Abstract:
A level shifter includes a signal generator that generates differential signals on a first output and a second output. A first capacitor is coupled between the first output and a first node and a second capacitor is coupled between the second output and a second node. A third capacitor is coupled between the first node and a first voltage potential, wherein the capacitance of the third capacitor is variable. A fourth capacitor is coupled between the second node and the first voltage potential, wherein the capacitance of the fourth capacitor is variable.
Abstract:
An outphasing amplifier includes a first class-E power amplifier (16-1) having an output coupled to a first conductor (31-1) and an input receiving a first RF drive signal (S1(t)). A first reactive element (CA-1) is coupled between the first conductor and a second conductor (30-1). A second reactive element (LA-1) is coupled between the second conductor and a third conductor (32-1). A second class-E power amplifier (17-1) includes an output coupled to a fourth conductor (31-2) and an input coupled to a second RF drive signal (S2(t)), a third reactive element (CA-3) coupled between the second and fourth conductors. Outputs of the first and second power amplifiers are combined by the first, second and third reactive elements to produce an output current in a load (R). An efficiency enhancement circuit (LEEC-1) is coupled between the first and fourth conductors to improve power efficiency at back-off power levels. Power enhancement circuits (20-1,2) are coupled to the first and fourth conductors, respectively.